P-channel -30 V, 48 mω typ., -2 A STripFET H6 Power MOSFET in a SOT-23. Order code V DS R DS(on) max. I D

Transcription

1 Datasheet Pchannel 30 V, 48 mω typ., 2 A STripFET H6 Power MOSFET in a SOT23 package 3 Features Order code V DS R DS(on) max. I D 1 SOT23 2 STR2P3LLH6 30 V 56 mω 2 A Very low onresistance Very low gate charge High avalanche ruggedness Low gate drive power loss D (3) Applications Switching applications G (1) S (2) PG1D3S2 Description This device is a Pchannel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R DS(on) in all packages. Product status STR2P3LLH6 Product summary Order code Marking Package Packing STR2P3LLH6 2K3L SOT23 Tape and reel DS9647 Rev 4 February 2018 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage 30 V V GS Gatesource voltage ± 20 V I D Drain current (continuous) at T pcb = 25 C 2 A I D Drain current (continuous) at T pcb = 100 C 1.2 A I (1) DM Drain current (pulsed) 8 A P TOT Total dissipation at T pcb = 25 C 0.35 W T J Operating junction temperature range C 55 to 150 T stg Storage temperature range C 1. Pulse width limited by safe operating area Table 2. Thermal resistance Symbol Parameter Value Unit R (1) thjpcb Thermal resistance junctionpcb, single operation 357 C/W 1. When mounted on FR4 board of 1inch², 2oz Cu, t < 10 s DS9647 Rev 4 page 2/13

3 Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified). Table 3. On /off states Symbol Parameter Test conditions Min Typ Max Unit V (BR)DSS I DSS Drainsource breakdown voltage Zero gate voltage drain current V GS = 0 V, I D = 250 µa 30 V V GS = 0 V, V DS = 30 V, T J = 125 C (1) 1 µa I GSS Gate body leakage current V GS = 0 V, V GS = ±20 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drainsource onresistance V GS = 10 V, I D = 1 A V GS = 4.5 V, I D = 1 A mω 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Min Typ Max Unit C iss Input capacitance 639 C oss Output capacitance V DS = 25 V, f=1 MHz V GS = 0 V 79 C rss Reverse transfer capacitance 52 Q g Total gate charge V DD = 15 V, I D = 2 A 6 Q gs Gatesource charge V GS = 4.5 to 0 V 1.9 Q gd Gatedrain charge (see Figure 13. Gate charge test circuit) 2.1 pf nc Table 5. Switching times Symbol Parameter Test conditions Min Typ Max Unit t d(on) t r t d (off) t f Turnon delay time Rise time Turnoff delay time Fall time V DD = 15 V, I D = 2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 12. Switching times test circuit for resistive load) ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit V SD (1) Forward on voltage I SD = 2 A, V GS = 0 V 1.1 V DS9647 Rev 4 page 3/13

4 Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery time I SD = 2 A, Q rr Reverse recovery charge di/dt = 100 A/µs, 3.5 nc V DD = 24 V, T J = 150 C 11.2 ns I RRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode 0.6 A recovery times) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% DS9647 Rev 4 page 4/13

5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Note: For the Pchannel Power MOSFET, current and voltage polarities are reversed. Figure 1. Safe operating area Figure 2. Thermal impedance K δ= GIPD FSR Zth=k*Rthjpcb δ=tp/t 10 4 Single pulse tp(s) tp t Figure 3. Output characteristics Figure 4. Transfer characteristics ID (A) GIPG FSR ID (A) GIPG FSR VGS= 10V 9V 8V 7V 6V 5V 4V VDS= 7V VDS(V) VGS(V) DS9647 Rev 4 page 5/13

6 Electrical characteristics (curves) Figure 5. Gate charge vs gatesource voltage Figure 6. Static drainsource onresistance VGS (V) 12 VDD = 15 V ID = 2 A 10 GIPG FSR RDS(on) (mω) 55 VGS= 10V GIPG FSR Qg(nC) ID(A) Figure 7. Normalized V (BR)DSS vs temperature Figure 8. Capacitance variations V (BR)DSS (norm) 1.08 I D = 1 ma GIPG MT C (pf) 800 GIPD FSR Ciss TJ ( C) Coss Crss VDS(V) Figure 9. Normalized gate threshold voltage vs. temperature V GS(th) (norm) I D = 250 µa GIPG MT TJ( C) Figure 10. Normalized onresistance vs. temperature GIPG MT R DS(on) (norm) 1.6 V GS = 10 V TJ( C) DS9647 Rev 4 page 6/13

7 Electrical characteristics (curves) Figure 11. Sourcedrain diode forward characteristics V SD (V) 0.9 Tj = 55 C GIPD FSR 0.8 Tj = 25 C Tj = 150 C ISD(A) DS9647 Rev 4 page 7/13

8 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9647 Rev 4 page 8/13

9 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 SOT23 package information Figure 15. SOT23 package outline _998G_3 DS9647 Rev 4 page 9/13

10 SOT23 package information Table 7. SOT23 package mechanical data Dim. mm Min. Typ. Max. A 1.25 A A A b b c c D E E e e L L1 L REF 0.25 BSC R 0.05 R θ 0 8 θ θ Figure 16. SOT23 recommended footprint (dimensions are in mm) DS9647 Rev 4 page 10/13

11 Revision history Table 8. Document revision history Date Revision Changes 09May Initial release. 03Nov Nov Feb Document status promoted from preliminary to production data. Added Section 2.1: "Electrical characteristics (curves)". Minor text changes. Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings", Table 4: "On /off states", Table 5: "Dynamic", Table 6: "Switching times", Table 7: "Source drain diode" and Section 2.1: "Electrical characteristics (curves)". Minor text changes. Removed maturity status indication from cover page. The document status is production data. Updated Section 4.1 SOT23 package information. Minor text changes. DS9647 Rev 4 page 11/13

12 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information SOT23 package information...9 Revision history...11 Contents...12 Disclaimer...13 DS9647 Rev 4 page 12/13

13 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DS9647 Rev 4 page 13/13