ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET

Transcription

1 A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q = V 2. =.9 Q = -V -2.2 = Description This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive. D D2 Features 0 V Complementary in SOIC package G G2 Low on-resistance Fast switching speed S S2 Low voltage ( = 4.5 V) gate drive Q N-Channel Q2 P-Channel Applications DC motor control Backlighting Class D Audio Output Stages (<0W) S G D D Ordering information S2 D2 Device Reel size (inches) Tape width (mm) Quantity per reel G2 D2 ZXMCA86N8TC 3 2 2,500 Top view Device marking ZXMC A86 Issue.3 - March 2009

2 ZXMCA86N8 Absolute maximum ratings Parameter Symbol N- channel Q P- channel Q2 Drain-Source voltage S 0-0 V Gate-Source voltage ±20 ±20 V Continuous Drain = V; T A =25 C = V; T A =70 C = V; T A =25 C = V; T A =25 C = V; T L =25 C (f)(d) 2. Pulsed Drain = V; T A =25 C (c)(d) M A Continuous Source current (Body diode) at T A =25 C (b)(d) I S A Pulsed Source current (Body diode) at T A =25 C (c)(d) I SM A Power dissipation at T A =25 C (a)(d) Linear derating factor Power dissipation at T A =25 C (a)(e) Linear derating factor Power dissipation at T A =25 C (b)(d) Linear derating factor Power dissipation at T L =25 C (f)(d) Linear derating factor P D.3.0 P D P D P D Unit A W mw/ C W mw/ C W mw/ C W mw/ C Operating and storage temperature range T j, T stg -55 to 50 C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a)(d) R θja 0 C/W Junction to ambient (a)(e) R θja 70 C/W Junction to ambient (b)(d) R θja 60 C/W Junction to lead (f)(d) R θjl C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x.6mm FR4 PCB with high coverage of single sided oz copper, in still air conditions; the device is measured when operating in a steady-state condition. (b) Same as note (a), except the device is measured at t sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition. Issue.3 - March

3 ZXMCA86N8 Thermal characteristics 0m m R DS(ON) Limited DC s 0ms Note (a)(d) ms ms Single Pulse, T 0us amb =25 C 0. 0 Drain-Source Voltage (V) N-channel Safe Operating Area - 0m m R DS(ON) Limited Note (a)(d) DC s 0ms Single Pulse, T amb =25 C ms ms 0us Drain-Source Voltage (V) P-channel Safe Operating Area Thermal Resistance ( C/W) D= D= Single Pulse D=0.05 D=0. 0 0µ m m 0m 0 k Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) Two active die One active die Temperature ( C) Derating Curve Maximum Power (W) 0 Single Pulse T amb =25 C 0µ m m 0m 0 k Pulse Width (s) Pulse Power Dissipation Issue.3 - March

4 ZXMCA86N8 Q (N-channel) electrical characteristics (at T amb = 25 C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current V (BR)DSS 0 V = 250µA, = 0V SS 0.5 µa = 0V, = 0V Gate-Body leakage I GSS 0 na = ±20V, = 0V Gate-Source threshold voltage Static Drain-Source on-state resistance (a) (th) V = 250µA, = R DS(on) Ω = V, =.0A =, = 0.5A Forward Transconductance (a) (c) g fs 4.8 S = 5V, =.6A Dynamic Capacitance (c) Input capacitance C iss 497 pf Output capacitance C oss 29 pf Reverse transfer capacitance C rss 8 pf (b) (c) Switching Turn-on-delay time t d(on) 2.9 ns Rise time t r 2. ns Turn-off delay time t d(off) 2. ns Fall time t f 5.0 ns Gate charge (c) Total Gate charge Q g 9.2 nc Gate-Source charge Q gs.7 nc Gate-Drain charge Q gd 2.5 nc = 50V, = 0V f= MHz V DD = 50V, = V =.0A R G 6.0Ω, = 50V, = V =.6A Source Drain diode Diode forward voltage (a) V SD V I S =.7A, = 0V Reverse recovery time (c) t rr 32 ns Reverse recovery charge (c) Q rr 40 nc I S =.7A, di/dt= 0A/µs NOTES: (a) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue.3 - March

5 ZXMCA86N8 Q (N-channel) typical characteristics ID V 5V 0. Drain-Source Voltage (V) Output Characteristics VGS 3V ID T = 50 C V 0. 5V Drain-Source Voltage (V) Output Characteristics 3V VGS 2.5V ID 0. T = 50 C VDS = V Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) VGS = V ID =.6A 0.6 VGS = VDS ID = 250uA Tj Junction Temperature ( C) Normalised Curves v Temperature RDS(on) VGS(th) RDS(on) Drain-Source On-Resistance (Ω) 3V VGS On-Resistance v Drain Current 5V V ISD Reverse T = 50 C V SD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage Issue.3 - March

6 ZXMCA86N8 Q (N-channel) typical characteristics continued C Capacitance (pf) CISS COSS CRSS VGS = 0V f = MHz Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) ID =.6A VDS = 50V Q - Charge (nc) Gate-Source Voltage v Gate Charge Test circuits Q G Current regulator 2V 50k Same as D.U.T V G Q GS Q GD I G D.U.T Charge Basic gate charge waveform Gate charge test circuit 90% R D % R G V DD t d(on) t r t d(off) t r t (on) t (on) Switching time waveforms Switching time test circuit Issue.3 - March

7 ZXMCA86N8 Q (P-channel) electrical characteristics (at T amb = 25 C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current V (BR)DSS -0 V = -250µA, = 0V SS -0.5 µa = -0V, = 0V Gate-Body leakage I GSS 0 na = ±20V, = 0V Gate-Source threshold voltage Static Drain-Source on-state resistance (a) (th) V = -250µA, = R DS(on) Ω = -V, = -.0A = -, = -0.5A Forward Transconductance (a) (c) g fs 4.7 S = -5V, = -2.A Dynamic Capacitance (c) Input capacitance C iss 77 pf Output capacitance C oss 55 pf Reverse transfer capacitance C rss 46 pf (b) (c) Switching Turn-on-delay time t d(on) 4.3 ns Rise time t r 5.2 ns Turn-off delay time t d(off) 20 ns Fall time t f 2 ns Gate charge (c) Total Gate charge Q g 6.5 nc Gate-Source charge Q gs 2.5 nc Gate-Drain charge Q gd 5.4 nc = -50V, = 0V f= MHz V DD = -50V, = -V = -A R G 6.0Ω, = -50V, = -V = -2.A Source Drain diode Diode forward voltage (a) V SD V I S = -.7A, = 0V Reverse recovery time (c) t rr 43 ns Reverse recovery charge (c) Q rr 77 nc I S = -.7A, di/dt= 0A/µs NOTES: (a) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue.3 - March

8 ZXMCA86N8 Q2 (P-channel) typical characteristics - 0. V 5V 0. - Drain-Source Voltage (V) Output Characteristics T = 50 C V 5V 3V 0. - Drain-Source Voltage (V) Output Characteristics - - T = 50 C - = V Gate-Source Voltage (V) Typical Transfer Characteristics Normalised R DS(on) and (th) = -V = - 2.A = = -250uA Tj Junction Temperature ( C) Normalised Curves v Temperature R DS(on) (th) R DS(on) Drain-Source On-Resistance (Ω) - 5V On-Resistance v Drain Current 7V V -I SD Reverse T = 50 C E V SD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage Issue.3 - March

9 ZXMCA86N8 Q2 (P-channel) typical characteristics continued C Capacitance (pf) C ISS C OSS C RSS = 0V f = MHz Drain - Source Voltage (V) Capacitance v Drain-Source Voltage - Gate-Source Voltage (V) = -2.A = -50V Q - Charge (nc) Gate-Source Voltage v Gate Charge Test circuits Q G Current regulator 2V 0.2 F 50k Same as D.U.T V G Q GS Q GD I G D.U.T Charge Basic gate charge waveform Gate charge test circuit 90% R D R G V DD % Pulse width S Duty factor 0.% t r t d(off) t r t d(on) t (on) t (on) Switching time waveforms Switching time test circuit Issue.3 - March

10 ZXMCA86N8 Packaging details - SO8 DIM Inches Millimeters DIM Inches Millimeters Min. Max. Min. Max. Min. Max. Min. Max. A e BSC.27 BSC A b D c H θ E L Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue.3 - March 2009

11 ZXMCA86N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 2009, Diodes Incorporated Issue.3 - March 2009