YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A <17 mohm <19 mohm General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON) Applications Motor control and drive Battery management UPS Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage V DS 100 V Gate-source Voltage V GS ±20 V Drain Current T A =25 12 T A = I D A Pulsed Drain Current A I DM 120 A Avalanche Energy, Single Pulse(L=10mH) E AS 500 mj Total Power Dissipation P D 3.3 W Thermal Resistance Junction-Lead R θjl 19 Thermal Resistance Junction-to-Ambient B t 10s 38 R θja Steady State 66 / W Junction and Storage Temperature Range T J,T STG -55~+150 Ordering Information (Example) PACKING PREFERED P/N CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE F2 Q12N reel 1 / 7

2 Electrical Characteristics (T J =25 unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D =250μA 100 V Zero Gate Voltage Drain Current I DSS V DS =100V,V GS =0V, T J =25 1 V DS =80V,V GS =0V, T J =85 50 μa Gate-Body Leakage Current I GSS V GS = ±20V, V DS =0V ±100 na Gate Threshold Voltage V GS(th) V DS = V GS, I D =250μA V Static Drain-Source On-Resistance R DS(ON) V GS =10V, I D =12A mω Transconductance g fs V DS =10V, I D =10A 26 S Diode Forward Voltage V SD I S =12A,V GS =0V V Maximum Body-Diode Continuous Current I S 12 A Dynamic Parameters Input Capacitance C iss 3870 Output Capacitance C oss V DS =50V,V GS =0V,f=1MHZ 185 pf Reverse Transfer Capacitance C rss 157 Switching Parameters Total Gate Charge (10V) Q g 80 Gate Source Charge Q gs V GS =10V,V DD =50V,I D =12A 12 nc Gate Drain Charge Q gd 25 Turn-on Delay Time t d(on) 13 Turn-on Rise Time t r V GS =10V,V DD =50V, I D =12A, 14 R GEN =1Ω Turn-off Delay Time t d(off) 25 ns Turn-off Fall Time t f 10 Reverse Recovery Time t rr 33 ns V R =50V, I F =12A, di F /dt=100a/µs Reverse Recovery Charge Q rr 54 nc A. Pulse Test: Pulse Width 300us,Duty cycle 2%. B. Surface Mounted on FR4 Board, t 10 sec. 2 / 7

3 Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. R dson - Junction Temperature 3 / 7

4 Figure7 Safe Operation Area Figure 8. Normalized Maximum Transient Thermal Impedance, Junction-to-Case 4 / 7

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6 SOP-8 Package information 6 / 7

7 Disclaimer The information presented in this document is for reference only. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website or consult your nearest Yangjie s sales office for further assistance. 7 / 7