Order code Marking Package Packaging. STE07DE220 E07DE220 ISOTOP Tube. May 2008 Rev 1 1/7
|
|
|
- Suzanna Oliver
- 5 years ago
- Views:
Transcription
1 Hybrid emitter switched bipolar traistor ESBT A W power module Preliminary Data Features Table 1. CS(ON) I C R CS(ON) 0.5 7A 0.07 Ω High voltage / high current cascode configuration Ultra low equivalent on resistance ery fast-switch, up to 150 khz Ultra low C ISS ISOTOP Low dynamic CS(ON) Applicatio Industrial converters Welding Description The is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The is designed for use in industrial mai flyback converters and/or special applicatio. Figure 1. Internal schematic diagrams Table 2. Device summary Order code Marking Package Packaging E07DE220 ISOTOP Tube May 2008 Rev 1 1/7 This is preliminary information on a new product in developement or undergoing evaluation. Detail are subject to change without notice. 7
2 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter alue Unit CS(SS) Collector-source voltage ( BS = GS = 0) 2200 BS(OS) Base-source voltage (I C =0, GS = 0) 40 SB(OS) Source-base voltage (I C =0, GS = 0) 10 GS Gate-source voltage ± 20 I C Collector current 7 A I CM Collector peak current (t P < 5 ms) 14 A I B Base current 7 A I BM Base peak current (t P < 1 ms) 14 A P tot Total dissipation at T c 25 C 220 W T stg Storage temperature -40 to 150 C T J Max. operating junction temperature 125 C ISO Iulation withstand voltage (AC-RMS) from all four leads to external heatsink 2500 Table 3. Thermal data Symbol Parameter alue Unit R thj-case Thermal resistance junction-case max 0.45 C/W 2/7
3 Electrical characteristics 2 Electrical characteristics (T case = 25 C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditio Min. Typ. Max. Unit I CS(SS) I BS(OS) I SB(OS) I GS(OS) Collector-source current ( BS = GS = 0) Base-source current (I C =0, GS = 0) Source-base current (I C =0, GS = 0) Gate-source leakage ( BS = 0) CS = µa BS = µa SB = µa GS = ± na CS(ON) Collector-source ON voltage GS = 10 I C = 7 A I B = 1.4 A GS = 10 I C = 3.5 A I B = 0.35 A h FE DC current gain GS = 10 CS = 1 I C = 7 A GS = 10 CS = 1 I C = 3.5 A 9 15 BS(ON) Base-source ON voltage GS = 10 I C = 7 A I B = 1.4 A GS = 10 I C = 3.5 A I B = 0.35 A GS(th) Gate threshold voltage BS = GS I B = 250 µa C iss Input capacitance ( GS = CB = 0) CS = 25 f = 1 MHz pf Q GS(tot) Gate-source charge ( CB = 0) CS = 25 GS = 10 I C = 7 A nc Inductive load GS = 10 R G = 47 Ω t s Storage time Clamp = 1760 t p = 4 µs t f Fall time I C = 3.5 A I B = 0.7 A Inductive load GS = 10 R G = 47 Ω t s Storage time Clamp = 1760 t p = 4 µs t f Fall time I C = 3.5 A I B = 0.35 A 3/7
4 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specificatio are available at: 4/7
5 Package mechanical data ISOTOP MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A B C C D D E E E G G G F F P P S P093A 5/7
6 Revision history 4 Revision history 26 Table 5. Document revision history Date Revision Changes 20-May First release. 6/7
7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics N and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROED IN WRITING BY AN AUTHORIZE REPRESENTATIE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEERE PROPERTY OR ENIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS AUTOMOTIE GRADE MAY ONLY BE USED IN AUTOMOTIE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7
Part Number Marking Package Packing. STC03DE220HV C03DE220HV TO247-4L HV Tube. November 2006 Rev 1 1/8
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 W Preliminary Data General features Table 1. General features V CS(ON) I C R CS(ON) 1V 3A 0.33Ω Low equivalent on resistance Very fast-switch,
Part Number Marking Package Packaging. STC12IE90HV C12IE90HV TO247-4L HV Tube. January 2007 Rev 1 1/11
Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features V CS(ON) I C R CS(ON) 1V 12A 0.083 W High voltage / high current Cascode configuration Low equivalent on
STC03DE170HP. Hybrid emitter switched bipolar transistor ESBT 1700V - 3A W. Features. Applications. Description.
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 W Features V CS(ON) I C R CS(ON) 1 V 3 A 0.33 Ω Low equivalent on resistance Very fast-switch, up to 150 khz Squared RBSOA, up to 1700V
STC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description.
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features V CS(ON) I C R CS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration Low equivalent
STC04IE170HV. Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A Ω. Features. Application. Description
Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features V CS(ON) I C R CS(ON) 0.7 V 4 A 0.17 Ω High voltage / high current cascode configuration Low equivalent ON resistance
Obsolete Product(s) - Obsolete Product(s)
TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
Obsolete Product(s) - Obsolete Product(s)
High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent
STX616. High voltage NPN power transistor. Features. Applications. Description
STX616 High voltage NPN power transistor Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications Switching mode power supply Battery charger
BUL98. High voltage fast-switching NPN power transistor. General features. Applications. Internal schematic diagram. Description.
