PDPM6UT20V1E P-Channel MOSFET

Transcription

1 PChannel MOSFET Description The MOSFET provide the best combination of fast switching, low onresistance and costeffectiveness. SOT363 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (ma) S2 6 D2.45@ =4.5V 2.62@ =2.5V 8 G2 2 5 G.86@ =.8V D 3 4 S Absolute maximum rating@25 Parameter Symbol Value Units DrainSource Voltage V DS 2 V GateSource Voltage ± V Continuous Drain Curren Continuous I D 8 Pulsed I DP 2 ma Maximum Power Dissipation (Note )(Note 3) P D 3 mw Pulsed Drain Current(Note 2) I DM.2 A Operating Junction Temperature T J 5 Lead Temperature T L 26 Storage Temperature Range T stg 55 to +5 Thermal resistance Parameter Symbol Min. Typ. Max. Units JunctiontoCase Thermal Resistance R θja 45 C/W Rev.6.

2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage BV DSS I D =25uA, =V 2 V Zero Gate Voltage Drain Current I DSS V DS =6V, =V μa Gatetosource Leakage Current I GSS V DS =V, =±8V ± μa ON CHARACTERISTICS Gate Threshold Voltage (th) VGS = VDS, ID = 25uA V =4.5V, I D =7mA 45 7 mω Draintosource Onresistance (Note4) R DS(ON) =2.5V, I D =3mA mω =.8V, I D =25mA 86 2 mω Forward Transconductance g FS V DS =5V, I D =45mA.25 s CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 72 pf Output Capacitance C OSS =V, V DS =V, f=mhz 9.5 pf Reverse Transfer Capacitance C RSS 9.8 pf Total Gate Charge Q G(TOT).9 nc Threshold Gate Charge GatetoSource Charge Q G(TH) Q GS =4.5V,V DS =V, I D =45mA..5 nc nc GatetoDrain Charge Q GD.3 nc SWITCHING CHARACTERISTICS TurnOn Delay Time td(on) 43 ns Rise Time tr =4.5V, V DS =V, 37 ns I D =45mA TurnOff Delay Time td(off) R G =6Ω 45 ns Fall Time tf 25 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD =V,I S =5mA V Note:. Surface mounted on FR4 board using minimum pad size, oz copper 2. Pulse width<38μs, Single pulse 3. Maximum junction temperature TJ=5 C. 4. Pulse test: Pulse width <38 us duty cycle <2%. Rev

3 Typical Characteristics RDS(on) OnResistance (mω) IDS Drain to Source Current (A) = 2.5 ~ 5V V DS Drain to Source Voltage (V) Fig. Output characteristics I DS Drain to Source Current (A) = 2.V =.5V =2.5V =4.5V RDS(on) OnResistance (mω) IDS Drain Current (ma) V DS = 5V T=5 C Gate to Drain Voltage (V) Fig 2. Transfer characteristics Gate to Source Voltage(V) T=25 C T=25 C I DS =.45A Fig 3. OnResistance vs. Drain current Fig 4. OnResistance vs. GatetoSource voltage Normalized OnResistance.4 =4.5V I D =.45A.2..8 Normalized Gate to Source Voltage I D =25uA Temperature(oC) Temperature(oC) Fig 5. OnResistance vs. Junction temperature Fig 6. Threshold voltage vs. Temperature Rev

4 CCapacitance (pf) 2 = f=khz 9 Ciss 6 3 Coss Crss ISD Source to Drain Current (ma) 25 2 T=25 C 5 T=25 C V DS Drain to Source Voltage (V) Fig 7. Capacitance. V SD Source to Drain Voltage(V) Fig 8. Body diode forward voltage 9 Power (W) 6 3 T J(Max) =5 C T A =25 C E4 E3.. ID Drain to Source Current (A). Limit by Rdson T A =25 C I DM Limit Single Pulse. BVdss Limit. DC us ms ms ms s s Pulse width (S) V DS Drain to Source Voltage (V) * >minimum at which R DS(on) is specified Fig 9. Single pulse power Fig. Safe operating power 5 VGS Gate to Source Voltage(V) V DS = V I D =.45A Total gate charge: Qg (nc) Fig. Dynamic input characteristics Rev

5 Normalized Effective Transient Thermal Impedance.. E Duty cycle=.5 single pulse E4 E6 E5 E4 E3.. Square Wave Pulse Duration (sec) PDM. Duty Cycle, D=t/t2 2. Per Unit Base =RθJA= 455 C/W 3. TJMTA = PDM RθJA 4. Surface Mounted t t2 Transient thermal response (JunctiontoAmbient) Rev

6 Product dimension (SOT363) A (6) C B () D E H F G Dim Millimeters Inches MIN MAX MIN MAX A B C D.65BSC.26BSC E F G....4 H Ordering information Device Package Shipping SOT363(PbFree) 3 / Tape & Reel Rev

7 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclearreactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev