STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
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1 STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < Ω 65 A STD70N10F4 100 V < Ω 60 A STP70N10F4 100 V < Ω 65 A STW70N10F4 100 V < Ω 65 A TO-247 TO Exceptional dv/dt capability Extremely low on-resistance R DS(on) 100% avalanche tested Application Switching applications Description This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. 3 1 DPAK 1 D²PAK Figure 1. Internal schematic diagram 3 Table 1. Device summary Order codes Marking Package Packaging STB70N10F4 70N10F4 D²PAK Tape and reel STD70N10F4 70N10F4 DPAK Tape and reel STP70N10F4 70N10F4 TO-220 Tube STW70N10F4 70N10F4 TO-247 Tube October 2009 Doc ID Rev 3 1/
2 Contents STB/D/P/W70N10F4 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /18 Doc ID Rev 3
3 STB/D/P/W70N10F4 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, TO-247, D²PAK DPAK Unit V DS Drain-source voltage (V GS = 0) 100 V V GS Gate-source voltage ± 20 V I D Drain current (continuous) at T C = 25 C A I D Drain current (continuous) at T C = 100 C A (1) I DM Drain current (pulsed) A P TOT Total dissipation at T C = 25 C W Derating factor W/ C E (2) AS Single pulse avalanche energy 120 mj T stg Storage temperature T j Max. operating junction temperature 55 to 175 C 1. Pulse width limited by safe operating area 2. Starting T j = 25 C, I D = 32.5 A, V DD = 45 V Table 3. Thermal data Value Symbol Parameter TO-220, TO-247, D²PAK DPAK Unit R thj-case Thermal resistance junction-case max C/W R thj-a Thermal resistance junction-ambient max (1) C/W T l Maximum lead temperature for soldering purpose 300 C 1. When mounted on FR-4 board of 1 inch², 2 oz Cu Doc ID Rev 3 3/18
4 Electrical characteristics STB/D/P/W70N10F4 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source Breakdown voltage Zero gate voltage Drain current (V GS = 0) I D = 250 µa, V GS = V V DS = max rating 1 µa V DS = max rating,t C =125 C 100 µa I GSS Gate-body leakage current (V DS = 0) V GS = ± 20 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 2 4 V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 30 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 5800 pf C oss Output capacitance V DS = 25 V, f = 1 MHz, 300 pf - - V GS = 0 Reverse transfer C rss 190 pf capacitance Q g Total gate charge V DD = 80 V, I D = 65 A, 85 nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 16) 25 nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Turn-on delay time Rise time V DD = 50 V, I D = 30 A R G =4.7 Ω V GS = 10 V (see Figure 15) ns ns t d(off) t f Turn-off-delay time Fall time V DD = 50 V, I D = 30 A, R G =4.7 Ω, V GS = 10 V (see Figure 15) ns ns 4/18 Doc ID Rev 3
5 STB/D/P/W70N10F4 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I SD (1) I SDM (2) V SD t rr Q rr I RRM Source-drain current 60 A - Source-drain current (pulsed) 240 A Forward on voltage I SD = 60 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 60 A, V DD = 25 V di/dt = 100 A/µs, T j = 150 C (see Figure 17) ns nc A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 3 5/18
6 Electrical characteristics STB/D/P/W70N10F4 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, TO-247, D²PAK Figure 3. Thermal impedance for TO-220, TO-247, D²PAK ID (A) AM03243v Operation in this area is Limited by max RDS(on) 100µs 1ms 1 Tj=175 C Tc=25 C Single pulse VDS(V) 10ms Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK ID (A) AM03245v Operation in this area is Limited by max RDS(on) Tj=175 C Tc=25 C Single pulse VDS(V) 100µs 1ms 10ms Figure 6. Output characteristics Figure 7. Transfer characteristics ID (A) AM03168v1 ID (A) AM03169v VGS=10V 6V 160 VDS=6V V VDS(V) VGS(V) 6/18 Doc ID Rev 3
7 STB/D/P/W70N10F4 Electrical characteristics Figure 8. Normalized B VDSS vs temperature Figure 9. Static drain-source on resistance BVDSS (norm) 1.1 VGS=0 ID=250µA AM03170v1 RDS(on) (mω) VGS=10V AM03176v TJ( C) ID(A) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations VGS (V) VDD=50V VGS=10V ID=65A AM03171v1 C (pf) AM03172v1 Ciss Qg(nC) Coss 100 Crss VDS(V) Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature VGS(th) (norm) AM03173v1 RDS(on) (norm) AM03174v VDS=VGS ID=250µA TJ( C) VGS=10V ID=30A TJ( C) Doc ID Rev 3 7/18
8 Electrical characteristics STB/D/P/W70N10F4 Figure 14. VSD (V) 0.9 Source-drain diode forward characteristics TJ=-55 C AM03175v1 0.8 TJ=25 C TJ=175 C ISD(A) 8/18 Doc ID Rev 3
9 STB/D/P/W70N10F4 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMAX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 Doc ID Rev 3 9/18
10 Package mechanical data STB/D/P/W70N10F4 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/18 Doc ID Rev 3
11 STB/D/P/W70N10F4 Package mechanical data TO-220 type A mechanical data mm Dim Min Typ Max A b b c D D E e e F H J L L L L P Q _Rev_S Doc ID Rev 3 11/18
12 Package mechanical data STB/D/P/W70N10F4 TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A A A b b c c D D E E e 2.28 e H L 1 L L L R 0.20 V2 0 o 8 o _G 12/18 Doc ID Rev 3
13 STB/D/P/W70N10F4 Package mechanical data TO-247 Mechanical data Dim. mm. Min. Typ Max. A A b b b c D E e 5.45 L L L øp ør S 5.50 Doc ID Rev 3 13/18
14 Package mechanical data STB/D/P/W70N10F4 D²PAK (TO-263) mechanical data Dim mm inch Min Typ Max Min Typ Max A A b b c c D D E E e e H J L L L R V _M 14/18 Doc ID Rev 3
15 STB/D/P/W70N10F4 Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B B D D E F K P P P R W BASE QTY BULK QTY Doc ID Rev 3 15/18
16 Packaging mechanical data STB/D/P/W70N10F4 D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W BASE QTY BULK QTY /18 Doc ID Rev 3
17 STB/D/P/W70N10F4 Revision history 6 Revision history Table 8. Document revision history Date Revision Changes 12-Nov First release 14-Jan Added new package, mechanical data DPAK 09-Oct Added new package, mechanical data D²PAK Doc ID Rev 3 17/18
18 STB/D/P/W70N10F4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 Doc ID Rev 3
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