Green. Pin1. Top View Pin Configuration. Part Number Case Packaging DMTH3004LPS-13 POWERDI ,500/Tape & Reel
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1 NEW PROUCT AVANCE INFORMATION Product Summary BV SS 3V R S(ON) Max V GS = V V GS = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOSFET is designed to minimize the on-state resistance (R S(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Backlighting Power Management Functions C-C Converters Green 3V 75 C N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features and Benefits Low R S(ON) Minimizes On-State Losses Excellent Q gd x R S(ON) Product (FOM) Advanced Technology for C-C Converters Small Form Factor Thermally Efficient Package Enables Higher ensity End Products % Unclamped Inductive Switching Ensures More Reliability Lead-Free Finish; RoHS Compliant (Notes & 2) Halogen and Antimony Free. Green evice (Note 3) Qualified to AEC-Q Standards for High Reliability An Automotive-Compliant Part is Available Under Separate atasheet (Q) Mechanical ata Case: POWERI 56-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-ST-2 Terminal Connections Indicator: See iagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-ST-22, Method 28 Weight:.97 grams (Approximate) PowerI 56-8 Pin S S S G Top View Bottom View Internal Schematic Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging -3 POWERI ,5/Tape & Reel Notes:. EU irective 22/95/EC (RoHS) & 2/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See for more information about iodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at Marking Information H34LS YY WW = Manufacturer s Marking H34LS = Product Type Marking Code YYWW = ate Code Marking YY = Year (ex: 5 = 25) WW = Week ( to 53) S S S G of 7 ecember 25 iodes Incorporated
2 NEW PROUCT AVANCE INFORMATION Maximum Ratings A = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit rain-source Voltage V SS 3 V Gate-Source Voltage V GSS +2-6 V Continuous rain Current, V GS = V (Note 5) T A = +25 C 22 I T A = +7 C 8 A Continuous rain Current, V GS = V T C = +25 C 45 I T C = +7 C 2 A Maximum Continuous Body iode Forward Current (Note 5) I S 3 A Pulsed rain Current (µs Pulse, uty Cycle = %) I M 8 A Avalanche Current, L=.3mH I AS 27 A Avalanche Energy, L=.3mH E AS mj Thermal Characteristics Characteristic Symbol Value Unit T A = +25 C 3.2 Total Power issipation (Note 5) P W T C = +25 C 36 Thermal Resistance, Junction to Ambient (Note 5) Steady State R θja 47 C/W Thermal Resistance, Junction to Case R θjc. Operating and Storage Temperature Range T J, T STG -55 to +75 C Electrical Characteristics (@T A = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) rain-source Breakdown Voltage BV SS 3 V V GS = V, I = 25μA Zero Gate Voltage rain Current I SS μa V S = 24V, V GS = V V Gate-Source Leakage I GSS ± na GS = +2V, V S = V V GS = -6V, V S = V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V GS(TH) 3 V V S = V GS, I = 25μA V GS = V, I = 2A Static rain-source On-Resistance R S(ON) mω 5 6 V GS = 4.5V, I = 7A iode Forward Voltage V S.7 V V GS = V, I S = A YNAMIC CHARACTERISTICS (Note 7) Input Capacitance C iss 237 V pf S = 5V, V GS = V, Output Capacitance C oss 36 f = MHz Reverse Transfer Capacitance C rss 24 Gate Resistance R g.7 Ω V S = V, V GS = V, f = MHz Total Gate Charge (V GS = V) Q g 43.7 Gate-Source Charge Q gs 6.9 nc V S = 5V, I = 2A Gate-rain Charge Q gd 8 Turn-On elay Time t (ON) 6.2 Turn-On Rise Time t R 4.2 V ns = 5V, V GS = V, Turn-Off elay Time t (OFF) 2 R G = 3Ω, R L =.75Ω Turn-Off Fall Time t F 8 Body iode Reverse Recovery Time t RR 25 ns I F = 5A, di/dt = 5A/μs Body iode Reverse Recovery Charge Q RR 37 nc Notes: 5. R θja is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with in. square copper plate. R θjc is guaranteed by design while R θja is determined by the user s board design. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 ecember 25 iodes Incorporated
3 R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (NORMALIZE) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) R S(ON), RAIN-SOURCE ON-RESISTANCE (Ω) NEW PROUCT AVANCE INFORMATION I, RAIN CURRENT (A) I, RAIN CURRENT (A) V GS =.V V GS = 4.5V V GS = 4.V V GS = 3.5V V GS = 3.V V S = 5V V GS = 2.8V V GS = 2.2V V GS = 2.5V V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic V GS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic.6..5 V GS = 4.5V V GS = V I = 2A I, RAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. rain Current and Gate Voltage V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.6 V GS = V V GS = V, I = 2A V GS = 4.5V, I = 5A I, RAIN CURRENT (A) Figure 5. Typical On-Resistance vs. rain Current and Junction Temperature T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Junction Temperature 3 of 7 ecember 25 iodes Incorporated
