STGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description
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1 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low onvoltage drop (V CE(sat) ) Very soft Ultrafast recovery antiparallel diode Applicatio High frequency motor drives SMPS and PFC in both hard switch and resonant topologies TO Description This device is an ultrafast IGBT. It utilizes the advanced Power MESH process resulting in an excellent tradeoff between switching performance and low otate behavior. Figure 1. Internal schematic diagram Table 1. Device summary Part number Marking Package Packaging STGWA19NC60HD GWA19NC60HD TO247 long leads Tube September 2011 Doc ID Rev 1 1/
2 Contents STGWA19NC60HD Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /14 Doc ID Rev 1
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = 0) 600 V I C (1) I C (1) I CL (2) I CP (3) I F Continuous collector current at T C = 25 C Continuous collector current at T C = 100 C 2. Vclamp = 80%V CES, T J = 150 C, R G = 10 Ω, V GE = 15 V 52 A 31 A Turnoff latching current 40 A Pulsed collector current 60 A Diode RMS forward current at T C = 25 C 20 A Surge not repetitive forward current t I p =10 ms FSM 50 A sinusoidal V GE Gateemitter voltage ±20 V P TOT Total dissipation at T C = 25 C 208 W T J Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula: T I C ( T C ) jmax ( ) T = C R thj c V CE( sat) ( max) T jmax ( ( ), I C ( T C )) 3. Pulse width limited by maximum permissible junction temperature and turnoff within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junctioncase diode 3 C/W Thermal resistance junctioncase IGBT 0.6 C/W R thja Thermal resistance junctionambient 50 C/W Doc ID Rev 1 3/14
4 Electrical characteristics STGWA19NC60HD 2 Electrical characteristics T J = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 12 A V GE = 15 V, I C = 15 A V GE = 15 V, I C =30 A,T J =100 C V GE = 15 V, I C =12 A,T J =125 C V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V I CES I GES g fs (1) Collector cutoff current (V GE = 0) Gateemitter leakage current (V CE = 0) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% V CE = 600 V V CE = 600 V,T J = 125 C V µa ma V GE = ±20 V ±100 na Forward traconductance V CE = 15 V, I C = 12 A 5 S Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gateemitter charge Gatecollector charge V CE = 390 V, I C = 5 A, V GE = 15 V, Figure nc nc nc 4/14 Doc ID Rev 1
5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, Figure A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, TJ = 125 C Figure A/µs t r(voff) t d(voff) t f Off voltage rise time Turnoff delay time Current fall time V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, Figure t r(voff) t d(voff) t f Off voltage rise time Turnoff delay time Current fall time V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, T J = 125 C Figure Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit E on E off (1) E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, Figure µj µj µj E on E off (1) E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 390 V, I C = 12 A R G = 10 Ω, V GE = 15 V, T J = 125 C Figure µj µj µj 1. Turnoff losses include also the tail of the collector current Table 8. Collectoremitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward onvoltage I F = 12 A I F = 12 A, T J = 125 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 12 A, V R = 40 V, di/dt = 100 A/µs Figure nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 12 A, V R = 40 V, T J =125 C, di/dt = 100 A/µs Figure nc A Doc ID Rev 1 5/14
6 Electrical characteristics STGWA19NC60HD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics Figure 4. Traconductance Figure 5. Collectoremitter on voltage vs. temperature Figure 6. Gate charge vs. gatesource voltage Figure 7. Capacitance variatio 6/14 Doc ID Rev 1
7 Electrical characteristics Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collectoremitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current Doc ID Rev 1 7/14
8 Electrical characteristics STGWA19NC60HD Figure 14. Turnoff SOA Figure 15. Thermal impedance Figure 16. Forward voltage drop vs. forward current I FM(A) T j=125 C (typical values) T j=125 C (maximum values) T j=25 C (maximum values) V FM(V) /14 Doc ID Rev 1
9 Test circuits 3 Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit AM01504v1 AM01505v1 Figure 19. Switching waveform Figure 20. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 Doc ID Rev 1 9/14
10 Package mechanical data STGWA19NC60HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. 10/14 Doc ID Rev 1
11 Package mechanical data Table 9. Dim. TO247 long leads mechanical data mm. Min. Typ. Max. A D E F F F G BSC H L L L L L L M V 10 V1 3 V3 20 Dia Doc ID Rev 1 11/14
12 Package mechanical data STGWA19NC60HD Figure 21. TO247 long leads drawing 12/14 Doc ID Rev 1
13 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 14Sep Initial release. Doc ID Rev 1 13/14
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 14/14 Doc ID Rev 1
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