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1 Nchannel 100 V, Ω, 220 A, ISOTOP STripFET Power MOSFET Features Type V DSS R DS(on) I D STE250NS V < Ω 220 A Standard threshold drive 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" stripbased process. The resulting traistor shows extremely high packing deity for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applicatio Switching application Figure 1. ISOTOP Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STE250NS10 E250NS10 ISOTOP Tube March 2010 Doc ID 8220 Rev 3 1/

2 Contents STE250NS10 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Mounting information Mounting on heatsink Revision history /14 Doc ID 8220 Rev 3

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Draiource voltage (v gs = 0) 100 V V GS Gate source voltage ±20 V I D Drain current (continuos) at T C = 25 C 220 A I D Drain current (continuos) at T C = 100 C 156 A (1) I DM Drain current (pulsed) 880 A P TOT Total dissipation at T C = 25 C 500 W dv/dt (2) Derating factor 4 W/ C Peak diode recovery voltage slope 3.5 V/ V ISO Iulation winthstand voltage (DC) 2500 V T J T stg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. I SD 220 A, di/dt 200 A/µs, V DD V (BR)DSS, T j T JMAX Table 3. Thermal data to 150 Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase Max 0.25 CW R thja Thermal resistance junctionambient Max 50 CW Table 4. Avalanche characteristics Symbol Parameter Value Unit I AS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) E AS Single pulse avalanche energy (starting Tj=25 C, Id=Iar, Vdd=64 V) C 220 A 800 mj Doc ID 8220 Rev 3 3/14

4 Electrical characteristics STE250NS10 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)DSS I DSS Draiource Breakdown voltage Zero gate voltage Drain current (V GS = 0) I D = 1 ma, V GS = V V DS = max rating 50 µa V DS = max rating, T C =125 C 500 µa I GSS Gatebody leakage current (V DS = 0) V GS = ± 20 V ±400 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static draiource on resistance V GS = 10 V, I D = 125 A Ω Table 6. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit g fs Forward traconductance V DS = 20 V, I D =70 A 60 S C iss Input capacitance 31 nf C oss Output capacitance V DS = 25 V, f = 1 MHz, 4.3 nf V GS = 0 Reverse trafer C rss 1.2 nf capacitance Q g Total gate charge 900 nc Q gs Gatesource charge V DD = 50 V, I D = 22 A, V GS = 10 V 160 nc Q gd Gatedrain charge 330 nc Table 7. Switching times Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r t d(off) t f Turnon delay time Rise time Turnoffdelay time Fall time V DD =50 V, I D =125 A, R G =4.7 Ω, V GS = 10 V (see Figure 14) V DD =50 V, I D =125 A, R G =4.7 Ω, V GS = 10 V (see Figure 13) t r(voff) t f t c Offvoltage rise time fall time crossover time V DD =80 V, I D =220 A, R G =4.7 Ω, V GS =10 V (see Figure 15) /14 Doc ID 8220 Rev 3

5 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditio Min Typ. Max Unit I SD Sourcedrain current 220 A (1) I SDM Sourcedrain current (pulsed) 880 A V (2) SD Forward on voltage I SD = 220 A, V GS = V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % I SD = 220 A, V DD = 30 V di/dt = 100 A/µs, T j = 150 C (see Figure 16) µc A Doc ID 8220 Rev 3 5/14

6 Electrical characteristics STE250NS Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characterisics Figure 5. Trafer characteristics Figure 6. Traconductance Figure 7. Static draiource on resistance 6/14 Doc ID 8220 Rev 3

7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variatio Figure 10. Figure 12. Normalized gate threshold voltage vs temperature Sourcedrain diode forward characteristics Figure 11. Figure 13. Normalized on resistance vs temperature Normalized breakdown voltage vs temperature Doc ID 8220 Rev 3 7/14

8 Test circuits STE250NS10 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. switching and diode recovery times Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 8/14 Doc ID 8220 Rev 3

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Doc ID 8220 Rev 3 9/14

10 Package mechanical data STE250NS10 ISOTOP MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F G H J K L M N O O G N J K L M H A B C D E F 10/14 Doc ID 8220 Rev 3

11 Mounting information 5 Mounting information 5.1 Mounting on heatsink Figure 20. Screws distance Table 9. Heatsink specification Parameter Flatness (max concavity or convexity between fixing holes) Table 10. Surface finish Fixing holes Mounting specification Parameter Fixing screw Torque R thjcase/heatsink Table 11. Connectors Parameter Value 20 µm (0.78 mils) ± 1.2 µm (± 0.05 mils) D= M4 L= mm ( inch) Value M4 + lock washer 1.3 ± 0.2 N m (7.6 ± 1.2 LBS inch) 0.05 CW Value Screws See Figure 21 Torque Pull test (fast on pi) Twist test 1.3 ± 0.2 N m (7.6 ± 1.2 LBS inch) 80 N N/A Doc ID 8220 Rev 3 11/14

12 Mounting information STE250NS10 Table 11. Connectors (continued) Parameter Value Contact area (screw version) 45 mm 2 Lead inductance 5 nh Figure 21. Mounting section Figure 22. Cross form Table 12. Package for shipment Shipment Details Tube Elementary box (bulk quantity) Ordered quantity 10 pcs + contact set (screw +washer) 100 pieces (10 tubes) Multiples of 10 pcs 12/14 Doc ID 8220 Rev 3

13 Revision history 6 Revision history Table 13. Revision history Date Revision Changes 21Jun Complete version. 04Oct New template, no content change. 22Mar Added Section 5: Mounting information. Doc ID 8220 Rev 3 13/14

14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 14/14 Doc ID 8220 Rev 3

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08