STS10N3LH5. N-channel 30 V, Ω, 10 A, SO-8 STripFET V Power MOSFET. Features. Application. Description
|
|
- Leslie Brooks
- 5 years ago
- Views:
Transcription
1 STSN3LH5 Nchannel 30 V, Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO8 Application Switching applications Description This STripFET V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low onstate resistance providing also one of the bestinclass FOM. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STSN3LH5 D3L SO8 Tape and reel May 2009 Doc ID Rev 1 1/
2 Contents STSN3LH5 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /13 Doc ID Rev 1
3 STSN3LH5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 30 V V GS GateSource voltage ± 22 V (1) I D Drain current (continuous) at T C = 25 C A I D Drain current (continuous) at T C = 0 C 7 A (2) I DM Drain current (pulsed) 40 A P TOT Total dissipation at T C = 25 C 2.5 W E AS (3) T J T stg 1. Limited by wire bonding Derating factor 0.02 W/ C Single pulse avalanche energy 50 mj Operating junction temperature Storage temperature 2. Pulse width limited by safe operating area 3. Starting T J = 25 C, I D = 21 A, L= 0.2 mh 55 to 150 C Table 3. Thermal resistance Symbol Parameter Value Unit R thjc Thermal resistance junctioncase max 50 C/W R thja Thermal resistance junctioncase max 0 C/W T J Maximum lead temperature for soldering purpose 275 C Doc ID Rev 1 3/13
4 Electrical characteristics STSN3LH5 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown Voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = 0 30 V V DS = 30 V V DS = 30 V, Tc = 125 C 1 µa µa V GS = ± 22 V ±0 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 1 V R DS(on) Static drainsource on resistance V GS = V, I D = 5 A Ω V GS = 4.5 V, I D = 5 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V, f = 1 MHz, V GS = pf pf pf Q g Q gs Q gd Total gate charge Gatesource charge Gatedrain charge V DD = 15 V, I D = A V GS = 5 V (Figure 14) nc nc nc Q gs1 Q gs2 Pre V th gatetosource charge Post V th gatetosource charge V DD = 15 V, I D = A V GS = 5 V (Figure 19) nc nc R G Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mv open drain 2.5 Ω 4/13 Doc ID Rev 1
5 STSN3LH5 Electrical characteristics Table 6. Switching on/off (resistive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Turnon delay time Rise time V DD = 15 V, I D = 5 A, R G = 4.7 Ω, V GS = V (Figure 13 and Figure 18) 4 22 ns ns t d(off) t f Turnoff delay time Fall time V DD = 15 V, I D = 5 A, R G = 4.7 Ω, V GS = V (Figure 13 and Figure 18) ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I (1) SDM Sourcedrain current Sourcedrain current (pulsed) 40 A A V SD Forward on voltage I SD = 5 A, V GS = V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = A, V DD = 25 V di/dt = 0 A/µs, (Figure 15) ns nc A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Doc ID Rev 1 5/13
6 Electrical characteristics STSN3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) 0 Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Sinlge pulse AM03899v ms ms 1s VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=V 6V 5V AM03900v1 ID (A) VDS=5V AM03901v V V VDS(V) VGS(V) Figure 6. Normalized BV DSS vs temperature Figure 7. Static drainsource on resistance BVDSS (norm) AM03902v1 RDS(on) (Ω) ID=13.5A VGS=V AM03903v TJ( C) ID(A) 6/13 Doc ID Rev 1
7 STSN3LH5 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations VGS (V) 12 VDD=15V ID=27A AM03904v1 C (pf) T J =25 C f=1mhz AM03905v1 8 5 Ciss Crss Coss Qg(nC) 0 20 VDS(V) Figure. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature AM03906v1 VGS(th) (norm) TJ( C) AM03907v1 RDS(on) (norm) TJ( C) Figure 12. VSD (V) Sourcedrain diode forward characteristics TJ=55 C AM03908v TJ=25 C TJ=175 C ISD(A) Doc ID Rev 1 7/13
8 Test circuits STSN3LH5 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMAX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 0Ω 0nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. switching and diode recovery times Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=0µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% % VDS % 90% VDD VDD VGS 90% AM01472v1 0 % AM01473v1 8/13 Doc ID Rev 1
9 STSN3LH5 Test circuits Figure 19. Gate charge waveform Doc ID Rev 1 9/13
10 Package mechanical data STSN3LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. /13 Doc ID Rev 1
11 STSN3LH5 Package mechanical data SO8 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A a a a b b C c1 45 (typ.) D E e e F L M S 8 (max.) Doc ID Rev 1 11/13
12 Revision history STSN3LH5 5 Revision history Table 8. Document revision history Date Revision Changes 06May First release 12/13 Doc ID Rev 1
13 STSN3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America Doc ID Rev 1 13/13
STL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.
Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
More informationDual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging
Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More informationSTS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
More informationN-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging
Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
More informationSTD65N55LF3 Features Order code DS(on) DSS max. DPAK Application Description Figure 1. Internal schematic diagram
Nchannel 55 V, 7.0 mω, 80 A DPAK STripFET III Power MOSFET Features Order code V DSS R DS(on) max. I D Pw 55 V < 8.5 mω 80 A 110 W Low threshold drive 100% avalanche tested Application Switching applications
More informationSTN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description
Nchannel 60 V, 0.07 Ω, 4 A SOT223 STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STN4NF06L 60 V < 0.1 Ω 4 A 2 Exceptional dv/dt capability Avalanche rugged technology 100% avalanche
More informationSTI260N6F6 STP260N6F6
STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
More informationSTL75N8LF6. N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET. Features. Applications. Description
N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET Features Order code V DSS R DS(on) max STL75N8LF6 80 V < 7.4 mω 18 A (1) 1. The value is rated according R thj-pcb I D R DS(on)
More informationN-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4
STR2N2VH5, STT5N2VH5 Nchannel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in SOT23 and SOT236L packages Features Datasheet preliminary data Order codes V DS R DS(on) max I D P TOT 4 3 STR2N2VH5 0.03
More informationSTB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
More informationN-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
More informationSTB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
More informationN-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.
N-channel 30 V, 0.02 Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 4 5 6 2 SOT23-6L 3 STT6N3LLH6 30 V
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationSTP20NM65N STF20NM65N
STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features Order codes V DSS @T jmax R DS(on) max. I D STP20NM65N STF20NM65N 710 V 0.270 Ω 15 A
More informationN-channel 40 V, 0.03 Ω typ., 30 A, STripFET II Power MOSFET in a DPAK package. Order code Marking Package Packaging
STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
More informationN-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.
N-channel 100 V, 0.062 Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Features Datasheet - production data Order code V DS R DS(on) max I D 1 2 3 STL3N10F7 100 V 0.07 Ω 4 A 1
More informationSTB120N4LF6 STD120N4LF6
STB120N4LF6 STD120N4LF6 Nchannel 40 V, 3.1 mω, 80 A DPAK, D²PAK STripFET VI DeepGATE Power MOSFET Features Order codes V DSS R DS(on) max I D STB120N4LF6 40 V 4.0 mω 80 A STD120N4LF6 40 V 4.0 mω 80 A Logic
More informationSTH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
N-channel 40 V, 0.0018 mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V 0.0022 Ω 120 A 150 W 2
More informationSTD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
More informationI D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationSTW43NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode) Features. Application. Description
Nchannel 600 V, 0.075 Ω, 35 A TO247 FDmesh Power MOSFET (with fast diode) Features Type V DSS @ T JMAX R DS(on) max STW43NM60ND 650 V < 0.088 Ω 35 A The worldwide best R DS(on) *area amongst the fast recovery
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationSTB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
More informationSTD96N3LLH6. N-channel 30 V, Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET. Features. Application. Description
Nchannel 30 V, 0.0037 Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type V DSS R DS(on) max I D STD96N3LLH6 30 V 0.0042 Ω 80 A R DS(on) * Q g industry benchmark Extremely low onresistance R
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationN-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package. Features. Description. Table 1.
N-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package Features Datasheet - preliminary data Order code V DS R DS(on) max I D TAB 1 1 H 2 PAK-6 7 STH260N6F6-6 60 V 2.4
More informationSTF40NF03L STP40NF03L
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features Type V DSS R DS(on) max I D STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STL6N3LLH6 STG1 PowerFLAT 2x2 Tape and reel
Nchannel 30 V, 0.02 Ω typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 2 3 STL6N3LLH6 30 V 0.025Ω (V GS= 0 V) 0.04Ω
More informationAutomotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.
Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
More informationSTV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
More informationSTN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationSTF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N
STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features
More informationN-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationN-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF18N6M2 N-channel 6 V,.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF18N6M2 65 V.28 Ω 13 A
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More informationSTP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationSTB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
More informationSTF20NK50Z, STP20NK50Z
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationP-channel 30 V, Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package. Features V GS = 10 V. R DS(on) * Q g industry benchmark
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
More informationSTP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More informationN-channel 20 V, Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package. Order code Marking Package Packaging
N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V DSS R DS(on) max I D 20 V < 0.003 Ω 28 A Improved die-to-footprint ratio Very low profile package Very
More informationSTH310N10F7-2, STH310N10F7-6
N-channel 100 V, 1.9 mω typ., 180 A STripFET VII DeepGATE Power MOSFET in H 2 PAK-2 and H 2 PAK-6 packages Features Datasheet - production data Order codes V DS R DS(on) max. I D TAB TAB STH310N10F7-2
More informationSTB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
More informationN-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging
N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V
More informationN-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages. P tot. Order codes Marking Package Packaging
Features STFW6N120K3, STP6N120K3, STW6N120K3 Nchannel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO3PF, TO220 and TO247 packages Datasheet production data Order codes V DSS R DS(on) max I D P
More informationSTF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP and I 2 PAKFP packages Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STF13N60M2 STFI13N60M2
More information2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type V DSS R DS(on) R DS(on) *Q g P TOT STK850 30V
More informationN-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package. Features. Application. Description. AM01476v1. Table 1.
N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram
More informationSTP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
More informationSTP90NF03L STB90NF03L-1
STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
More informationSTB18NM80, STF18NM80, STP18NM80, STW18NM80
Features STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Order codes V DSS R DS(on)
More informationSTD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
More informationSTF24N60M2, STFI24N60M2, STFW24N60M2
STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAKFP and TO-3PF packages Features Datasheet production data Order codes V
More informationObsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
More informationSTD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND
STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh II Power MOSFET I 2 PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V DSS (@T jmax )R DS(on) max I D STD11NM60ND
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube
N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
More informationSTD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data TAB TAB DPAK
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
More informationSTF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, IPAK Features Datasheet production data Order codes V DSS R DS(on) max. I D Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω 5.4
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3
More informationN-channel 30 V, Ω typ., 10 A, P-channel 30 V, Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package. Features STL40C30H3LL
N-channel 30 V, 0.019 Ω typ., A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Features Datasheet - production data Order code Channel V DS R DS(on) max I D
More informationN-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.
STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
More informationSTB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description
N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
More informationSTD10NM60ND, STF10NM60ND STP10NM60ND
STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Features Order codes STD10NM60ND STF10NM60ND STP10NM60ND V DSS @T J max
More informationObsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
More informationSTF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB
More informationN-channel 450 V Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package. Features. Description.
N-channel 45 V - 3.3 Ω typ.,.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram Order code V DSS
More informationDual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
More informationN-channel 100 V, Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description.
STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 1 2 STL100N10F7
More informationN-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationIRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description V DSS
More informationSTB7ANM60N, STD7ANM60N
STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order codes V DS @ T jmax R DS(on) max.
More informationSTB30NF10 STP30NF10 - STP30NF10FP
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V
More informationSTP4NK60Z, STP4NK60ZFP
STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Features Datasheet - production data Order codes V DS R DS(on) max. P TOT
More informationN-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube
N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET Features Type V DSS R DS(on) Max I D Pw STW9NK95Z 950 V < 1.38 Ω 7 A 160 W Extremely high dv/dt capability 100% avalanche
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DS R DS(on) max STD7N65M2 650 V 1.15 Ω 5 A I D DPAK 1 3 Extremely low gate
More informationSTP36NF06L STB36NF06L
STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional
More informationSTFW69N65M5 STW69N65M5
STFW69N65M5 STW69N65M5 Nchannel 650 V, 0.037 Ω typ., 58 A MDmesh V Power MOSFET in TO3PF and TO247 packages Features Datasheet production data Order codes V DSS @ T Jmax R DS(on) max I D STFW69N65M5 STW69N65M5
More informationSTB18N60M2, STP18N60M2, STP18N60M2. N-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages
STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 2 3 1 D PAK Order
More informationSTD2NC45-1 STQ1NC45R-AP
STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NC45-1 450V
More informationSTD100N10F7, STF100N10F7, STP100N10F7
STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data TAB Features DPAK TAB Order
More informationSTB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet production data Features Order code V DSS R DS(on) max. I D STB55NF06 STP55NF06 60 V < 0.018 Ω 50
More informationSTP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.
N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type V DSS R DS(on) I D STP70NS04ZC Clamped < 10mΩ 80A Low capacitance and gate charge 100% avalanche tested 175 C maximum
More informationSTB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D 2 PAK, TO-220FP, TO-220 and TO-247 Features TAB Datasheet production data Order codes STB18NM60N
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D p W STY30NK90Z 900V
More informationSTW57N65M5, STWA57N65M5
STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Features Datasheet - production data Order codes V DS @ T Jmax R DS(on) max I
More information