4 V GS (V) I, RAIN CURRENT (A) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) NEW PROUCT AVANCE INFORMATION R S(ON), RAIN-SOURCE ON-ESISTANCE (Ω) V GS(TH), GATE THRESHOL VOLTAGE (V) V GS = 4.5V, I = 5A 2.5 I = ma.5.4 I = 25μA.3 V GS = V, I = 2A V GS = V T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Junction Temperature T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs. Junction Temperature f=mhz C iss 5 C oss 5 T J = 25 o C T J = 5 o C T J = 85 o C T J = 25 o C C rss T J = 75 o C T J = -55 o C V S, SOURCE-RAIN VOLTAGE (V) Figure 9. iode Forward Voltage vs. Current V S, RAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R S(ON) Limited P W =ms P W =µs V S = 5V, I = 2A Q g (nc) Figure. Gate Charge. P W =ms P W =ms T J(Max) = 75 T C = 25 Single Pulse UT on Infinite Heatsink V GS = V P W =s P W =s C. V S, RAIN-SOURCE VOLTAGE (V) Figure 2. SOA, Safe Operation Area 4 of 7 ecember 25 iodes Incorporated
5 NEW PROUCT AVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE. =.7 =.5 =.3 =. =.9 =.5. =.2. =Single Pulse =. =.5 E-6 E t, PULSE URATION TIME (sec) Figure 3. Transient Thermal Resistance R θjc (t) = r(t) * R θjc R θjc =.8 /W uty Cycle, = t / t2 5 of 7 ecember 25 iodes Incorporated
6 NEW PROUCT AVANCE INFORMATION Package Outline imensions Please see AP22 at for the latest version. POWERI 56-8 E E A etail A etail A (4X) c A e (4X) b (8X) e/2 L b2 (4X) 3 K E3 2 E2 b3 (4X) M M G L POWERI 56-8 im Min Max Typ A.9.. A..5 b b b c BSC E 6.5 BSC E E E e.27 BSC G K.5 L L M M..4.2 θ 2 θ All imensions in mm Suggested Pad Layout Please see AP2 at for the latest version. POWERI 56-8 Y3 Y5 Y7 Y6 Y4 C X X4 X3 X2 G Y2 Y imensions Value (in mm) C.27 G.66 G.82 X.6 X 4. X2.755 X X4 5.6 Y.27 Y.6 Y2.2 Y3.295 Y4.825 Y5 3.8 Y6.8 Y7 6.6 X G Y(4x) 6 of 7 ecember 25 iodes Incorporated
7 NEW PROUCT AVANCE INFORMATION IMPORTANT NOTICE IOES INCORPORATE MAKES NO WARRANTY OF ANY KIN, EXPRESS OR IMPLIE, WITH REGARS TO THIS OCUMENT, INCLUING, BUT NOT LIMITE TO, THE IMPLIE WARRANTIES OF MERCHANTABILITY AN FITNESS FOR A PARTICULAR PURPOSE (AN THEIR EQUIVALENTS UNER THE LAWS OF ANY JURISICTION). iodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. iodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does iodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on iodes Incorporated website, harmless against all damages. iodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use iodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold iodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by iodes Incorporated. LIFE SUPPORT iodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of iodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which:. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of iodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by iodes Incorporated. Further, Customers must fully indemnify iodes Incorporated and its representatives against any damages arising out of the use of iodes Incorporated products in such safety-critical, life support devices or systems. Copyright 25, iodes Incorporated 7 of 7 ecember 25 iodes Incorporated
8 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: iodes Incorporated: -3
Green. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
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60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
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YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
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20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
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40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
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N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V (BR)DSS 2V Description R DS(ON) max 25mΩ @ V GS = 4.5V I D max T A = +25 C 9A 29mΩ @ V GS = 2.5V 5.5A 37mΩ @ V GS = 1.8V 4.8A This MOSFET is
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1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V RRM (V) I O (A) V F(MAX) (V) @ +25 C I R(MAX) (µa) @ +25 C 80 1 0.80 5 Description and Applications Features and Benefits Low Forward Voltage
