BC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information

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1 45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A ontinuous ollector urrent I M = 1A Peak Pulse urrent omplementary PNP Types: B87-16 Ideally Suited for Automatic Insertion Epitaxial Planar Die onstruction For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AE-Q11 Standards for High Reliability PPAP apable (Note 4) ase: ase Material: Molded Plastic, Green Molding ompound; UL Flammability lassification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- STD-22, Method 28 Weight.8 grams (Approximate) Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 and 5) Part number ompliance Marking Reel size (inches) Tape width (mm) Quantity per reel B817-16Q-7-F Automotive K6A 7 8 3, B817-4Q-7-F Automotive K , B817-4Q-13-F Automotive K , Notes: 1. No purposely added lead. Fully EU Directive 22/95/E (RoHS) & 211/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<15ppm total Br + l) and <ppm antimony compounds. 4. Automotive products are AE-Q11 qualified and are PPAP capable. Refer to 5. For packaging details, go to our website at Marking Information XXX = Product Type Marking ode (See table above) YM = Date ode Marking Y = Year ex: = 215 M = Month ex: 9 = September Date ode Key Year ode D E F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D 1 of 7

2 Absolute Maximum Ratings A = +25, unless otherwise specified.) haracteristic Symbol Value Unit ollector-base Voltage V BO 5 V ollector-emitter Voltage V EO 45 V Emitter-Base Voltage V EBO 5. V ollector urrent I.5 A Peak ollector urrent I M 1. A Peak Base urrent I BM 2 ma Thermal haracteristics (@T A = +25, unless otherwise specified.) haracteristic Symbol Value Unit Power Dissipation (Note 6) 31 P (Note 7) D 35 mw Thermal Resistance, Junction to Ambient (Note 6) 43 R (Note 7) θja 357 /W Thermal Resistance, Junction to Leads (Note 8) R θjl 35 /W Operating and Storage Temperature Range T J, T STG -65 to +15 ESD Ratings (Note 9) haracteristic Symbol Value Unit JEDE lass Electrostatic Discharge - Human Body Model ESD HBM 8, V 3B Electrostatic Discharge - Machine Model ESD MM 4 V Notes: 6. For a device mounted on minimum recommended pad layout FR4 PB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDE specification JESD22-A114 and JESD22-A of 7

3 Max Power Dissipation (W) Max Power Dissipation (W) Thermal Resistance ( o /W) Thermal haracteristics and Derating Information D= D=.2 D=.1 Single Pulse Temperature ( o ) Derating urve 5 D=.5 μµ 1m 1m m 1 1 1k Pulse Width (s) Transient Thermal Impedance 1 Single Pulse. T amb =25 o 1.1 1m m 1 1 1k Pulse Width (s) Pulse Power Dissipation 3 of 7

4 Electrical haracteristics A = +25, unless otherwise specified.) haracteristic Symbol Min Typ Max Unit Test ondition ollector-base Breakdown Voltage BV BO 5 V I = µa ollector-emitter Breakdown Voltage BV EO 45 V I = 1mA Emitter-Base Breakdown Voltage BV EBO 5 V I = µa ollector-emitter ut-off urrent I ES 5. na µa V E = 45V V E = 25V, T J = +15 Emitter-Base ut-off urrent I EBO na V EB = 5.V D urrent Gain (Note 1) B817-16Q 25 V B817-4Q 25 6 E = 1.V, I = ma h FE B817-16Q 6 V B817-4Q 17 E = 1.V, I = 3mA ollector-emitter Saturation Voltage (Note 1) V E(SAT).7 V I = 5mA, I B = 5mA Base-Emitter Voltage (Note 1) V BE 1.2 V V E = 1.V, I = 3mA Gain Bandwidth Product f T MHz V E = 5.V, I = 1mA, f = 5MHz ollector-base apacitance BO 12 pf V B = 1V, f = 1.MHz Note: 1. Measured under pulsed conditions. Pulse width 3µs. Duty cycle 2%. 4 of 7

5 f T, GAIN-BANDWIDTH PRODUT (MHz) h FE, D URRENT GAIN V E(SAT), OLLETOR-EMITTER SATURATION VOLTAGE (V) I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) Typical Electrical haracteristics (@T A = +25, unless otherwise specified.) V E, OLLETOR-EMITTER VOLTAGE (V) Figure 1 Typical ollector urrent vs. ollector-emitter Voltage 1 2 V E, OLLETOR-EMITTER VOLTAGE (V) Figure 2 Typical ollector urrent vs. ollector-emitter Voltage 1, V = 1V E I / I B = 1 T A = , I, OLLETOR URRENT (ma) Figure 3 Typical D urrent Gain vs. ollector urrent 1, , I, OLLETOR URRENT (ma) Figure 4 Typical ollector-emitter Saturation Voltage vs. ollector urrent , I, OLLETOR URRENT (ma) Figure 5 Gain-Bandwidth Product vs. ollector urrent 5 of 7

6 Package Outline Dimensions Please see for the latest version. K1 K B H A D J M L All 7 GAUGE PLANE.25 a L1 Dim Min Max Typ A B D F G H J K K L L M a 8 -- All Dimensions in mm F G Suggested Pad Layout Please see for the latest version. Y1 Y Dimensions Value (in mm) 2. X.8 X Y.9 Y1 2.9 X X1 6 of 7

7 IMPORTANT NOTIE DIODES INORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOUMENT, INLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERHANTABILITY AND FITNESS FOR A PARTIULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDITION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any ustomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should ustomers purchase or use Diodes Incorporated products for any unintended or unauthorized application, ustomers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the hief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. ustomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, ustomers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. opyright 216, Diodes Incorporated 7 of 7

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