G2 D1 DMC1028UFDB. Features. Product Summary. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information
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1 YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C V = 4.5V.A V = 3.3V 5.5A V = 2.5V 5.3A V = -4.5V -3.4A V = -3.3V -3.2A V = -2.5V -3.A COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Low Profile,.mm Max Height ESD HBM Protected up to.5kv, MM Protected up to 5V. Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data This MOSFET is designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Optimized for Point of Load (POL) Synchronous Buck Converter that steps down from 3.3V to V for core voltage supply to ASICs. Target applications are Ethernet Network Controllers used in: Routers, Switchers, Network Interface Controllers (NICs) Digital Subscriber Line (DSL) Set-Top Boxes (STBs) Case: U-DFN22- (Type B) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-22, Method 28 e4 Terminals Connections: See Diagram Below Weight:.5 grams (Approximate) D D2 U-DFN22- (Type B) ESD PROTECTED D2 Pin G S2 D2 D S Bottom View G2 D G Gate Protection Diode S N-CHANNEL MOSFET G2 Internal Schematic Gate Protection Diode S2 P-CHANNEL MOSFET Ordering Information (Note 4) Notes: Part Number Case Packaging -7 U-DFN22- (Type B) 3,/Tape & Reel -3 U-DFN22- (Type B),/Tape & Reel. No purposely added lead. Fully EU Directive 22/95/EC (RoHS) & 2/5/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information D8 D8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 25) M = Month (ex: 9 = September) Date Code Key Year Code C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D of May 25
2 Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic Symbol Q Q2 N-CHANNEL P-CHANNEL Units Drain-Source Voltage V DSS 2-2 V Gate-Source Voltage V S ±8 ±8 V Continuous Drain Current (Note 5) V = 4.5V Steady T A = +25 C I State D A T A = +7 C T t < 5s A = +25 C I D A T A = +7 C Maximum Continuous Body Diode Forward Current (Note 5) I S A Pulsed Drain Current (µs Pulse, Duty Cycle = %) I DM 4-2 A Avalanche Current L =.mh I AS 2-2 A Avalanche Energy L =.mh E AS mj Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady State.3 P t < 5s D.89 W Thermal Resistance, Junction to Ambient (Note 5) Steady State 92 R t < 5s θja C/W Thermal Resistance, Junction to Case (Note 5) R θjc 9 Operating and Storage Temperature Range T J, T STG -55 to +5 C Note: 5. Device mounted on x FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics Q N-CHANNEL (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS V V = V, I D = 25μA Zero Gate Voltage Drain Current T J = +25 C I DSS - -. μa V DS = 2V, V = V Gate-Source Leakage I S - - ± μa V = ±8V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V (TH).4 - V V DS = V, I D = 25μA V = 4.5V, I D = 5.2A Static Drain-Source On-Resistance R DS(ON) V = 3.3V, I D = 5.A mω V = 2.5V, I D = 4.8A V =.8V, I D = 2.5A Diode Forward Voltage V SD V V = V, I S = A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss pf V DS = V, V = V, Output Capacitance C oss pf f =.MHz Reverse Transfer Capacitance C rss pf Gate Resistance R g Ω V DS = V, V = V, f = MHz Total Gate Charge (V = 3.3V) nc Total Gate Charge (V = 4.5V) Q g nc Total Gate Charge (V = 8V) nc V DS = V, I D =.8A Gate-Source Charge Q gs nc Gate-Drain Charge Q gd nc Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R ns V DD = V, V = 4.5V, Turn-Off Delay Time t D(OFF) ns R L =.Ω, R G = Ω Turn-Off Fall Time t F ns Body Diode Reverse Recovery Time t RR ns I S = 5.4A, di/dt = A/μs Body Diode Reverse Recovery Charge Q RR nc I S = 5.4A, di/dt = A/μs 2 of May 25
3 Electrical Characteristics Q2 P-CHANNEL A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note ) Drain-Source Breakdown Voltage BV DSS V V = V, I D = -25μA Zero Gate Voltage Drain Current T J = +25 C I DSS μa V DS = -2V, V = V Gate-Source Leakage I S - - ± μa V = ±8V, V DS = V ON CHARACTERISTICS (Note ) Gate Threshold Voltage V (TH) V V DS = V, I D = -25μA V = -4.5V, I D = -3.8A V = -3.3V, I D = -3.5A Static Drain-Source On-Resistance R DS(ON) - 7 mω V = -2.5V, I D = -3.3A V = -.8V, I D = -.A - 2 V = -.5V, I D = -.5A Diode Forward Voltage V SD V V = V, I S = -A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss pf V DS = -V, V = V, Output Capacitance C oss pf f =.MHz Reverse Transfer Capacitance C rss pf Gate Resistance R g Ω V DS = V, V = V, f = MHz Total Gate Charge (V = -3.3V) nc Total Gate Charge (V = -4.5V) Q g nc Total Gate Charge (V = -8V) nc V DS = -V, I D = -4.9A Gate-Source Charge Q gs -. - nc Gate-Drain Charge Q gd nc Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R ns V DD = -V, V = -4.5V, Turn-Off Delay Time t D(OFF) ns R L = 2.Ω, R G = Ω Turn-Off Fall Time t F ns Body Diode Reverse Recovery Time t RR ns I S = -3.9A, di/dt = A/μs Body Diode Reverse Recovery Charge Q RR nc I S = -3.9A, di/dt = A/μs Notes:. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 3 of May 25
4 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Typical Characteristics - N-CHANNEL V = 4.5V V =.8V V DS = 5V V = 3.5V V = 3.V V = 2.5V V = 2.V V =.5V V =.2V V =.V 3 T A = 5 o C Figure Typical Output Characteristic V, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic V =.8V V = 4.5V V = 2.5V I, DRAIN-SOURCE CURRENT (A) D Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage V = 4.5V V = 3.3V T A = 5 o C I D = 2.5A I D = 5.2A I D = 4.8A V, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic V = 4.5V, I D = A V =.8V, I D = 3A Figure 5 Typical On-Resistance vs Drain Current and Temperature Figure On-Resistance Variation with Temperature 4 of May 25
5 V (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) V (th), GATE THESHOLD VOLTAGE (V) Typical Characteristics - N-CHANNEL (continued) V =.8V, I D = 3A V = 4.5V, I D = A Figure 7 On-Resistance Variation with Temperature V = V I D = 25µA I D = ma Figure 8 Gate Theshold Variation vs Junction Temperature f=mhz 4 2 C iss 8 T A = 5 o C C oss C rss V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Figure Typical Junction Capacitance R DS(ON) Limited 4 2 V DS = V, I D =.8A Q g (nc) Fiure Gate Charge DC P W =s P W =s P. T J(Max) =5 W =ms T A =25 P W =ms V =4.5V Single Pulse P W =ms DUT on *MRP Board P W =µs... Figure 2 SOA, Safe Operation Area 5 of May 25
