ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = ;I D = 6.2A DESCRIPTION FEATURES APPLICATIONS

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1 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN3A06DN8 SUMMARY V (BR)DSS = 30V; R DS(ON) = ; = 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SO8 Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMN3A06DN8TA 7 2mm 500 units ZXMN3A06DN8TC 3 2mm 2500 units PINOUT DEVICE MARKING ZXMN 3A06D Top view

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage S 30 V Gate Source Voltage 20 V Continuous Drain Current ( =V; T A =25 C)(b)(d) ( =V; T A =70 C)(b)(d) ( =V; T A =25 C)(a)(d) Pulsed Drain Current (c) M 30 A Continuous Source Current (Body Diode) (b) I S 3.7 A Pulsed Source Current (Body Diode)(c) I SM 30 A Power Dissipation at T A =25 C (a)(d) Linear Derating Factor Power Dissipation at T A =25 C (a)(e) Linear Derating Factor Power Dissipation at T A =25 C (b)(d) Linear Derating Factor P D.25 P D P D Operating and Storage Temperature Range T j :T stg -55 to +50 C A W mw/ C W mw/ C W mw/ C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θja 0 C/W Junction to Ambient (a)(e) R θja 69 C/W Junction to Ambient (b)(d) R θja 58 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die (e) For device with two active die running at equal power. 2

3 TYPICAL CHARACTERISTICS 3

4 ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 30 V =250µA, =0V Zero Gate Voltage Drain Current SS 0.5 A =30V, =0V Gate-Body Leakage I GSS 0 na =±20V, =0V Gate-Source Threshold Voltage (th) V I =250 A, V D DS = Static Drain-Source On-State Resistance () R DS(on) =V, =9A =4.5V, =7.4A Forward Transconductance ()(3) g fs 3.5 S =5V, =9A DYNAMIC (3) Input Capacitance C iss 796 pf Output Capacitance C oss 37 pf =25V, =0V, f=mhz Reverse Transfer Capacitance C rss 83.5 pf SWITCHING(2) (3) Turn-On Delay Time t d(on) 3.0 ns Rise Time t r 6.4 ns Turn-Off Delay Time t d(off) 2.6 ns Fall Time t f 9.4 ns V DD =5V, =3.5A R G =6.0, =V Gate Charge Q g 9.2 nc =5V, =5V, =3.5A Total Gate Charge Q g 7.5 nc Gate-Source Charge Q gs 2.3 nc Gate-Drain Charge Q gd 3. nc SOURCE-DRAIN DIODE =5V, =V, =3.5A Diode Forward Voltage () V SD V T J =25 C, I S =5.A, =0V Reverse Recovery Time (3) t rr 7.8 ns T J =25 C, I F =3.5A, Reverse Recovery Charge (3) Q rr.6 nc di/dt= 0A/µs NOTES () Measured under pulsed conditions. Width 300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4

5 TYPICAL CHARACTERISTICS T = 25 C V 4V 3V 2.5V 2V 0..5V Drain-Source Voltage (V) Output Characteristics T = 50 C V 4V V 3V 2.5V Drain-Source Voltage (V) Output Characteristics 2V.5V V T = 50 C T = 25 C = V Gate-Source Voltage (V) Typical Transfer Characteristics Normalised R DS(on) and (th) = V =.5A R DS(on) (th) 0.6 = = 250uA Tj Junction Temperature ( C) Normalised Curves v Temperature R DS(on) Drain-Source On-Resistance (Ω) V 2.5V 3V T = 25 C V On-Resistance v Drain Current V I SD Reverse 0 T = 50 C T = 25 C V SD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5

6 TYPICAL CHARACTERISTICS C Capacitance (pf) C ISS C OSS =0V f=mhz C RSS Drain-SourceVoltage(V) Capacitance v Drain-Source Voltage Gate-Source Voltage (V) =3.5A = 5V Q - Charge (nc) Gate-SourceVoltagevGateCharge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit 6

7 PACKAGE OUTLINE PACKAGE DIMENSIONS DIM INCHES MILLIMETRES MIN MAX MIN MAX A A D H E L e BSC.27 BSC b c CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES h Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) Fax: (44) Zetex GmbH Streitfeldstraße 9 D-8673 München Germany Telefon: (49) Fax: (49) Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY788 USA Telephone: (63) Fax: (63) Zetex (Asia) Ltd Metroplaza, Tower Hing Fong Road Kwai Fong Hong Kong Telephone: (852) Fax: (852) These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to 7