STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
|
|
|
- Doris Richards
- 6 years ago
- Views:
Transcription
1 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet - production data Order code V J max. R DS(on) max. I D P TOT DPAK TO-220FP STD10NM60N STF10NM60N STP10NM60N STU10NM60N 650 V 0.55 Ω 10 A 70 W 25 W 70 W TO-220 IPAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packing STD10NM60N 10NM60N DPAK Tape and reel STF10NM60N 10NM60N TO-220FP Tube STP10NM60N 10NM60N TO-220 Tube STU10NM60N 10NM60N IPAK Tube December 2015 DocID Rev 1 1/28 This is information on a product in full production.
2 Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information STD10NM60N, DPAK (TO-252) package information STF10NM60N, TO-220FP package information STP10NM60N, TO-220 package information STU10NM60N, IPAK (TO-251) Packing information Revision history /28 DocID Rev 1
3 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO-220 TO-220FP IPAK DPAK Unit V GS Gate- source voltage ± 25 V I D Drain current (continuous) at T C = 25 C (1) 10 A I D Drain current (continuous) at T C = 100 C 5 5 (1) 5 A I (2) DM Drain current (pulsed) (1) 32 A P TOT Total dissipation at T C = 25 C W dv/dt (3) Peak diode recovery voltage slope 15 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t =1 s; T C = 25 C) T J Operating junction temperature T stg Storage temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 10 A, di/dt 400 A/µs, V DS peak V (BR)DSS, V DD = 80% V (BR)DSS V - 55 to 150 C Symbol Table 3. Thermal data Value Parameter TO-220 TO-220FP IPAK DPAK Unit R thj-case Thermal resistance junction-case max C/W R thj-amb Thermal resistance junction-ambient max C/W R thj-pcb Thermal resistance junction-pcb max. 50 C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS EAS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max.) Single pulse avalanche energy (starting T J = 25 C, ID = IAS, VDD = 50 V) 4 A 200 mj DocID Rev 1 3/28 28
4 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 5. On/off-states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero-gate voltage drain current (V GS = 0) I D = 1 ma, V GS = I D = 1 ma, V GS = 0, T C = 150 C 650 V DS = 600 V 1 V DS = 600 V, T C = 125 C 100 Gate-body leakage I GSS V current (V DS = 0) GS = ± 25 V ± 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V Static drain-source onresistance GS = 10 V, I D = 4 A R DS(on) V Ω V µa Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 50 V, f = 1 MHz, pf C rss V GS = 0 Reverse transfer capacitance pf C oss eq (1) Equivalent capacitance time related V DS = 0 to 480 V, V GS = pf R g Gate input resistance f=1 MHz open drain Ω Q g Total gate charge V DD = 480 V, I D = 8 A, nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 17) nc 1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS. 4/28 DocID Rev 1
5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns V DD = 300 V, I D = 4 A, t r Rise time ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off-delay time (see Figure 16) ns t f Fall time ns Table 8. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 8 (1) I SDM Source-drain current (pulsed) 32 A V (2) SD Forward on voltage I SD = 8 A, V GS = V t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V µc I RRM Reverse recovery current (see Figure 18) 17 A t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V T J = 150 C 2.6 µc I RRM Reverse recovery current (see Figure 18) 16.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID Rev 1 5/28 28
6 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK 6/28 DocID Rev 1
7 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized V DS vs. temperature Figure 12. Gate charge vs. gate-source voltage Figure 11. Static drain-source on-resistance Figure 13. Capacitance variations DocID Rev 1 7/28 28
8 Electrical characteristics STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 14. Normalized gate threshold voltage vs. temperature Figure 15. Normalized on-resistance vs. temperature 8/28 DocID Rev 1
9 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Test circuits 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform DocID Rev 1 9/28 28
10 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 STD10NM60N, DPAK (TO-252) package information Figure 22. DPAK (TO-252) type A package outline 10/28 DocID Rev 1
11 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e e H L (L1) L L R 0.20 V2 0 8 DocID Rev 1 11/28 28
12 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 23. DPAK (TO-252) type C2 outline 12/28 DocID Rev 1
13 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 10. DPAK (TO-252) type C2 package mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e H L (L1) 2.90 REF L L BSC L L BSC Ɵ Ɵ V2 0 8 DocID Rev 1 13/28 28
14 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 24. DPAK (TO-252) type E package outline 14/28 DocID Rev 1
15 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Table 11. DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e e H L L L L DocID Rev 1 15/28 28
16 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 25. DPAK (TO-252) type A, C2, E recommended footprint (a) a. All dimensions are in millimeters 16/28 DocID Rev 1
17 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information 4.2 STF10NM60N, TO-220FP package information Figure 26. TO-220FP package outline DocID Rev 1 17/28 28
18 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 12. TO-220FP package mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia /28 DocID Rev 1
19 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information 4.3 STP10NM60N, TO-220 package information Figure 27. TO-220 type A package outline DocID Rev 1 19/28 28
20 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 13. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L øp Q /28 DocID Rev 1
21 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information 4.4 STU10NM60N, IPAK (TO-251) Figure 28. IPAK (TO-251) type A outline DocID Rev 1 21/28 28
22 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 14. IPAK (TO-251) type A mechanical data Dim. mm Min. Typ. Max. A A b b b B c c D E e 2.28 e H L L L V /28 DocID Rev 1
23 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Package information Figure 29. IPAK (TO-251) type C package outline DocID Rev 1 23/28 28
24 Package information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Table 15. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A A b b b c c D D E E e e H L L L Ɵ Ɵ /28 DocID Rev 1
25 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Packing information 5 Packing information Figure 30. Tape for DPAK (TO-252) DocID Rev 1 25/28 28
26 Packing information STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Figure 31. Reel for DPAK (TO-252) Table 16. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base quantity 2500 P Bulk quantity 2500 P R 40 T W /28 DocID Rev 1
27 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Revision history 6 Revision history Table 17. Document revision history Date Revision Changes 04-Dec First release. Part numbers previously included in the datasheet with DocID DocID Rev 1 27/28 28
28 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 28/28 DocID Rev 1
STD7NM60N, STF7NM60N, STU7NM60N
Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD7NM60N STF7NM60N 600 V 0.9 Ω 5 A DPAK TO-220FP
Features. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF27N60M2-EP 27N60M2EP TO-220FP Tube
N-channel 600 V, 0.150 Ω typ., 20 A MDmesh M2 EP Power MOSFET in TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max I D 600 V 0.163 Ω 20 A TO-220FP Figure 1: Internal schematic
Features. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube
N- Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STWA70N60DM2 600 V 66 A 446 W 3 2 1 TO-247 long leads Figure 1: Internal schematic
Features. Description. AM15572v1. Table 1. Device summary. Order codes Marking Package Packaging. STD13N65M2 13N65M2 DPAK Tape and reel
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
STF12N120K5, STFW12N120K5
STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages TAB Features TAB IPAK 3 1 2 TAB 2 3 1 DPAK TO-220FP
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF7LN80K5 7LN80K5 TO-220FP Tube
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF7LN80K5 800 V 1.15 Ω 5 A 3 1 2 TO-220FP Figure 1:
Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
STB22NM60N, STF22NM60N, STP22NM60N
Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
1 Electrical ratings Electrical characteristics Electrical characteristics (curves)... 6
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP35N60DM2 600 V 0.110 Ω 28 A 210 W Figure
Obsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
Features. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
STF14N80K5, STFI14N80K5
STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code V DS R DS(on) max. I D STF14N80K5 STFI14N80K5
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW40N65M2 40N65M2 TO-247 Tube
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D STW40N65M2 650 V 0.099 Ω 32 A TO-247 1 3 2 Extremely
Order code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode
Features. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube
N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
Features. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
Features. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data Order code V DS R DS(on) max I D TAB DPAK 1 3 STD12N50M2 500 V 0.38 Ω 10 A Extremely low
Features. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel
N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
Order code V DS R DS(on) max I D
Datasheet N-channel 6 V,.23 Ω typ., 13 A, MDmesh M2 EP Power MOSFET in a TO-22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on) max I D STF2N6M2-EP 6 V.278 Ω 13 A Extremely low gate charge
STD12N65M2. N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package. Features. Applications. Description DPAK (TO-252)
N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on)max. I D 650 V 0.5 Ω 8 A DPAK (TO-252) Extremely low gate charge
Order code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses
Order code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package Features TO-247 1 3 2 Order code V DS @ T Jmax R DS(on) max. I D STW25N60M2-EP 650 V 0.188 Ω 18 A Extremely low
Order code V DS R DS(on ) max. I D
Datasheet N-channel 9 V,.21 Ω typ., 2 A MDmesh K5 Power MOSFET in a TO 22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on ) max. I D STF2N9K5 9 V.25 Ω 2 A Industry s lowest R DS(on) x area
Obsolete Product(s) - Obsolete Product(s)
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D 2 PAK - I 2 PAK - TO-220FP Features Type 100% avalanche tested Low input capacitance
Features. Description. AM01476v1. Table 1. Device summary. Order code Marking Package Packaging. STF10N80K5 10N80K5 TO-220FP Tube
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT STF10N80K5 800 V 0.600 Ω 9 A 30 W TO-220FP Figure
STD16N50M2, STF16N50M2, STP16N50M2
Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages TAB 3 2 1 DPAK Features Order code V DS at T J max. R DS(on) max. I D Packages TAB STD16N50M2
STP16N65M2, STU16N65M2
STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
N-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D
Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
Features. Description S 7 6 D 5 D 4 S GIPG ALS
STL7N6M N-channel 6 V,.9 Ω typ., 5 A MDmesh M Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V DS @ Tjmax R DS(on) max 7 6 5 STL7N6M 65 V.5 Ω 5 A Extremely low
STD7N60M2, STP7N60M2, STU7N60M2
Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages TAB Features TAB 2 3 1 DPAK Order code V DS R DS(on) max. I D Package STD3NK90ZT4 DPAK STP3NK90Z
Features. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel
Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
STO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications.
Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB TAB Features 1 3
N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet
STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH Power MOSFETs in I 2 PAK, DPAK, TO 220, TO 220FP and IPAK packages TAB TAB Features Order
Features. Features. Description. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T Jmax R DS(on)max I D 5 STL33N60M2 650 V 0.135 Ω 22 A 4
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet production data TAB Order codes V
Features. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel
N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest
STD5N60M2, STP5N60M2, STU5N60M2
Datasheet N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS @ T Jmax R DS(on) max. I D STD5N60M2 STP5N60M2
Features. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
Order code V DS R DS(on) max. I D
N-channel 6 V,.23 Ω typ., 13 A MDmesh M2 EP Power MOSFET in an I²PAK package TAB Features Order code V DS R DS(on) max. I D STI2N6M2-EP 6 V.278 Ω 13 A I²PAK D(2, TAB) 1 2 3 Extremely low gate charge Excellent
Order code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package Features TAB Order code V DS @ T Jmax R DS(on) max. I D STP15N60M2-EP 650 V 0.378 Ω 11 A TO-220 D(2, TAB) 1 2
STD12NF06LT4. N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package. Datasheet. Features. Applications.
