BC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
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1 45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A ontinuous ollector urrent I M = 1A Peak Pulse urrent omplementary PNP Types: B87-16 Ideally Suited for Automatic Insertion Epitaxial Planar Die onstruction For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AE-Q11 Standards for High Reliability PPAP apable (Note 4) ase: ase Material: Molded Plastic, Green Molding ompound; UL Flammability lassification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- STD-22, Method 28 Weight.8 grams (Approximate) Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 and 5) Part number ompliance Marking Reel size (inches) Tape width (mm) Quantity per reel B817-16Q-7-F Automotive K6A 7 8 3, B817-4Q-7-F Automotive K , B817-4Q-13-F Automotive K , Notes: 1. No purposely added lead. Fully EU Directive 22/95/E (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + l) and <ppm antimony compounds. 4. Automotive products are AE-Q11 qualified and are PPAP capable. Refer to 5. For packaging details, go to our website at Marking Information XXX = Product Type Marking ode (See table above) YM = Date ode Marking Y = Year ex: = 215 M = Month ex: 9 = September Date ode Key Year ode D E F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D 1 of 7
2 Absolute Maximum Ratings A = +25, unless otherwise specified.) haracteristic Symbol Value Unit ollector-base Voltage V BO 5 V ollector-emitter Voltage V EO 45 V Emitter-Base Voltage V EBO 5. V ollector urrent I.5 A Peak ollector urrent I M 1. A Peak Base urrent I BM 2 ma Thermal haracteristics (@T A = +25, unless otherwise specified.) haracteristic Symbol Value Unit Power Dissipation (Note 6) 31 P (Note 7) D 35 mw Thermal Resistance, Junction to Ambient (Note 6) 43 R (Note 7) θja 357 /W Thermal Resistance, Junction to Leads (Note 8) R θjl 35 /W Operating and Storage Temperature Range T J, T STG -65 to +15 ESD Ratings (Note 9) haracteristic Symbol Value Unit JEDE lass Electrostatic Discharge - Human Body Model ESD HBM 8, V 3B Electrostatic Discharge - Machine Model ESD MM 4 V Notes: 6. For a device mounted on minimum recommended pad layout FR4 PB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDE specification JESD22-A114 and JESD22-A of 7
3 Max Power Dissipation (W) Max Power Dissipation (W) Thermal Resistance ( o /W) Thermal haracteristics and Derating Information D= D=.2 D=.1 Single Pulse Temperature ( o ) Derating urve 5 D=.5 μµ 1m 1m m 1 1 1k Pulse Width (s) Transient Thermal Impedance 1 Single Pulse. T amb =25 o 1.1 1m m 1 1 1k Pulse Width (s) Pulse Power Dissipation 3 of 7
4 Electrical haracteristics A = +25, unless otherwise specified.) haracteristic Symbol Min Typ Max Unit Test ondition ollector-base Breakdown Voltage BV BO 5 V I = µa ollector-emitter Breakdown Voltage BV EO 45 V I = 1mA Emitter-Base Breakdown Voltage BV EBO 5 V I = µa ollector-emitter ut-off urrent I ES 5. na µa V E = 45V V E = 25V, T J = +15 Emitter-Base ut-off urrent I EBO na V EB = 5.V D urrent Gain (Note 1) B817-16Q 25 V B817-4Q 25 6 E = 1.V, I = ma h FE B817-16Q 6 V B817-4Q 17 E = 1.V, I = 3mA ollector-emitter Saturation Voltage (Note 1) V E(SAT).7 V I = 5mA, I B = 5mA Base-Emitter Voltage (Note 1) V BE 1.2 V V E = 1.V, I = 3mA Gain Bandwidth Product f T MHz V E = 5.V, I = 1mA, f = 5MHz ollector-base apacitance BO 12 pf V B = 1V, f = 1.MHz Note: 1. Measured under pulsed conditions. Pulse width 3µs. Duty cycle 2%. 4 of 7
5 f T, GAIN-BANDWIDTH PRODUT (MHz) h FE, D URRENT GAIN V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V) I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) Typical Electrical haracteristics (@T A = +25, unless otherwise specified.) V E, OLLETOR-EMITTER VOLTAGE (V) Figure 1 Typical ollector urrent vs. ollector-emitter Voltage 1 2 V E, OLLETOR-EMITTER VOLTAGE (V) Figure 2 Typical ollector urrent vs. ollector-emitter Voltage 1, V = 1V E I / I B = 1 T A = , I, OLLETOR URRENT (ma) Figure 3 Typical D urrent Gain vs. ollector urrent 1, , I, OLLETOR URRENT (ma) Figure 4 Typical ollector-emitter Saturation Voltage vs. ollector urrent , I, OLLETOR URRENT (ma) Figure 5 Gain-Bandwidth Product vs. ollector urrent 5 of 7
6 Package Outline Dimensions Please see for the latest version. K1 K B H A D J M L All 7 GAUGE PLANE.25 a L1 Dim Min Max Typ A B D F G H J K K L L M a 8 -- All Dimensions in mm F G Suggested Pad Layout Please see for the latest version. Y1 Y Dimensions Value (in mm) 2. X.8 X Y.9 Y1 2.9 X X1 6 of 7
7 IMPORTANT NOTIE DIODES INORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOUMENT, INLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERHANTABILITY AND FITNESS FOR A PARTIULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDITION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. opyright 216, Diodes Incorporated 7 of 7
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DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
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6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed
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YM Product Summary Device BV DSS R DS(ON) max Q N-Channel Q2 P-Channel Description 2V -2V I D max T A = +25 C 25mΩ @ V = 4.5V.A 3mΩ @ V = 3.3V 5.5A 32mΩ @ V = 2.5V 5.3A 8mΩ @ V = -4.5V -3.4A 9mΩ @ V =
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60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
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20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
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Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationGreen T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
More informationGreen. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel
YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationFeatures SO-7. Typical Configuration for Low-Side -ve Supply Rail DRAIN. Top View
V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationSBR5E45P5. Features and Benefits. Product Summary A = +25 C) Description and Applications. Mechanical Data. Ordering Information (Note 4)
Green 5A SBR SUPER BARRIER RECTIFIER Product Summary (@T A = +25 C) Features and Benefits ADVANCED NEW NEW INFORMATION V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) 45 5 0.6 0.28 Description and Applications
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationPART OBSOLETE - USE ZXGD3111N7. Features. GND GND Vcc GATE. GATE Top View Pin-Out
PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
More informationAL5801. Description. Pin Assignments. Features. Applications. Typical Applications Circuit 100V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER AL5801
AL581 1V, ADJUSTABLE URRENT SINK LINEAR LED DRIVER Description Pin Assignments The AL581 combines a 1V N-channel MOSFET with a prebiased NPN transistor to make a simple, small footprint LED driver. (Top
More informationNOT RECOMMENDED FOR NEW DESIGN USE DMN65D8L
NOT RECOMMENDED FOR NEW DESIGN USE DMN6D8L N7X N-CHNNEL ENHNCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS R DS(ON) max I D max T = + C 6V 6Ω @ V = V m Description This MOSFET has been
More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD65T50S1PT DGTD65T50S1 450 per Box in Tubes (Note 5)
650V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides excellent quality and high-switching performance. Features High-Speed Switching
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2005S8-13 DGD
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
More informationApplications. Tape and Reel Device Qualification Packaging AL5802LP4 Commercial X2-DFN ,000/Tape & Reel -7
Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
More informationGreen. Features. Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMTH10H005SCT TO220AB 50 Pieces/Tube
Green V +75 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) I D T C = +25 C V 5mΩ @V GS = V 4A BV DSS Description This new generation MOSFET features low on-resistance and fast switching,
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationGreen SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationC 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationDCX4710H. General Description. Features. Mechanical Data. Maximum Ratings: Total Device. 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
DX471H 1mA DUAL OMPLEMENTARY PRE-IASED TRANSISTORS General Description DX471H is est suited for applications where the load needs to e turned on and off using micro-controllers, comparators or other control
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3104N8TC ZXGD ,500
SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationAL5816Q. Description. Pin Assignments. Applications. Features VCC PWM GND AUTOMOTIVE COMPLIANT 60V LINEAR LED CONTROLLER AL5816Q
AUTOMOTIVE COMPLIANT 60V LINEAR LED CONTROLLER Description Pin Assignments The is a 5-terminal adjustable constant current linear LED controller offering excellent temperature stability and current (Top
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures and Benefits. Product Summary. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information D28V0H1U2P5Q
Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
More informationFeatures. Bottom View Equivalent Circuit. Top View Pin Out Configuration. Part Number Case Packaging DMN80H2D0SCTI ITO220AB (Type TH) 50 pieces/tube
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS R DS(ON) Package 8V Description.Ω@V GS = V ITOAB (Type TH) I D T C = +5 C This new generation MOSFET features low on-resistance and fast switching,
More informationGreen. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
More informationAN431. Pin Assignments. Description. Features. Applications. Typical Applications Circuit. A Product Line of. Diodes Incorporated
ADJUSTABLE PRECISION SHUNT REGULATORS Description The series ICs are three-terminal adjustable shunt regulators with guaranteed thermal stability over a full operation range. These ICs feature sharp turn-on
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationGreen. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max 3.8mΩ @ V GS = V 6mΩ @ V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state
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150mA ULTRA-LOW QUIESCENT CURRENT LDO with ENABLE Description The is a low dropout regulator with high output voltage accuracy. The includes a voltage reference, error amplifier, current limit circuit
More informationZXCT1009Q. Pin Assignments. Description. Features. Applications. Typical Application Circuit. A Product Line of. Diodes Incorporated
AUTOMOTIVE GRADE MICROPOWER CURRENT MONITOR Description The is a micropower high side current sense monitor. This device eliminates the need to disrupt the ground plane when sensing a load current. Pin
More informationFeatures -3.1A -2.0A. Pin Configuration
DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS =
More informationFeatures -4.1A. Part Number Case Packaging DMC3025LSD-13 SO-8 2,500/Tape & Reel
DM325LSD 3V OMPLEMENTRY ENHNEMENT MODE MOSFET DVNED INFORMTION Product Summary Device V (BR)DSS R DS(ON) max Package N-hannel 3V P-hannel -3V Description MX 2mΩ @ V GS = 1V 8.5 32mΩ @ V GS = 4.5V 7. SO-8
More information74LVC08A. Description. Pin Assignments. Features. Applications QUADRUPLE 2-INPUT AND GATES 74LVC08A. (Top View) Vcc 4B 4A 4Y 3B 3A 3Y
QUADRUPLE 2-INPUT AND GATES Description Pin Assignments The provides four independent 2-input AND gates. The device is designed for operation with a power supply range of 1.65V to 5.5V. The inputs are
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
More informationAP7384. Description. Pin Assignments. Features NEW PRODUCT. Applications. Typical Applications Circuit. WIDE INPUT VOLTAGE RANGE, 50mA ULDO REGULATOR
WIDE INPUT VOLTAGE RANGE, 50mA ULDO REGULATOR Description Pin Assignments The series is a positive voltage regulator IC. (Top View) The has features of wide input voltage range, high accuracy, low dropout
More informationZTL431AQ, ZTL431BQ ZTL432AQ, ZTL432BQ. Pin Assignments. Description. Features. Typical Application. Applications
AUTOMOTIVE COMPLIANT ADJUSTABLE PRECISION SHUNT REGULATOR Description The ZTL431AQ, ZTL431BQ, ZTL432AQ and ZTL432BQ are three terminal adjustable shunt regulators offering excellent temperature stability
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