STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5

Transcription

1 STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh V Power MOSFET DPAK, I 2 PAK, TO-220FP, TO-220, IPAK Features Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 V T Jmax R DS(on) max 710 V < 0.43 Ω I D 8.5 A 8.5 A (1) 8.5 A 8.5 A 8.5 A P TOT W 25 W IPAK 70 W 1 70 W 70 W DPAK 3 TO Limited only by maximum temperature allowed. Worldwide best R DS(on) * area Higher V DSS rating and high dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Applications Switching applications I²PAK TO-220FP Figure 1. Internal schematic diagram Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Packages Packaging STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 12N65M5 DPAK TO-220FP I²PAK TO-220 IPAK Tape and reel Tube Tube Tube Tube June 2011 Doc ID Rev 5 1/

2 Contents STD/F/I/P/U12N65M5 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /23 Doc ID Rev 5

3 STD/F/I/P/U12N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, IPAK, DPAK, I²PAK TO-220FP Unit V DS Drain-source voltage (V GS = 0) 650 V V GS Gate-source voltage 25 V I D Drain current (continuous) at T C = 25 C (1) A I D Drain current (continuous) at T C = 100 C (1) A (2) I DM Drain current (pulsed) (1) A P TOT Total dissipation at T C = 25 C W Avalanche current, repetitive or notrepetitive (pulse width limited by T j I AR 2.5 A max) E AS dv/dt (3) V ISO Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50 V) 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. I SD 8.5 A, di/dt 400 A/µs; V Peak < V (BR)DSS, V DD = 400 V 150 mj Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) 2500 V T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value DPAK IPAK I²PAK TO-220 TO-220FP Unit R thj-case R thj-amb (1) R thj-pcb T l Thermal resistance junction-case max Thermal resistance junctionambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose C/W C/W 50 C/W 300 C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID Rev 5 3/23

4 Electrical characteristics STD/F/I/P/U12N65M5 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D = 1 ma, V GS = V V DS = Max rating V DS = Max rating, T C =125 C µa µa V GS = ± 25 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 4.3 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss (1) C o(tr) C (2) o(er) R G Q g Q gs Q gd Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge V DS = 100 V, f = 1 MHz, V GS = 0 V DS = 0 to 520 V, V GS = pf pf pf pf pf f = 1 MHz open drain Ω V DD = 520 V, I D = 4.25 A, V GS = 10 V (see Figure 20) nc nc nc 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS 4/23 Doc ID Rev 5

5 STD/F/I/P/U12N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d (v) t r (v) t f (i) t c (off) Voltage delay time Voltage rise time Current fall time Crossing time V DD = 400 V, I D = 5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 21 and Figure 24) ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 8.5 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 8.5 A, di/dt = 100 A/µs V DD = 100 V (see Figure 24) I SD = 8.5 A, di/dt = 100 A/µs V DD = 100 V, T j = 150 C (see Figure 24) A A ns µc A ns µc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 5 5/23

6 Electrical characteristics STD/F/I/P/U12N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and I²PAK Figure 3. Thermal impedance for TO-220 and I²PAK ID (A) AM05572v Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms 0.1 Tj=150 C Tc=25 C Sinlge pulse VDS(V) 10ms Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK 6/23 Doc ID Rev 5

7 STD/F/I/P/U12N65M5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID (A) 14 VGS=10V 12 7V V 5V AM05575v VDS(V) ID (A) AM05576v1 VDS= 20V VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS (V) VDS VDD=520V ID=4.25A AM05578v Qg(nC) RDS(on) (Ω) AM05577v1 VGS= 10V ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C (pf) AM05579v1 Eoss (µj) 4.0 AM05580v Ciss Coss Crss VDS(V) VDS(V) Doc ID Rev 5 7/23

8 Electrical characteristics STD/F/I/P/U12N65M5 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature VGS(th) (norm) AM05581v1 RDS(on) (norm) ID= 4.25 A VGS= 10 V AM05501v TJ( C) TJ( C) Figure 16. Source-drain diode forward characteristics Figure 17. Normalized B 1 ma vs temperature VSD (V) 1.2 TJ=-50 C AM05584v1 BVDSS (norm) 1.07 AM05583v1 1.0 TJ=25 C TJ=150 C ISD(A) TJ( C) Figure 18. Switching losses vs gate resistance (1) E (µj) ID=5A VDD=400V Eon AM05585v Eoff RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/23 Doc ID Rev 5

9 STD/F/I/P/U12N65M5 Test circuits 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform Doc ID Rev 5 9/23

10 Package mechanical data STD/F/I/P/U12N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/23 Doc ID Rev 5

11 STD/F/I/P/U12N65M5 Package mechanical data Table 8. Dim. DPAK (TO-252) mechanical data mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L L L L R 0.20 V2 0 8 Doc ID Rev 5 11/23

12 Package mechanical data STD/F/I/P/U12N65M5 Figure 25. DPAK (TO-252) drawing _H Figure 26. DPAK footprint (a) AM08850v1 a. All dimension are in millimeters 12/23 Doc ID Rev 5

13 STD/F/I/P/U12N65M5 Package mechanical data Table 9. DIM. IPAK (TO-251) mechanical data mm. min. typ max. A A b b b B5 0.3 c c D E e 2.28 e H L L L V1 10 o Doc ID Rev 5 13/23

14 Package mechanical data STD/F/I/P/U12N65M5 Figure 27. IPAK (TO-251) drawing _H AM09214V1 14/23 Doc ID Rev 5

15 STD/F/I/P/U12N65M5 Package mechanical data Table 10. DIM. I²PAK (TO-262) mechanical data mm. min. typ max. A A b b c c D e e E L L L Doc ID Rev 5 15/23

16 Package mechanical data STD/F/I/P/U12N65M5 Figure 28. I²PAK (TO-262) drawing _typeA_Rev_S 16/23 Doc ID Rev 5

17 STD/F/I/P/U12N65M5 Package mechanical data Table 11. Dim. TO-220 type A mechanical data mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q Doc ID Rev 5 17/23

18 Package mechanical data STD/F/I/P/U12N65M5 Figure 29. TO-220 type A drawing _typeA_Rev_S 18/23 Doc ID Rev 5

19 STD/F/I/P/U12N65M5 Package mechanical data Table 12. Dim. TO-220FP mechanical data mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia Figure 30. TO-220FP drawing L7 E A B Dia L6 L5 D F1 F2 F H G1 G L2 L4 L _Rev_K Doc ID Rev 5 19/23

20 Packaging mechanical data STD/F/I/P/U12N65M5 5 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W /23 Doc ID Rev 5

21 STD/F/I/P/U12N65M5 Packaging mechanical data Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 32. Reel REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID Rev 5 21/23

22 Revision history STD/F/I/P/U12N65M5 6 Revision history Table 14. Document revision history Date Revision Changes 24-Feb First release 27-Feb Corrected package information on first page 21-Jan Document status promoted from preliminary data to datasheet 29-Jun Jun Figure 15: Normalized on resistance vs temperature has been updated V GS vale in Table 4 has been corrected Updated Figure 18 and Figure 20. Updated gate charge in Table 5 and switching time in Table 6. 22/23 Doc ID Rev 5

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