STGB14NC60K STGD14NC60K

Size: px
Start display at page:

Download "STGB14NC60K STGD14NC60K"

Transcription

1 STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio ( no cross conduction susceptibility) Short circuit withstand time 10µs Description I C STGB14NC60K 600V <2.5V 14A STGD14NC60K 600V <2.5V 14A 1 D²PAK 3 1 DPAK 3 Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH IGBTs, with outstanding performances. The suffix K identifies a family optimized for high frequency motor control applicatio with short circuit withstand capability. Internal schematic diagram Applicatio High frequency inverters Motor drivers with short circuit protection Order codes Part number Marking Package Packaging STGB14NC60KT4 GB14NC60K D²PAK Tape & reel STGD14NC60KT4 GD14NC60K DPAK Tape & reel July 2006 Rev 1 1/

2 Contents STGB14NC60K - STGD14NC60K Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Packaging mechanical data Revision history /16

3 STGB14NC60K - STGD14NC60K Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GS = 0) 600 V (1) I C Collector current (continuous) at T C = 25 C 25 A (1) I C Collector current (continuous) at T C = 100 C 14 A I (2) CL Collector current (pulsed) 50 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C 80 W Short circuit withstand time, V t CE = 0.5V BR(CES), scw Tj = 125 C, R G = 10Ω, V GE = 12V 10 µs T stg Storage temperature T j Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula: T T I ( T ) = JMAX C C C R V ( T, I ) THJ C CESAT( MAX) C C 2. V clamp = 480V, Tj =150 C, R G = 10Ω, V GE = 15V Table 2. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.25 C/W R thj-amb Thermal resistance junction-ambient max 62.5 C/W 3/16

4 Electrical characteristics STGB14NC60K - STGD14NC60K 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 3. Static Symbol Parameter Test condictio Min. Typ. Max. Unit V BR(CES) I GES Collector-emitter breakdown voltage Gate-emitter leakage current (V CE = 0) I C = 1mA, V GE = V V GE = ±20V, V CE = 0 ±100 na I CES Collector cut-off current (V GE = 0) V CE = Max rating, T C = 25 C V CE = Max rating, T C = 125 C µa ma V GE(th) Gate threshold voltage V CE = V GE, I C = 250µA V V CE(SAT) Collector-emitter saturation voltage V GE = 15V, I C = 7A V GE = 15V, I C = 7A, Tc= 125 C V V g fs (1) Forward traconductance V CE = 15V, I C = 7A 3 S 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 4. Dynamic Symbol Parameter Test condictio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gate-emitter charge Gate-collector charge V CE = 390V, I C = 7A, V GE = 15V (see Figure 17) nc nc nc 4/16

5 STGB14NC60K - STGD14NC60K Electrical characteristics Table 5. Switching on/off (inductive load) Symbol Parameter Test condictio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390V, I C = 7A R G =10Ω, V GE = 15V, Tj= 25 C (see Figure 16) A/µs t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390V, I C = 7A R G =10Ω, V GE = 15V, Tj= 125 C (see Figure 16) A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V cc = 390V, I C = 7A, R GE = 10Ω, V GE = 15V T J = 25 C (see Figure 16) t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V cc = 390V, I C = 7A, R GE = 10Ω, V GE = 15V Tj = 125 C (see Figure 16) Table 6. Switching energy (inductive load) Symbol Parameter Test condictio Min Typ. Max Unit Eon (1) E (2) off E ts Eon (1) (2) E off E ts Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses V CC = 390V, I C = 7A R G =10Ω, V GE = 15V, Tj= 25 C (see Figure 16) V CC = 390V, I C = 7A R G =10Ω, V GE = 15V, Tj= 125 C (see Figure 16) 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25 C and 125 C) 2. Turn-off losses include also the tail of the collector current µj µj µj µj µj µj 5/16

6 Electrical characteristics STGB14NC60K - STGD14NC60K 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Trafer characteristics Figure 3. Traconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Collector-emitter on voltage vs collector current Figure 6. Normalized gate threshold vs temperature 6/16

7 STGB14NC60K - STGD14NC60K Electrical characteristics Figure 7. Normalized breakdown voltage vs temperature Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variatio Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/16

8 Electrical characteristics STGB14NC60K - STGD14NC60K Figure 13. Thermal impedance Figure 14. Turn-off SOA Figure 15. Thermal impedance for D²PAK 8/16

9 STGB14NC60K - STGD14NC60K Test circuit 3 Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveforms Figure 19. Diode recovery times waveform 9/16