6 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) Typical Characteristics - P-CHANNEL V = -4.5V V = -3.5V V = -3.V V = -2.5V 8 V DS = -5V 2. V = -2.V V = -.8V V = -.5V V = -.2V. 2 3 Figure 3 Typical Output Characteristic T A = 5 o C V, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic.25 V = -.5V.25 I D = -3.8A V = -.8V.5 I D = -3.3A. V = -2.5V V = -4.5V V = -3.3V I D, DRAIN-SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Gate Voltage V = -4.5V T A = 5 o C I D = -.A V, GATE-SOURCE VOLTAGE (V) Figure Typical Transfer Characteristic V = -4.5V, I D = -5.A. V = -.8V, I D = -.A Figure 7 Typical On-Resistance vs Drain Current and Temperature Figure 8 On-Resistance Variation with Temperature of May 25
7 I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) V (th), GATE THESHOLD VOLTAGE (V) Typical Characteristics - P-CHANNEL (continued) V = -.8V, I D = -.A.8. I D = -ma..4 I D = -25µA.4 V = -4.5V, I D = -5.A Figure 9 On-Resistance Variation with Temperature Figure 2 Gate Theshold Variation vs Junction Temperature 8 V = V f=mhz 4 2 C iss 8 T A = 5 o C C oss 4 C rss V SD, SOURCE-DRAIN VOLTAGE (V) Figure 2 Diode Forward Voltage vs. Current Figure 22 Typical Junction Capacitance 7 of May 25
8 r(t), TRANSIENT THERMAL RESISTANCE V (V) 8 R DS(ON) Limited P W =ms 4 2 V DS = -V, I D = -4.9A Q g (nc) Figure 23 Gate Charge DC P W =s P W =s. T J(Max) =5 T A =25 P W =ms V =4.5V Single Pulse P W =ms DUT on *MRP Board. P W =µs. Figure 24 SOA, Safe Operation Area Typical Characteristics - P-CHANNEL (cont.) D=.5 D=.3 D=.7 D=.9. D=. D=.5. D=.2 D=. D=.5 R θja (t)=r(t) * R θja R θja = /W D=Single Pulse Duty Cycle, D=t/t2. E t, PULSE DURATION TIME (sec) Figure 25 Transient Thermal Resistance 8 of May 25
9 Typical Application Circuit is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to V with a load current up to 3A. This is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to V step down, which has a duty cycle of 33%. This means that for 7% of the cycle, the synchronous switch (Q) is on and efficiency is dominated by the conduction losses; hence, the need for low R DS(on) N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses become significant. Package Outline Dimensions Please see AP22 at for the latest version. Pin# ID A E E2 A z f e D d D2 b f A3 L SEATING PLANE U-DFN22- Type B Dim Min Max Typ A A.5.2 A3.3 b D d.45 D e.5 E E2.9.. f.5 L z.225 All Dimensions in mm 9 of May 25
10 Suggested Pad Layout Please see AP2 at for the latest version. Y C X2 G Z Y X G G Dimensions Value (in mm) Z.7 G.2 G.4 X. X2.45 Y.37 Y.7 C.5 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright 25, Diodes Incorporated of May 25
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2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
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Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
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Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
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A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
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Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
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A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
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Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
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DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
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Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
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650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
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Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
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A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationPart Number Case Packaging DMN2024U-7 SOT /Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel
N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C 25mΩ @ V = 4.5V 6.8 29mΩ @ V = 2.5V 5.5 escription and pplications This MOSFET
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1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
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Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
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Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
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Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust
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DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
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TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
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TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
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Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
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V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
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TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER
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TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
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HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
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40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
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V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
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SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
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SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
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SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
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Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
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