STB18NM80, STF18NM80, STP18NM80, STW18NM80

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1 Features STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Order codes V DSS R DS(on) max STB18NM V < Ω 17 A STF18NM V < Ω 17 A (1) I D 1 D²PAK 3 TO-220FP STP18NM V < Ω 17 A STW18NM V < Ω 17 A 1. Limited only by maximum temperature allowed 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO TO Application Switching applications Description Figure 1. Internal schematic diagram These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB18NM80 D²PAK Tape and reel STF18NM80 STP18NM80 18NM80 TO-220FP TO-220 Tube STW18NM80 TO-247 May 2012 Doc ID Rev 5 1/21 This is information on a product in full production. 21

2 Contents STB18NM80, STF18NM80, STP18NM80, STW18NM80 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /21 Doc ID Rev 5

3 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO-220 D²PAK TO-247 TO-220FP Unit V DS Drain-source voltage 800 V V GS Gate-source voltage ± 30 V Drain current (continuous) at I D (1) A T C = 25 C I D I DM (2) Drain current (continuous) at T C = 100 C 1. Limited only by maximum temperature allowed (1) A Drain current (pulsed) (1) A P TOT Total dissipation at T C = 25 C W V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;t C = 25 C) 2. Pulse width limited by safe operating area 2500 V T stg Storage temperature -65 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value TO-220 D²PAK TO-247 TO-220FP Unit R thj-case Thermal resistance junction-case C/W R thj-amb Thermal resistance junction-amb C/W R thj-pcb Thermal resistance junction-pcb 30 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. Avalanche characteristics Symbol Parameter Max value Unit I AS E AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, I D = I AS, V DD = 50 V) 4 A 600 mj Doc ID Rev 5 3/21

4 Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 1 ma, V GS = V V DS = 800 V, V DS = 800 V,Tc = 125 C µa µa V GS = ± 30 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 8.5 A Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit (1) g fs C iss C oss C rss (2) C oss eq. R G Q g Q gs Q gd Forward transconductance V DS = 15 V, I D = 8.5 A S Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge V DS = 50 V, f = 1 MHz, V GS = pf pf pf V GS = 0, V DS = 0 to 640 V pf f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mv Open Drain V DD = 640 V, I D = 17 A V GS = 10 V (see Figure 17) Ω nc nc nc 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/21 Doc ID Rev 5

5 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD = 400 V, I D = 8.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 16 and Figure 21) ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 17 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 17 A, di/dt = 100 A/µs, V DD = 100 V, (see Figure 18) I SD = 17 A, di/dt = 100 A/µs, V DD = 100 V, Tj=150 C (see Figure 18) A A ns µc A ns µc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 5 5/21

6 Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK Figure 3. Thermal impedance for TO-220, D²PAK ID (A) 10 Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 1 Tj=150 C Tc=25 C Single pulse 10ms VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ID (A) 10 Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 1 Tj=150 C Tc=25 C Single pulse 10ms VDS(V) Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP ID (A) 10 1 Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 10ms 0.1 Tj=150 C Tc=25 C Single pulse VDS(V) 6/21 Doc ID Rev 5

7 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID (A) 40 VGS=10V ID (A) 40 VDS=20V V V 5 5V VDS(V) VGS(V) Figure 10. Normalized B VDSS vs temperature Figure 11. Static drain-source on-resistance BVDSS (norm) 1.06 I D =1mA RDS(on) (Ω) 0.28 VGS=10V TJ( C) ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations VGS (V) VDS VDD=640V ID=17A VGS 700 C (pf) Ciss Crss Coss Qg(nC) VDS(V) Doc ID Rev 5 7/21

8 Electrical characteristics STB18NM80, STF18NM80, STP18NM80, STW18NM80 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature VGS(th) (norm) I D =250µA RDS(on) (norm) 2.1 I D =8.5A 1.9 V GS =10V TJ( C) TJ( C) 8/21 Doc ID Rev 5

9 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Test circuits 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 Doc ID Rev 5 9/21

10 Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 9. Dim. D²PAK (TO-263) mechanical data mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /21 Doc ID Rev 5

11 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 22. D²PAK (TO-263) drawing _T Figure 23. D²PAK footprint (a) Footprint a. All dimensions are in millimeters Doc ID Rev 5 11/21

12 Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 10. Dim. TO-220FP mechanical data mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia /21 Doc ID Rev 5

13 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 24. TO-220FP drawing _Rev_K_B Doc ID Rev 5 13/21

14 Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 11. Dim. TO-220 type A mechanical data mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /21 Doc ID Rev 5

15 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 25. TO-220 type A drawing _typeA_Rev_S Doc ID Rev 5 15/21

16 Package mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 Table 12. Dim. TO-247 mechanical data mm. Min. Typ. Max. A A b b b c D E e L L L P R S /21 Doc ID Rev 5

17 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Package mechanical data Figure 26. TO-247 drawing _G Doc ID Rev 5 17/21

18 Packaging mechanical data STB18NM80, STF18NM80, STP18NM80, STW18NM80 5 Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /21 Doc ID Rev 5

19 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 28. Reel REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID Rev 5 19/21

20 Revision history STB18NM80, STF18NM80, STP18NM80, STW18NM80 6 Revision history Table 14. Document revision history Date Revision Changes 25-Feb First release. 07-Apr Section 4: Package mechanical data has been modified. 20-Apr R DS(on) max value has been corrected. 09-Sep Document status promoted from preliminary data to datasheet. 25-May Figure 12: Gate charge vs gate-source voltage has been updated. Minor text changes. 20/21 Doc ID Rev 5

21 STB18NM80, STF18NM80, STP18NM80, STW18NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID Rev 5 21/21

N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1

N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1 STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP