PPMT20V4E P-Channel MOSFET

Transcription

1 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -20 V GS =-4.5V -4 G() S(2) Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ± V Drain Current Continuous I D -4 A Pulsed Drain Current (Note ) I DM -30 A Total Power Dissipation P D.4 W Junction and Storage Temperature Range T J,T STG -55 to +50 Thermal resistance Parameter Symbol Typ. Units Maximum Junction-to-Ambient (Note 2) R θja 89.3 /W Rev.06

2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-250μA,V GS =0V V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V μa Gate-to-Source Forward Leakage I GSS V GS =±V,V DS =0V - - ± μa Gate Threshold Voltage V GS(th) V DS =V GS, I D =-250μA V Static Drain-Source On-Resistance R DS(ON) V GS =-4.5V, I D =-4A Ω V GS =-2.5V, I D =-4A Ω Forward Trans conductance g FS V DS =-5V, I D =-4A S Total Gate Charge Qg - 7 Gate-to-Source Charge Qgs I D =-4A, V DS =-V, V GS =-4.5V -.2 Gate-to-Drain(Miller) Charge Qgd nc Input Capacitance C ISS pf Output Capacitance C DSS V GS =0V, V DS =-V, f=mhz pf Reverse Transfer Capacitance C RSS - 55 pf Turn-On Delay Time t d(on) Rise Time t r V DD =-V, V GS =-4.5V, Turn-Off Delay Time t d(off) R L =2.5Ω, R GEN =3Ω ns Fall Time t f Diode Forward Voltage (Note 3) V SD V GS =0V, I S =V -.2 V Diode Forward Current (Note 2) I S -2.2 A Note: Repetitive Rating: Pulse width limited by maximum junction temperature. Note2: Surface Mounted on FR4 Board, t sec. Note3: Pulse Test Pulse Width 300μs, Duty Cycle 2%. Typical Characteristics V DD t on t off R L t d(on) t r t d(off) t f V GS R GEN V IN G D S V OUT V OUT V IN 90% 90% Inverted % % 90% 50% 50% % Pulse Width Figure. Switching Test Circuit Figure 2. Switching Waveforms Rev

3 Drain-to-Source Current: ID(A) -.0V V GS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V Bottom -.0V 20μs pulse width T J = Drain-to-Source Voltage :V DS (V) Fig 3. Typical output characteristics Drain-to-Source Current: ID(A) -.0V 20μs pulse width T J = Drain-to-Source Voltage :V DS (V) Fig 4. Typical output characteristics V GS TOP -7.0V -5.0V -4.5V -3.0V -2.5V -.8V -.5V Bottom -.0V Drain-to-Soutce current: ID (A).0 T J =25 T J =50 V DS =-2V 20μs pulse width Gate-to-Source Voltage :V GS (V) Fig 5. Typical transfer characteristics Static Drain-Source On-State Resistance: RDS(ON)(mΩ) I D =-4.0A V GS =-4.5V Junction Temperature :T J ( ) Fig 6. Normalized On-Resistance vs, Temperature C, Capacitance (pf) C ISS C OSS C RSS V GS =0V,f=MHz C ISS =Qgs+Qgd Shorted C RSS =Qgd C OSS =Qds+Qgd Gare-to-Source voltage: VGS (V) I D =-4.0A V DS =-V 0 Drain-to-Source Volatge :V DS (V) Fig 7. Typical Capacitance vs. Drain-to-Source voltage Total Gate Charge :Q G (nc) Fig 8. Typical Gate Charge vs. Gate-to-Source voltage Rev

4 0 Operation in this area limited by R DS(on) Reverse Drain Current :ISD (A) T j =50 T J =25 V GS =0V Source-to-Drain voltage :V SD (V) Fig 9. Typical Source-Drain Diode Forward Voltage Drain Current: ID (A) 0.0 T C =25 T J =50 Single Pulse us us ms ms Drain-to-Source voltage: V DS (V) Fig. Maximum Safe Operating Area Drain Current: ID(A) Single Pulse Avalanche Energy: EAS (mj) TOP Bottom I D -.9A -3.4A -4.0A Case Temperature:T C ( ) Fig. Maximum Drain Current vs. Case Temperature Junction Temperature : Starting T J ( ) Fig 2. Maximum Avalanche Energy vs. Drain Current 0 Thermal Response (ZthJA) I D = Single Pulse (Thermal Response) t2 Notes:. Duty factor D=t/t2 2. Peak T J =P DM *Z thja +T A Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient P DM t Rev

5 Drain-to-Source voltage: RDS(on) (Ω) I D =-4.0A Gate-to-Source voltage: V GS (V) Fig 4. Typical On-Resistance vs. Gate Voltage Drain-to-Source On Resistance: RDS(on) (Ω) V GS =-.8V V GS =-2.5V V GS =-4.5V Drain Current: I D (A) Fig 5. Typical On-Resistance vs. Drain Current 0.8 Gate threshold Voltage: VGS(th) (Ω) I D =-250μA Temperature: T J ( ) Fig6. Typical Threshold Voltage vs. Junction Temperature Rev

6 Product dimension(sot-23) A (3) θ C B () (2) D F E H G K J L Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ 0 0 Rev

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