Datasheet N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package Features TAB Order code V DS R DS(on) max. I D DPAK D(2, TAB) 2 1 3 STD12NF06LT4 60 V 90 mω 12 A Exceptional dv/dt
STF10N105K5, STP10N105K5, STW10N105K5
STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data TAB Features Order codes V DS R DS(on)
Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet
STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH Power MOSFET in D 2 PAK, TO-220, TO-220FP and TO-247 packages TAB TAB Features 3 1 2 D PAK TO-220 1
STS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
STD4N52K3, STP4N52K3, STU4N52K3
Datasheet N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS R DS(on) max. I D Package STD4N52K3 2.5
Features. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DS R DS(on) max STD7N65M2 650 V 1.15 Ω 5 A I D DPAK 1 3 Extremely low gate
Features. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube
N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet
STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D 2 PAK, I 2 PAK, TO-220 and TO-247 packages TAB TAB Features Order codes V DS @ T
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D TAB 1 3 2 D
Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features
Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description.
STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)
Features. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Datasheet N-channel 620 V, 1.7 Ω typ., 3.8 A MDmesh K3 Power MOSFET in DPAK package Features TAB Order codes V DS R DS(on) max. I D P TOT 2 3 1 DPAK D(2, TAB) STD4N62K3 620 V 2 Ω 3.8 A 70 W 100% avalanche
Automotive-grade N-channel 60 V, Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package. Features. Description.
Automotivegrade Nchannel 60 V, 0.012 Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package Datasheet production data Features TAB Order code V DS R DS(on) max. I D P TOT 60 V 0.014 Ω 60 A 110 W 1 3
N-channel 30 V, Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3. Features.
N-channel 30 V, 0.0027 Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V DS R DS(on) max I D STL23NS3LLH7 30 V 0.0037
Order code V DS R DS(on) max. I D
Datasheet Nchannel 6 V, 15 mω typ., 25 A, MDmesh M6 Power MOSFET in a TO22FP package Features TO22FP D(2) 1 2 3 Order code V DS R DS(on) max. I D STF33N6M6 6 V 125 mω 25 A Reduced switching losses Lower
Automotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.
Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features
Prerelease product(s)
Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
Order code V DS R DS(on) max. I D P TOT
Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2
STD2N62K3, STF2N62K3, STU2N62K3
Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP
N-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
STH12N120K5-2, STP12N120K5, N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V DS R DS(on) max.
N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mω typ., 80 A STripFET F7 Power MOSFETs in D 2 PAK, DPAK, TO-220FP, I 2 PAK and TO-220 packages TAB TAB Features
STT7P2UH7. P-channel 20 V, Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package. Applications. Description.
P-channel 20 V, 0.0195 Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications
STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N
STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I 2 /D 2 PAK - TO-247 Second generation MDmesh Power MOSFET General features Type 100% avalanche tested Low
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
N-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0016 Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D STL160NS3LLH7 30 V 0.0021
STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z
STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D 2 PAK Features Type V DSS R DS(on) max I D P W STB20NK50Z
STD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
STP12NK60Z STF12NK60Z
STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V
N-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0027 Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D 30 V 0.0034 Ω 120 A Very
N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
STB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
Contents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW38N65M5-4 38N65M5 TO247-4 Tube
N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V DS @ T Jmax R DS(on) max I D STW38N65M5-4 710 V 0.095 Ω 30 A Extremely
STP5NK100Z, STF5NK100Z STW5NK100Z
STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type V DSS (@T JMAX ) R DS(on) max STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z
Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
STB30NF10 STP30NF10 - STP30NF10FP
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V
STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
STB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
N-channel 100 V, 5 mω typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS R DS(on) max. I D P TOT STL110N10F7 100 V 6 mω 107 A 136 W Among the lowest R DS(on) on the
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
STP20NM65N STF20NM65N
STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features Order codes V DSS @T jmax R DS(on) max. I D STP20NM65N STF20NM65N 710 V 0.270 Ω 15 A
STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5
STD5N95K5, STF5N95K5, STP5N95K5, N-channel 950 V, 2 Ω typ., 3.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK Datasheet - production data TAB DPAK 2 3 1 TAB 1 2 3 TO-220FP 3 TAB 1 2 1 2
STB160N75F3 STP160N75F3 - STW160N75F3
General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3
STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested