N-Channel Power MOSFET 600V, 0.5A, 10Ω

Transcription

1 N-Channel Power MOSFET 6V,.5A, Ω FEATURES % Avalanche Tested Pb-free plating Compliant to RoHS Directive 2/65/EU and in accordance to WEE 22/96/EC Halogen-free according to IEC KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 6 V R DS(on) (max) Ω Q g 6. nc APPLICATIONS Power Supply AC/DC LED Lighting TO-92 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 6 V Gate-Source Voltage V GS ±3 V Continuous Drain Current (Note ) T C = 25 C I D.5 T C = C.25 Pulsed Drain Current (Note 2) I DM 2 A Single Pulse Avalanche Energy (Note 3) E AS 5 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Total Power T C = 25 C P DTOT 2.5 W Operating Junction Temperature T J 5 ºC Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C A THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Lead Thermal Resistance R ӨJL 5 C/W Junction to Ambient Thermal Resistance R ӨJA C/W Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. R ӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. Version: C67

2 ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 5) Static Drain-Source Breakdown Voltage V GS = V, I D = 25uA BV DSS V Gate Threshold Voltage V DS = V GS, I D = 25µA V GS(TH) V Gate Body Leakage V GS = ±3V, V DS = V I GSS ± na Zero Gate Voltage Drain Current V DS = 6V, V GS = V I DSS µa Drain-Source On-State Resistance V GS = V, I D =.25A R DS(ON) -- 8 Ω Forward Transfer Conductance V DS = V, I D =.5A g fs S (Note 6) Dynamic Total Gate Charge Q g V DS = 48V, I D =.5A, Gate-Source Charge Q gs V GS = V Gate-Drain Charge Q gd Input Capacitance C iss V DS = 25V, V GS = V, Output Capacitance C oss F =.MHz Reverse Transfer Capacitance C rss (Note 7) Switching Turn-On Delay Time t d(on) Turn-On Rise Time V GS = V, I D =.5A, t r Turn-Off Delay Time V DD = 3V, R G =25Ω t d(off) Turn-Off Fall Time t f (Note 5) Source-Drain Diode Source Current Integral reverse diode nc I S A Source Current (Pulse) in the MOSFET I SM A Diode Forward Voltage I S =.5A, V GS = V V SD V Notes:. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. V DD = 5V, I AS=.5A, L=mH, R G =25Ω, Starting T J=25ºC 4. I SD.5A, di/dt 2A/uS, V DD BV DSS, Starting T J=25ºC 5. Pulse test: PW 3µs, duty cycle 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Essentially Independent of Operating Temperature. pf ns 2 Version: C67

3 ORDERING INFORMATION PART NO. PACKAGE PACKING TSMNB6SCT B TO-92,pcs / Bulk TSMNB6SCT A3 TO-92 2,pcs / Ammo TSMNB6SCT BG TO-92,pcs / Bulk TSMNB6SCT A3G TO-92 2,pcs / Ammo 3 Version: C67

4 CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) ID, Continuous Drain Current (A) RDS(ON), Drain-Source On-Resistance (Ω) RDS(on), Drain-Source On-Resistance (Normalized) Output Characteristics V GS =V V GS =9V V GS =8V V GS =7V V DS, Drain to Source Voltage (V) On-Resistance vs. Drain Current I D, Drain Current (A) V GS =6V On-Resistance vs. Junction Temperature V GS =V I D =.25A V GS =V T J, Junction Temperature ( C) ID, Continuous Drain Current (A) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) Transfer Characteristics V GS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge V DS =48V I D =.5A Q g, Gate Charge (nc) On-Resistance vs. Gate-Source Voltage I D =.25A V GS, Gate to Source Voltage (V) 4 Version: C67

5 CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) C, Capacitance (pf) ID, Drain Current (A) Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC CISS 5 COSS CRSS. V DS, Drain to Source Voltage (V).. R DS(ON) SINGLE PULSE R ӨJL =5 C/W T C =25 C. V DS, Drain to Source Voltage (V) BVDSS (Normalized) Drain-Source Breakdown Voltage IS, Reverse Drain Current (A) BV DSS vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage Normalized Thermal Transient Impedance, Junction-to-Case.2..9 t, Square Wave Pulse Duration (sec) I D =ma T J, Junction Temperature ( C) V SD, Body Diode Forward Voltage (V) SINGLE PULSE R ӨJC =5 C/W. Duty=.5 Duty=.2 Duty=.. Duty=.5 Duty=.2 Notes: Duty=. Duty = t / t 2 Single T J = T C + P DM x Z ӨJC x R ӨJC Version: C67

6 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-92 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-92 AMMO PACK MARKING DIAGRAM TSC NB6S YML Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6 Version: C67

7 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: C67