ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18 ; ID=1.7A SOT23

Transcription

1 ZXM6N2F 2V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=2V; RDS(ON)=.8 ; ID=.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM6N2FTA 7 8mm embossed 3 units Top View ZXM6N2FTC 3 8mm embossed units DEVICE MARKING N2 ISSUE - JUNE 24

2 ZXM6N2F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 2 V Gate Source Voltage V GS ± 2 V Continuous Drain Current (V GS =4.5V; T A =25 C)(b) I D.7 A (V GS =4.5V; T A =7 C)(b).3 Pulsed Drain Current (c) I DM 7.4 A Continuous Source Current (Body Diode) (b) I S.8 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A =25 C (a) Linear Derating Factor Power Dissipation at T A =25 C (b) Linear Derating Factor P D P D mw mw/ C mw mw/ C Operating and Storage Temperature Range T j :T stg -55 to +5 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 2 C/W Junction to Ambient (b) R θja 55 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE - JUNE 24 2

3 ZXM6N2F CHARACTERISTICS m DC s ms ms ms us Refer Note (a) m. Safe Operating Area Max Power Dissipation (Watts) Refer Note (b) Refer Note (a) T - Temperature ( C) Derating Curve Thermal Resistance ( C/W) D=.5 D=.2 Refer Note (b) 2 D=. D=.5 Single Pulse.... Pulse Width (s) Transient Thermal Impedance Thermal Resistance ( C/W) 24 Refer Note (a) D= D=.2 D=. Single Pulse D= Pulse Width (s) Transient Thermal Impedance ISSUE - JUNE 24 3

4 ZXM6N2F ELECTRICAL CHARACTERISTICS (at TA = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 2 V I D =25µA, V GS =V Zero Gate Voltage Drain Current I DSS µa V DS =2V, V GS =V Gate-Body Leakage I GSS na V GS =± 2V, V DS =V Gate-Source Threshold Voltage V GS(th).7 V I D =25µA, V DS = V GS Static Drain-Source On-State Resistance () R DS(on).8.24 Ω Ω V GS =4.5V, I D =.93A V GS =2.7V, I D =.47A Forward Transconductance (3) g fs.3 S V DS =V,I D =.47A DYNAMIC (3) Input Capacitance C iss 6 pf Output Capacitance C oss 5 pf Reverse Transfer Capacitance C rss 3 pf V DS =5 V, V GS =V, f=mhz SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.4 ns Rise Time t r 4.2 ns Turn-Off Delay Time t d(off) 7.8 ns Fall Time t f 4.2 ns Total Gate Charge Q g 3.4 nc Gate-Source Charge Q gs.4 nc Gate-Drain Charge Q gd.8 nc V DD =V, I D =.93A R G =6.2Ω, R D =Ω (refer to test circuit) V DS =6V,V GS =4.5V, I D =.93A (refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage () V SD.95 V T J =25 C, I S =.93A, V GS =V Reverse Recovery Time (3) t rr 2.9 ns T J =25 C, I F =.93A, di/dt= A/µs Reverse Recovery Charge (3) Q rr 5.2 nc NOTES () Measured under pulsed conditions. Width 3µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE - JUNE 24 4

5 ZXM6N2F TYPICAL CHARACTERISTICS +25 C VGS +5 C VGS m 6V 4V 3V 2.5V 2V.5V m 6V 4V 3.5V 3V 2.5V 2V.5V m. Output Characteristics m. Output Characteristics. VDS=V T=5 C T=25 C VGS=VDS ID=25µA TJ- Junction Temperature ( C) VGS - Gate-Source Voltage (V) Transfer Characteristics Normalised RDS(on) and VGS(th) VGS(th) RDS(on) VGS=4.5V ID=.93A Normalised RDS(on) and VGS(th) v Temperature 2 RDS(on) - Drain Source On Resistance (Ω).. VGS=2.7V VGS=4.5V On-Resistance v Drain Current ISD - Reverse Drain Current (A) m m m T=5 C T=25 C µ VSD - Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ISSUE - JUNE 24 5

6 ZXM6N2F TYPICAL CHARACTERISTICS C - Capacitance (pf) Ciss Coss Crss VGS=V f=mhz. 2 3 Capacitance v Drain-Source Voltage VGS - Gate Source Voltage (V) ID=.93A VDS=6V Q - Charge (nc) Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ISSUE - JUNE 24 6

7 N ZXM6N2F PACKAGE DIMENSIONS PAD LAYOUT DETAILS DIM Millimetres Inches Min Max Min Max A B C..43 D F G NOM.9 NOM.75 K L N NOM.95 NOM.37 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44) (Sales), (44) (General Enquiries) Fax: (44) Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 9 47 Mall Drive, Unit 4 35 Metroplaza, Tower 2 agents and distributors in D-8673 München Commack NY 725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 999 Telefon: (49) Telephone: (56) Telephone:(852) 26 6 Fax: (49) Fax: (56) Fax: (852) Internet: This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE - JUNE 24 7