Part Number Case Packaging DMN2024U-7 SOT /Tape & Reel DMN2024U-13 SOT23 10,000/Tape & Reel
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1 N-CHNNEL ENHNCEMENT MOE MOSFET Product Summary Features and Benefits VNCE INFORMTION V (BR)SS 2V R S(ON) Max I Max T = +25 C V = 4.5V 6.8 V = 2.5V 5.5 escription and pplications This MOSFET is designed to minimize the on-state resistance (R S(ON)) yet maintain superior switching performance, which make it ideal for high-efficiency power management applications. Backlighting Power-Management Functions C-C Converters Motor Control G Low On-Resistance Low-Input Capacitance Fast Switching Speed ES Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and ntimony Free. Green evice (Note 3) Mechanical ata Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-ST-2 Terminals: Finish Matte Tin nnealed over Copper Leadframe. Solderable per MIL-ST-22, Method 28 e3 Terminals Connections: See iagram Below Weight:.9 grams (pproximate) ES-Protected Gate Gate Protection iode Top View Internal Schematic Top View S G S Ordering Information (Note 4) Part Number Case Packaging MN224U-7 SOT23 3/Tape & Reel MN224U-3 SOT23,/Tape & Reel Notes:. No purposely added lead. Fully EU irective 22/95/EC (RoHS), 2/65/EU (RoHS 2) & 25/863/EU (RoHS 3) compliant. 2. See for more information about iodes Incorporated s definitions of Halogen- and ntimony-free, "Green" and Lead-free. 3. Halogen- and ntimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information 22K 5U YM 5U = Product Type Marking Code YM = ate Code Marking Y or Y= Year (ex: F = 28) M = Month (ex: 9 = September) ate Code Key Year Code F G H I J K L M Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov ec Code O N MN224U ocument number: S496 Rev. 2-2 of 7 June 28
2 Maximum Ratings = +25 C, unless otherwise specified.) Characteristic Symbol Value Units rain-source Voltage V SS 2 V Gate-Source Voltage V S ± V Continuous rain Current (Note 6) V = 4.5V Steady T = +25 C 6.8 I State T = +7 C 5.5 Maximum Continuous Body iode Forward Current (Note 6) I S 2.2 Pulsed rain Current (µs pulse, duty cycle = %) I M 45 VNCE INFORMTION Thermal Characteristics Characteristic Symbol Value Units Total Power issipation (Note 5) P.8 W Thermal Resistance, Junction to mbient (Note 5) Steady State R ϴJ 59 C/W Total Power issipation (Note 6) P.4 W Thermal Resistance, Junction to mbient (Note 6) Steady State R ϴJ 92 C/W Operating and Storage Temperature Range T J, T STG -55 to +5 C Electrical Characteristics (@T = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS (Note 7) rain-source Breakdown Voltage BV SS 2 V V = V, I = 25µ Zero Gate Voltage rain Current T J = +25 C I SS. µ V S = 2V, V = V Gate-Source Leakage I S ± µ V = ±8V, V S = V ON CHRCTERISTICS (Note 7) Gate Threshold Voltage V (TH) V V S = V, I = 25µ 6 25 V = 4.5V, I = 6.5 Static rain-source On-Resistance R S(ON) mω V = 2.5V, I = V =.8V, I = 3.5 iode Forward Voltage V S.8.2 V V = V, I = 5 YNMIC CHRCTERISTICS (Note 8) Input Capacitance C iss 647 pf V S = V, V = V Output Capacitance C oss 78 pf f =.MHz Reverse Transfer Capacitance C rss 38 pf Gate Resistance R g 628 Ω V S = V, V = V, f = MHz Total Gate Charge Q g 7. nc Gate-Source Charge Q gs.9 nc V = 4.5V, V S = V, I = 6.5 Gate-rain Charge Q gd.7 nc Turn-On elay Time t (ON) 98 ns Turn-On Rise Time t R 4 ns V S = V, V = 4.5V, Turn-Off elay Time t (OFF) 24 ns R L = Ω, R G = 6Ω, I = Turn-Off Fall Time t F 434 ns Reverse Recovery Time t RR 245 ns I F =., di/dt = /µs Reverse Recovery Charge Q RR 49 nc I F =., di/dt = /μs Notes: 5. evice mounted on FR-4 PCB with minimum recommended pad layout. 6. evice mounted on FR-4 PCB with high-coverage 2oz copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. MN224U ocument number: S496 Rev of 7 June 28
3 VNCE INFORMTION I, RIN CURRENT () R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) V =.8V V = 2.V V = 2.5V V = 3.V V = 4.5V V = 6.V V = V V =.2V V =.V V =.5V V, RIN-SOURCE VOLTGE (V) S Figure Typical Output Characteristic V =.8V V = 2.5V V = 4.5V I, RIN-SOURCE CURRENT () Figure 3 Typical On-Resistance vs. rain Current and Gate Voltage.3 V = 4.5V T = 5 C T = 25 C T = 85 C T = 25 C T = -55 C I, RIN CURRENT () Figure 5 Typical On-Resistance vs. rain Current and Temperature I, RIN CURRENT () R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) 5 2 R S(ON), RIN-SOURCE ON-RESISTNCE (NORMLIZE) V = 5.V S T = 85 C T = 25 C T = 5 C T = 25 C T = -55 C V, GTE-SOURCE VOLTGE (V) Figure 2 Typical Transfer Characteristics I = I = 5.5 I = V, GTE-SOURCE VOLTGE (V) Figure 4 Typical rain-source On-Resistance vs. Gate-Source Voltage V = 4.5V I = 6.5 V = 2.5V I = 5.5 V =.8V I = T J, JUNCTION TEMPERTURE ( C) Figure 6 On-Resistance Variation with Temperature MN224U ocument number: S496 Rev of 7 June 28
4 VNCE INFORMTION R S(ON), RIN-SOURCE ON-RESISTNCE ( Ω ) I, SOURCE CURRENT () S V =.8V I = 3.5 V = 4.5V I = 6.5 V = 2.5V I = T J, JUNCTION TEMPERTURE ( C) Figure 7 On-Resistance Variation with Temperature T = 25 C T = 5 C T = 85 C T = -55 C T = 25 C V S, SOURCE-RIN VOLTGE (V) Figure 9 iode Forward Voltage vs. Current V (th), GTE THRESHOL VOLTGE (V) C, JUNCTION CPCITNCE (pf) I = 25µ I = m T J, JUNCTION TEMPERTURE ( C) Figure 8 Gate Threshold Variation vs. mbient Temperature T C iss C oss C rss f=mhz V S, RIN-SOURCE VOLTGE (V) Figure Typical Junction Capacitance V GTE THRESHOL VOLTGE (V) V S = V I = Q g, TOTL GTE CHRGE (nc) Figure Gate Charge -I, RIN CURRENT (). C P = s W T J(max) = 5 C P = s W P = ms W T C = 25 C V = 4.5V Single Pulse UT on *MRP Board P = µs W P = ms W P = ms W.. -V RIN-SOURCE VOLTGE (V) S Figure 2 SO, Safe Operation rea MN224U ocument number: S496 Rev of 7 June 28