High voltage fast-switching NPN power transistor General features High voltage capability Minimum lot-to-lot spread for reliable operation Low base drive requirements ery high switching speed Fully characterized
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
STB13007DT4. High voltage fast-switching NPN power transistor. General features. Internal schematic diagram. Description. Applications.
High voltage fast-switching NPN power transistor General features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage
STGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description
STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
Obsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description
SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver
Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12
3 Phase inverter IGBT - SEMITOP 3 module PRELIMINARY DATA General features Type V CES @ I C =7A, V CE(sat) (Max) Ts=25 C I C @80 C STG3P3M25N60 600V < 2.5V 25A N-channel very fast PowerMESH IGBT Lower
STGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description
30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with
Obsolete Product(s) - Obsolete Product(s)
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
LK115XX30 LK115XX33 - LK115XX50
LK115XX30 LK115XX33 - LK115XX50 ery low drop with inhibit voltage regulators Features ery low dropout voltage (0.2 typ.) ery low quiescent current (Typ. 0.01 µa in off mode, 280 µa in on mode) Output current
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
STGB14NC60K STGD14NC60K
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio (
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
Obsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
Obsolete Product(s) - Obsolete Product(s)
PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
Obsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
Part Number Marking Package Packing. MD1802FX MD1802FX ISOWATT218FX Tube. August 2006 Rev 1 1/8
High voltage NPN Power transistor for standard Definition CRT display Preliminary Data General features State-of-the-art technology: Diffused collector Enhanced generation More stable performances versus
ST13003D-K High voltage fast-switching NPN power transistor Features Applications Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General
ST High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features DC current gain classification High voltage capability Low spread of dynamic parameters ery high switching speed TAB Applications Electronic ballast
Obsolete Product(s) - Obsolete Product(s)
High voltage fast-switching NPN Power transistor General features High voltage and high current capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed High ruggedness
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier
STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
BD533 BD535 BD537 BD534 BD536
BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features. BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with Base Island layout.
High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing
High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
MD1802FX. High voltage NPN power transistor for standard definition CRT display. Features. Applications. Description
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation
ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description.
High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation
STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
Obsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
BUV298V. NPN transistor power module. General features. Applications. Internal schematic diagram. Order codes
NPN transistor power module General features NPN Transistor High current power bipolar module Very low R th junction case Specific accidental overload areas Fully insulated package (U.L. compliant) for
STB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
TR136. High voltage fast-switching NPN power transistor. Features. Applications. Description
TR136 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
STGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description
40 A - 600 V - very fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode Applicatio High frequency inverters UPS Motor drivers
BUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
Obsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications
STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
(1) Radiation level. Quality level. Engineering model. February 2012 Doc ID Rev 2 1/12
Hi-Rel NPN and PNP bipolar traistor 60 V, 2 A Target specification Features Polarity BV CEO I C (max) (1) h FE NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and V CE = 2 V. Very low collector-emitter
STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
ST13003D-K. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation ery high switching speed Integrated antiparallel
BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220
BD243C BD244C Complementary power transistors Features. Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with Base Island
MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device
Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
Obsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
BDX53B - BDX53C BDX54B - BDX54C
BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter
Obsolete Product(s) - Obsolete Product(s)
2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
Obsolete Product(s) - Obsolete Product(s)
Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration
Very high voltage NPN power transistor for high definition and slim CRT display. Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube
HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display Features PRELIMINARY DATA State-of-the-art technology: diffused collector enhanced generation EHVS1 Wider range
TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier Description The devices
High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing
High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
STP90NF03L STB90NF03L-1
STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
Obsolete Product(s) - Obsolete Product(s)
High voltage NPN power transistor for standard definition CRT display General features State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature
STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
Obsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
STD830CP40. Complementary transistor pair in a single package. Features. Application. Description
Complementary transistor pair in a single package Datasheet production data Features Low CE(sat) Simplified circuit design Reduced component count Low spread of dynamic parameters Application Compact fluorescent
BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed
High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
Obsolete Product(s) - Obsolete Product(s)
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
D44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar
ST26025A. PNP power Darlington transistor. Features. Applications. Description
ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching
STB160N75F3 STP160N75F3 - STW160N75F3
General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3
Order codes Marking Package Packaging
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters ery high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery
BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description
BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube
2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
Obsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar
2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
Order codes Marking Package Packaging. STX0560 X0560 TO-92 Bag STX0560-AP X0560 TO-92AP Ammopack. December 2010 Doc ID Rev 1 1/9
High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description
STB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description
High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement
STP12NK60Z STF12NK60Z
STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V
Obsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
STD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description
5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1
N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging
N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V
STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V