STGB14NC60KD STGF14NC60KD, STGP14NC60KD
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1 STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V shortcircuit rugged IGBT Features Short circuit withstand time 10µs. TAB 2 TAB Low onvoltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Switching losses include diode recovery energy 1 D²PAK 3 TO Very soft ultra fast recovery antiparallel diode Applicatio High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent tradeoff between switching performance and low otate behavior. Figure 1. TO220FP Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STGB14NC60KDT4 GB14NC60KD D²PAK Tape and reel STGF14NC60KD GF14NC60KD TO220FP Tube STGP14NC60KD GP14NC60KD TO220 Tube March 2010 Doc ID Rev 7 1/
2 Contents STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /16 Doc ID Rev 7
3 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO220/D²PAK TO220FP Unit V CES Collectoremitter voltage (V GE = 0) 600 V (1) I C Continuous collector current at T C = 25 C A (1) I C Continuous collector current at T C = 100 C 14 7 A I (2) CL Turnoff latching current 50 A (3) I CP Pulsed collector current 50 A V GE Gateemitter voltage ±20 V I F Diode RMS forward current at T C = 25 C 20 A Surge non repetitive forward current t I p = 10 ms FSM 55 A sinusoidal V ISO Iulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; T C = 25 C) 2500 V P TOT Total dissipation at T C = 25 C W t scw Short circuit withstand time, V CE = 0.5V BR(CES), T C = 125 C, R G = 10 Ω, V GE = 12 V 10 µs T j Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula I C ( T C ) T jmax ( ) T C R thj c V CE( sat) ( max) T jmax = ( ( ), I C ( T C )) 2. Vclamp = 80% of V CES, T j =150 C, R G =10 Ω, V GE =15 V 3. Pulse width limited by maximum junction temperature and turnoff within RBSOA Table 3. Thermal data Symbol Parameter Value TO220/D²PAK TO220FP Unit R thjcase Thermal resistance junctioncase IGBT C/W R thjcase Thermal resistance junctioncase diode C/W R thjamb Thermal resistance junctionambient 62.5 C/W Doc ID Rev 7 3/16
4 Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD 2 Electrical characteristics (T j =25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES I GES Collectoremitter breakdown voltage (V GE = 0) Gateemitter leakage current (V CE = 0) I C = 1 ma 600 V V GE = ±20 V ±100 na I CES Collector cutoff current (V GE = 0) V CE = 600 V V CE = 600 V, T j = 125 C µa ma V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 7 A V GE = 15 V, I C = 7 A, T j = 125 C V V g fs (1) Forward traconductance V CE = 15 V, I C = 7 A 3.2 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gateemitter charge Gatecollector charge V CE = 390 V, I C = 7 A, V GE = 15 V (see Figure 19) nc nc nc 4/16 Doc ID Rev 7
5 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 7 A R G = 10 Ω, V GE = 15 V, (see Figure 18) A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 7 A R G = 10 Ω, V GE = 15 V, T j = 125 C (see Figure 18) A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V cc = 390 V, I C = 7 A, R GE = 10 Ω, V GE = 15 V (see Figure 18) t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V cc = 390 V, I C = 7 A, R GE = 10 Ω, V GE = 15 V T j = 125 C (see Figure 18) Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min Typ. Max Unit Eon (1) E off (2) E ts Eon (1) E off (2) E ts Turnon switching losses Turnoff switching losses Total switching losses Turnon switching losses Turnoff switching losses Total switching losses V CC = 390 V, I C = 7 A R G = 10 Ω, V GE = 15 V, (see Figure 18) V CC = 390 V, I C = 7 A R G = 10 Ω, V GE = 15 V, T j = 125 C (see Figure 18) 1. Eon is the turnon losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a copack diode, the copack diode is used as external diode. IGBTs and DIODE are at the same temperature (25 C and 125 C) 2. Turnoff losses include also the tail of the collector current µj µj µj µj µj µj Table 8. Collectoremitter diode Symbol Parameter Test conditio Min Typ. Max Unit V F Forward onvoltage I F = 7 A I F = 7 A, T C = 125 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 7 A, V R = 40 V, di/dt = 100 A/µs (see Figure 21) nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 7 A, V R = 40 V, T j = 125 C, di/dt = 100 A/µs (see Figure 21) nc A Doc ID Rev 7 5/16
6 Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics Figure 4. Traconductance Figure 5. Collectoremitter on voltage vs temperature Figure 6. Collectoremitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 6/16 Doc ID Rev 7
7 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9. Gate charge vs gateemitter voltage Figure 10. Capacitance variatio Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current Doc ID Rev 7 7/16
8 Electrical characteristics STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Figure 14. Thermal impedance for TO220 and D 2 PAK Figure 15. Turnoff SOA Figure 16. Thermal impedance for TO220FP Figure 17. Forward voltage drop versus forward current FM(A) Tj=150 C (Maximum values) Tj=150 C (Typical values) Tj=25 C (Maximum values) VFM(V 8/16 Doc ID Rev 7
9 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Test circuits 3 Test circuits Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit Figure 20. Switching waveforms Figure 21. Diode recovery times waveform Doc ID Rev 7 9/16
10 Package mechanical data STGB14NC60KD, STGF14NC60KD, STGP14NC60KD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. 10/16 Doc ID Rev 7
11 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Package mechanical data D2PAK (TO263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm inch Min Typ Max Min Typ Max _M Doc ID Rev 7 11/16
12 Package mechanical data STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Table 9. Dim. TO220FP mechanical data mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia Figure 22. TO220FP drawing L7 E A B Dia L6 L5 D F1 F2 F H G1 G L2 L4 L _Rev_K 12/16 Doc ID Rev 7
13 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Package mechanical data TO220 type A mechanical data mm Dim Min Typ Max A b b c D D E e e F H J L L L L P Q _Rev_S Doc ID Rev 7 13/16
14 Packaging mechanical data STGB14NC60KD, STGF14NC60KD, STGP14NC60KD 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W BASE QTY BULK QTY * on sales type 14/16 Doc ID Rev 7
15 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Revision history 6 Revision history Table 10. Document revision history Date Revision Changes 14Jun New release 05Jul Complete version 22Jul Value changed in table 6 27Jan Ierted ecopack indication 28Apr New template, modified curves 6 and 8 02Apr Modified test conditio on Table 4 15Mar Updated packages mechanical data. Doc ID Rev 7 15/16
16 STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 16/16 Doc ID Rev 7
17 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STGP14NC60KD STGF14NC60KD STGB14NC60KDT4
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