STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP

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1 General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM V < 0.25Ω 20A STP20NM50 550V < 0.25Ω 20A STP20NM50FP 550V < 0.25Ω 20A I D TO TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge I²PAK D²PAK 3 Low gate input resistance Description Internal schematic diagram The MDmesh is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. Applicatio Switching applicatio Order codes Part number Marking Package Packaging STB20NM50 B20NM50 D²PAK Tape & reel STB20NM50-1 B20NM50-1 I²PAK Tube STP20NM50 P20NM50 TO-220 Tube STP20NM50FP P20NM50FP TO-220FP Tube January 2007 Rev 13 1/

2 Contents STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Revision history /14

3 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK / I²PAK TO-220 TO-220FP Unit V DS Drain source voltage 500 V V GS Gate-source voltage ± 30 V I D Drain current (continuous) at T C = 25 C (1) A I D Drain current (continuous) at T C = 100 C (1) A I DM (2) Drain current (pulsed) (1) A P TOT Total dissipation at T C = 25 C W Derating factor W/ C dv/dt (3) Peak diode recovery voltage slope 15 V/ V ISO Iulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;t C =25 C) V T j T stg Operating junction temperature Storage temperature -65 to 150 C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. I SD < 20A, di/dt < 400A/µs, V DD < V (BR)DSS, T J < T JMAX Table 2. Thermal data Value Symbol Parameter D²PAK / I²PAK TO-220 TO-220FP Unit Rthj-case Thermal resistance junction-case max C/W Rthj-amb Thermal resistance junction-amb max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25 C, I D = 5A, V DD = 50V) 10 A 650 mj 3/14

4 Electrical characteristics STB20NM50 - STB20NM STP20NM50 - STP20NM50FP 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage I D = 250µA, V GS = V I DSS Zero gate voltage drain current (V GS = 0) V DS = Max rating, V DS = Max C 1 10 µa µa I GSS Gate body leakage current (V DS = 0) V GS = ±30V ±100 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 10 A Ω Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit g fs (1) Forward traconductance V DS > I D(ON) x R DS(ON)max, I D = 10A 10 S C iss C oss C rss Input capacitance Output capacitance Reverse trafer capacitance V DS =25V, f=1 MHz, V GS = pf pf pf C oss eq. (2) Equivalent output capacitance V GS =0, V DS =0V to 400V 130 pf Rg Gate input resistance f=1mhz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD =400V, I D = 20A V GS =10V (see Figure 15) nc nc nc 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. C oss eq. is defined as a cotant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/14

5 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Electrical characteristics Table 6. Switching times Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD =250 V, I D =10A, R G =4.7Ω, V GS =10V (see Figure 14) t r(voff) t f t c Off-voltage rise time Fall time Cross-over time V DD =400 V, I D =20A, R G =4.7Ω, V GS =10V (see Figure 16) Table 7. Source drain diode Symbol Parameter Test conditio Min. Typ. Max Unit I SD I (1) SDM Source-drain current Source-drain current (pulsed) A A V SD (2) Forward on voltage I SD =20A, V GS =0 1.5 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =20A,di/dt=100A/µs, V DD =100 V, Tj= 25 C (see Figure 16) µc A t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =20A,di/dt=100A/µs, V DD =100 V, Tj=150 C (see Figure 16) µc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration 300µs duty cycle 1.5% 5/14

6 Electrical characteristics STB20NM50 - STB20NM STP20NM50 - STP20NM50FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ D²PAK/I²PAK Figure 2. Thermal impedance for TO-220/ D²PAK/I²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Trafer characteristics 6/14

7 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Electrical characteristics Figure 7. Traconductance Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variatio Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14

8 Electrical characteristics STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Figure 13. Source-drain diode forward characteristics 8/14

9 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Test circuit 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped Inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/14

10 Package mechanical data STB20NM50 - STB20NM STP20NM50 - STP20NM50FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specificatio are available at: 10/14

11 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Package mechanical data TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A b b c D E e e F H J L L L L øp Q /14

12 Package mechanical data STB20NM50 - STB20NM STP20NM50 - STP20NM50FP TO-220FP MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L L Ø H G B D A E L6 L7 L3 G1 F1 F L2 L5 F2 L /14

13 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Revision history 5 Revision history Table 8. revision history Date Revision Changes 09-Sep Final version 04-Sep The document has been reformatted 15-Dec Modified Table 7.: Source drain diode 08-Jan Modified value in order code 26-Jan Modified Table 6.: Switching times 13/14

14 STB20NM50 - STB20NM STP20NM50 - STP20NM50FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance