STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
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1 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, Ω typ., 26 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB TAB 2 I PAK TO-220 TO-220FP TO-247 Figure 1. Internal schematic diagram, TAB Features Order codes STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 V T Jmax R DS(on) max 650 V Ω 1. Limited by maximum junction temperature. Extremely low gate charge Lower R DS(on) x area vs previous generation MDmesh II technology Low gate input resistance 100% avalanche tested Zener-protected I D 26 A (1) 26 A Applications Switching applications LCC converters, resonant converters AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Q g. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STF33N60M2 TO-220FP STI33N60M2 STP33N60M2 33N60M2 I 2 PAK TO-220 Tube STW33N60M2 TO-247 November 2013 DocID Rev 2 1/19 This is information on a product in full production.
2 Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /19 DocID Rev 2
3 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter I 2 PAK, TO-220 TO-247 TO-220FP Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 C (1) A I D Drain current (continuous) at T C = 100 C (1) A I (2) DM Drain current (pulsed) (1) A P TOT Total dissipation at T C = 25 C W dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) T stg Storage temperature T j Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 26 A, di/dt 400 A/µs; V DS peak < V (BR)DSS, V DD = 400 V. 4. V DS 480 V 2500 V - 55 to 150 C Table 3. Thermal data Value Symbol Parameter TO-220FP I 2 PAK, TO-220 TO-247 Unit R thj-case Thermal resistance junction-case max C/W R thj-amb Thermal resistance junction-ambient max C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) Single pulse avalanche energy (starting T j =25 C, I D = I AR ; V DD =50) 5 A 2300 mj DocID Rev 2 3/19 19
4 Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) I D = 1 ma, V GS = V V DS = 600 V V DS = 600 V, T C =125 C Gate-body leakage I GSS V current (V DS = 0) GS = ± 25 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V Static drain-source R DS(on) V on-resistance GS = 10 V, I D = 13 A Ω µa µa Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 100 V, f = 1 MHz, pf C rss V GS = 0 Reverse transfer capacitance pf C (1) Equivalent output oss eq. capacitance V DS = 0 to 480 V, V GS = pf R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 480 V, I D = 26 A, nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 19) nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d (on) Turn-on delay time V DD = 300 V, I D = 13 A, ns t r (v) Voltage rise time R G = 4.7 Ω, V GS = 10 V ns t d (off) Turn-off-delay time (see Figure 18 and ns t f (i) Fall time Figure 23) ns 4/19 DocID Rev 2
5 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 26 A I (1) SDM Source-drain current (pulsed) A V (2) SD Forward on voltage I SD = 26 A, V GS = V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 26 A, di/dt = 100 A/µs V DD = 60 V (see Figure 23) µc I RRM Reverse recovery current - 30 A t rr Reverse recovery time I SD = 26 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V, T j = 150 C µc I RRM Reverse recovery current (see Figure 23) A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID Rev 2 5/19 19
6 Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP ID (A) AM17917v Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse VDS(V) 10µs 100µs 1ms 10ms Figure 4. Safe operating area for I 2 PAK and TO-220 Figure 5. Thermal impedance for I 2 PAK and TO-220 ID (A) AM17906v Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse VDS(V) 10µs 100µs 1ms 10ms Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID (A) AM17918v Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 1 Tj=150 C Tc=25 C Single pulse VDS(V) 10ms 6/19 DocID Rev 2
7 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID (A) 60 VGS=7, 8, 9, 10V 6V AM17907v1 ID (A) 60 VDS=17V AM17908v V V VDS(V) Figure 10. Gate charge vs gate-source voltage VGS(V) Figure 11. Static drain-source on-resistance VGS (V) VDS VDD=480V ID=26A AM17909v1 VDS (V) RDS(on) (Ω) VGS=10V AM17910v Qg(nC) Figure 12. Capacitance variations ID(A) Figure 13. Output capacitance stored energy C (pf) AM17911v1 Eoss (µj) AM17912v Ciss Coss 10 Crss VDS(V) VDS(V) DocID Rev 2 7/19 19
8 Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 14. Normalized gate threshold voltage vs temperature VGS(th) (norm) ID=250µA AM17913v TJ( C) Figure 16. Normalized V DS vs temperature VDS (norm) ID=1mA TJ( C) AM17915v1 Figure 15. Normalized on-resistance vs temperature RDS(on) (norm) ID=13A VDS=10V TJ( C) Figure 17. Source-drain diode forward characteristics VSD (V) TJ=150 C TJ=-50 C TJ=25 C AM17914v1 AM17916v ISD(A) 8/19 DocID Rev 2
9 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Test circuits 3 Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load switching and diode recovery times Figure 21. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton toff tdon tr tdoff tf 0 90% 10% VDS 10% 90% VGS 90% 0 10% AM01473v1 DocID Rev 2 9/19 19
10 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/19 DocID Rev 2
11 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 9. TO-220FP mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia DocID Rev 2 11/19 19
12 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 24. TO-220FP drawing _Rev_K_B 12/19 DocID Rev 2
13 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 10. I²PAK (TO-262) mechanical data DIM. mm. min. typ max. A A b b c c D e e E L L L Figure 25. I²PAK (TO-262) drawing _Rev_H DocID Rev 2 13/19 19
14 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 11. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /19 DocID Rev 2
15 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 26. TO-220 type A drawing DocID Rev 2 15/19 19
16 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 12. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /19 DocID Rev 2
17 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 27. TO-247 drawing _G DocID Rev 2 17/19 19
18 Revision history STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 5 Revision history Table 13. Document revision history Date Revision Changes 13-Sep First release. 19-Nov Modified: R DS(on) and I D values in cover page Modified: values in Table 4 Modified: R DS(on) typical and maximum values in Table 5, the entire typical values in Table 6, 7 and 8 Added: Section 2.1: Electrical characteristics (curves) Minor text changes 18/19 DocID Rev 2
19 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID Rev 2 19/19 19
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P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
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N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
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N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
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N-channel 650 V, 0.067 Ω typ., 35 A MDmesh V Power MOSFET in D 2 PAK, TO-220FP and TO-220 packages Datasheet production data TAB Features D 2 PAK TAB 2 3 1 1 2 3 TO-220FP Order codes V DSS @ T Jmax R DS(on)
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N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V DS @ T Jmax R DS(on) max I D STW38N65M5-4 710 V 0.095 Ω 30 A Extremely
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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
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N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T Jmax R DS(on)max I D 5 STL33N60M2 650 V 0.135 Ω 22 A 4
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