5 VNCE INFORMTION r(t), TRNSIENT THERML RESISTNCE. =.. =.9 =.7 =.5 =.3 =.5 =.2 =. =.5 R θj (t) = r(t) * Rθ J R = 55 C/W θj uty Cycle, = t/ t2 = Single Pulse. E t, PULSE URTION TIME (sec) Figure 3 Transient Thermal Resistance MN224U ocument number: S496 Rev of 7 June 28
6 Package Outline imensions Please see for the latest version. VNCE INFORMTION K C K B F H G J M L ll 7 SOT23 GUGE PLNE.25 a L SOT23 im Min Max Typ B C F G H J.3..5 K K L L M a 8 -- ll imensions in mm Suggested Pad Layout Please see for the latest version. SOT23 Y Y C imensions Value (in mm) C 2. X.8 X.35 Y.9 Y 2.9 X X MN224U ocument number: S496 Rev of 7 June 28
7 IMPORTNT NOTICE IOES INCORPORTE MKES NO WRRNTY OF NY KIN, EXPRESS OR IMPLIE, WITH REGRS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WRRNTIES OF MERCHNTBILITY N FITNESS FOR PRTICULR PURPOSE (N THEIR EQUIVLENTS UNER THE LWS OF NY JURISICTION). VNCE INFORMTION iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. s used herein:. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 28, iodes Incorporated MN224U ocument number: S496 Rev of 7 June 28
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Green 3.W SURFACE MOUNT POWER ENER DIODE Features Mechanical Data 3.W Power Dissipation Case: SMB Ideally Suited for Automated Assembly Case Material: Molded Plastic. UL Flammability Classification 3.3V
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationGreen. Part Number Compliance Case Packaging DBF Commercial DBF 3,000/Tape & Reel
Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More information-2.7A. Pin Out - Top View
6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This
More informationZXMS6004N8. Product Summary. Features and Benefits ADVANCE INFORMATION. Description. Mechanical Data. Applications. Ordering Information (Note 4)
AVANCE INFORMATION Clamping Product Summary 60V N-CHANNEL SELF PROTECTE ENHANCEMENT MOE INTELLIFET MOSFET Features and Benefits Continuous rain Source Voltage 60V On-State Resistance 500mΩ Nominal Load
More informationGreen. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
More informationGreen. Part Number Compliance Case Packaging PDU Commercial PowerDI5 5,000/Tape & Reel
NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
More informationGreen SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationGreen. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationFeatures. Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DM SO-7 Standard BF ,000/Tape & Reel
2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationGreen. Bottom View. Top View. Part Number Compliance Case Packaging SDT3A45SA-13 Commercial SMA 5,000/Tape & Reel
Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationDSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
More informationGreen. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationX2-DFN Bottom View. Part Number Case Packaging BAT54LPS-7 X2-DFN ,000/Tape & Reel
.2 SUFCE MOUT SCHOTTKY BIE DIODE Features Mechanical Data Low Forward Voltage Drop Fast Switching Ultra-Small Leadless Surface Mount Package P Junction Guard ing for Transient and ESD Protection Totally
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationGreen. PowerDI123. Top View. Part Number Compliance Case Packaging DFLS260Q-7 Automotive PowerDI /Tape & Reel
Green 2.A SURFAE MOUNT SHOTTKY BARRIER RETIFIER POWERDI 123 Product Summary V R (V) I F (A) V F MAX (V) @ +25 I R MAX (ma) @ +25 6 2..62.1 Description and Applications This Schottky Barrier Rectifier has
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationBC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationLead-free Green. 200 ma LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description
Lead-free Green LMNB NEW PROUCT m LO SWITCH FETURING PRE-BISE PNP TRNSISTOR N N-MOSFET WITH PULL OWN RESISTOR General escription LMNB is best suited for applications where the load needs to be turned on
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationDZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42
3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
More informationZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
More informationPART OBSOLETE - USE ZXGD3111N7. Features. GND GND Vcc GATE. GATE Top View Pin-Out
PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationFeatures OUT R EXT. (Optional) OUT GND
LINEAR LED CONSTANT CURRENT REGULATOR IN SOT26 Description These Linear LED drivers are designed to meet the stringent requirements of automotive applications. The and BCR421U monolithically integrate
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationFMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
More informationTop View Device Symbol Top View Pin-Out
YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
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FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC
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