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SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Ultra-Small Surface Mount Package Low Forward Voltage Drop Fast Switching PN Junction Guard Ring for Transient and ESD Protection Totally Lead-Free
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DVNCE INFORMTION DVNCED INFORMTION Product Summary V (BR)DSS 6V R DS(ON) Max 2mΩ @ V = V 4mΩ @ V = 4.V I D Max T C = +2 C 32 2 6V 7 C DUL N-CHNNEL ENHNCEMENT MODE MOSFET PowerDI Features and Benefits Rated
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Green 3A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa),000 3.0 5 Features and Benefits Glass Passivated Die Construction Miniature Package
More informationADC114YUQ. Mechanical Data. Features. Ordering Information (Notes 4 & 5) Marking Information NXX 1Y7 YM NXX YM
NXX YM NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Built-In Biasing Resistors Totally Lead-Free & Fully RoHS Compliant (Notes &
More informationFeatures. Gate. G C E Emitter. Product Marking Quantity DGTD120T25S1PT DGTD120T25S1 450 per Box in Tubes (Note 5)
1200V FIELD STOP IGBT IN TO-247 Description The is produced using advanced Field Stop Trench IGBT Technology, which provides low V CE(sat), excellent quality and high-switching performance. Features High
More informationApplications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000
YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R
More informationGreen. Part Number Qualification Case Packaging P4SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel
Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Excellent Clamping
More informationNOT RECOMMENDED FOR NEW DESIGN USE DMN65D8L
NOT RECOMMENDED FOR NEW DESIGN USE DMN6D8L N7X N-CHNNEL ENHNCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS R DS(ON) max I D max T = + C 6V 6Ω @ V = V m Description This MOSFET has been
More informationRDBF31-RDBF310. Product Summary A = +25 C) Features and Benefits ADVANCED INFORMATION NEW PRODUCT. Description and Applications.
Green 3.0A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V FM (V) I R (μa) 00,800,600, 400,200,0 3.0.3 5 Description and Applications Suitable for
More informationFeatures. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
More informationGreen. Features DO-214AC
Green SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 3 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationDevice Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
More informationZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge
A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A
More informationFeatures. Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DGD2101MS8-13 DGD ,500
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 (Type TH) Description The is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage
More informationPART OBSOLETE - NO ALTERNATE PART Green. Features DO-214AA
Green LOW VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 5 0.55 0.1 Description Low voltage Schottky rectifier suited for switch mode
More informationFeatures DO-41 DO-15 DO-214AC
SCHOTTKY BARRIER RECTIFIERS Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 60 2 0.68 0.5 Description The is a low voltage dual Schottky rectifier suited for switch mode
More informationFeatures DO-15 DO-214AC SOD-123
SCHOTTKY BARRIER RECTIFIERS Product Summary Features V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 40 2 0.5 0.5 Description The is a low voltage dual Schottky rectifier suited for switch
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD2304S8-13 DGD ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description Features The is a high voltage / high speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing
More informationZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET
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More informationCase Material: Molded Plastic, Green Molding Compound; Low Leakage Current. UL Flammability Classification Rating 94V-0 Low Capacitance
DVNCED INFORMTION SURFCE MOUNT SWITCHING DIODE RRY Features Mechanical Data Fast Switching Speed Case: High Reverse Breakdown Voltage Case Material: Molded Plastic, Green Molding Compound; Low Leakage
More informationDGD Ordering Information (Note 4) Marking Information YYWW DGD05473 HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN W-DFN3030-10 Description The is a high-frequency gate driver capable of driving N- channel MOSFETs. The floating high-side driver is rated up to 50V.
More informationFeatures. TO-220F-3 (Option 1) TO (2) TO TO (1)
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary Features V F (MAX) (V) I R (MAX) (ma) V RRM (V) I O (A) @ +25 C @ +25 C 200 2x5 0.95 0.5 Description High voltage dual Schottky rectifier suited for
More informationFeatures. Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel DGD2103MS8-13 DGD2103M ,500
HALF-BRIDGE GATE DRIVER IN SO-8 Description The is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques
More informationFeatures TO-220F-3 TO (2) TO-263-2
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Product Summary V RRM (V) I O (A) V F (MAX) (V) I R (MAX) (ma) @ +25 C @ +25 C 100 2x10 0.85 0.1 Description High voltage dual Schottky rectifier suited for switch
More informationDGD Features. Description. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information YYWW DGD05463
HIGH FREQUENCY HALF-BRIDGE GATE DRIVER WITH PROGRAMMABLE DEADTIME IN W-DFN3030-10 (Type TH) Description The is a high-frequency half-bridge gate driver capable of driving N-channel MOSFETs in a half-bridge
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DGD21844S14-13 DGD ,500
HALF- BRIDGE GATE DRIVER IN SO-14 Description The is a high voltage / high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques
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HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description The is a mid-voltage/high-speed gate driver capable of driving N-channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques
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More informationFeatures and Benefits. Product Summary. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information D28V0H1U2P5Q
Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
More informationGreen SMC. Top View Bottom View. Part Number Compliance Case Packaging B5X0CQ-13-F Automotive SMC 3,000/Tape & Reel
Green 5. SURFCE MOUNT SCHOTTKY BRRIER RECTIFIER Product Summary B52CQ/B53CQ/B54CQ V RRM (V) I O () V F Max (V) I R Max (m) 2/3/4 5..55.5 B55CQ/B56CQ V RRM (V) I O () V F Max (V) I R Max (m) 5/6 5..7.5
More informationFeatures. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
More informationGreen D-FLAT. Top View. Part Number Compliance Case Packaging RS1MDFQ-13 Automotive D-FLAT 10,000/Tape & Reel
DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
More informationFeatures DNC GND GND GND GATE GATE. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3108N8TC ZXGD ,500
V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Description is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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PART OBSOLETE - USE N7 V ACTIVE OR-ING MOSFET CONTROLLER IN SO8 Description is a V Active OR-ing MOSFET controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces
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Green 20 TRENCH SCHOTTKY RECTIFIER Product Summary (Per Leg) V V RRM (V) I O () F Max (V) I R Max (µ) @ +25 C @ +25 C 0 0.80 0 Description and pplications Features Low Forward Voltage Drop Excellent High
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A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
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DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
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DVNCED NEW INFORMTION Green. SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (μ),.3 5 Description and pplications Features and Benefits Glass Passivated
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P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationFeatures. Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXGD3104N8TC ZXGD ,500
SYNCHRONOUS MOSFET CONTROLLER IN SO8 Description The ZXGD3104 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and
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V ACTIVE OR'ING MOSFET CONTROLLER IN SO7 Description The is a V Active OR ing MOSFET Controller designed for driving a very low R DS(ON) Power MOSFET as an ideal diode. This replaces the standard rectifier
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
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2-CHANNEL LOW CAPACITANCE ESD PROTECTION ARRAY Product Summary V F (Typ) V P (Typ) C OUT (Typ) 0.8V 5V 1.5pF Description is a high-performance device suitable for protecting two high-speed channels. This
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Green 1.0A HIGH VOLTAGE SHOTTKY BARRIER RETIFIER Product Summary (@+25 ) B170BQ B180BQ B190BQ 70 1.0 0.79 0.5 80 1.0 0.79 0.5 90 1.0 0.79 0.5 B10BQ 0 1.0 0.79 0.5 Features and Benefits Guard Ring Die onstruction
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Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
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AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
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reen B370BE-B3100BE 3.0A SHOTTKY BARRIER RETIFIER Product Summary Device V RRM (V) I O (A) V F Max (V) I R Max (ma) @ +25 @ +25 B370BE/E 70 3.0 0.79 0.10 B380BE/E 80 3.0 0.79 0.15 B390BE/E 90 3.0 0.79
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