10 Package mechanical data STGB14NC60K - STGD14NC60K 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specificatio are available at: 10/16

11 3 STGB14NC60K - STGD14NC60K Package mechanical data D 2 PAK MECHANICAL DATA TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B C C D D E E G L L L M R V2 0º 4º 1 11/16

12 Package mechanical data STGB14NC60K - STGD14NC60K DPAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A A A B b C C D D E E e e H L (L1) L L R V F 12/16

13 STGB14NC60K - STGD14NC60K Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimeio are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B B D D E F K P P P R W BASE QTY BULK QTY /16

14 Packaging mechanical data STGB14NC60K - STGD14NC60K D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W * on sales type BASE QTY BULK QTY /16

15 STGB14NC60K - STGD14NC60K Revision history 6 Revision history Table 7. Revision history Date Revision Changes 12-Jul New release 15/16

16 STGB14NC60K - STGD14NC60K Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES

More information

STGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description

STGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs

More information

Obsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications

Obsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs

More information

STGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description

STGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency

More information

STGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description

STGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description 40 A - 600 V - very fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode Applicatio High frequency inverters UPS Motor drivers

More information

STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD

STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) 2 Lower C RES / C IES ratio (no cross-conduction susceptibility)

More information

Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12

Sales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12 3 Phase inverter IGBT - SEMITOP 3 module PRELIMINARY DATA General features Type V CES @ I C =7A, V CE(sat) (Max) Ts=25 C I C @80 C STG3P3M25N60 600V < 2.5V 25A N-channel very fast PowerMESH IGBT Lower

More information

STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop

More information

STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description

STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description 5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1

More information

STGW30N120KD STGWA30N120KD

STGW30N120KD STGWA30N120KD STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged

More information

STGW30NC60WD. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT. General features. Description. Internal schematic diagram

STGW30NC60WD. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT. General features. Description. Internal schematic diagram N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type V CES V CE(sat) Max @25 C I C @100 C STGW30NC60WD 600V < 2.5V 30A High frequency operation Lower C RES / C IES ratio

More information

STGBL6NC60D STGPL6NC60D

STGBL6NC60D STGPL6NC60D STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet production data Features Low C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TAB

More information

STGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description

STGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description 30 A, 600 V ultra fast IGBT Features High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency motor

More information

Order codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube

Order codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube STGB19NC60H, STGP19NC60H STGW19NC60H 19 A 600 V very fast IGBT Features Low onvoltage drop (V CE(sat) ) High frequency operation Applicatio High frequency motor drives TO247 1 2 3 TAB 1 2 3 SMPS and PFC

More information

STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram. STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C I C @100 C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE

More information

STGW30NC60VD. 40 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description

STGW30NC60VD. 40 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applicatio High frequency

More information

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented

More information

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching

More information

STB160N75F3 STP160N75F3 - STW160N75F3

STB160N75F3 STP160N75F3 - STW160N75F3 STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3

More information

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested

More information

STB160N75F3 STP160N75F3 - STW160N75F3

STB160N75F3 STP160N75F3 - STW160N75F3 General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3

More information

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1

More information

STD30NF03L STD30NF03L-1

STD30NF03L STD30NF03L-1 STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold

More information

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche

More information

STB30NF10 STP30NF10 - STP30NF10FP

STB30NF10 STP30NF10 - STP30NF10FP STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V

More information

STGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description

STGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description 31 A, 600 V, very fast IGBT with Ultrafast diode Features Low onvoltage drop (V CE(sat) ) Very soft Ultrafast recovery antiparallel diode Applicatio High frequency motor drives SMPS and PFC in both hard

More information

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V

More information

STGE50NC60VD. 50 A V very fast IGBT. Features. Applications. Description

STGE50NC60VD. 50 A V very fast IGBT. Features. Applications. Description 50 A 600 V very fast IGBT Features High current capability High frequency operation Low C RES /C IES ratio (no crossconduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio

More information

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package

More information

STGW38IH130D, STGWT38IH130D

STGW38IH130D, STGWT38IH130D STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop

More information

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9 Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop

More information

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard

More information

STP90NF03L STB90NF03L-1

STP90NF03L STB90NF03L-1 STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced

More information

STP36NF06 STP36NF06FP

STP36NF06 STP36NF06FP STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications. High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram. N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics

More information

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V

More information

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance

More information

STP36NF06L STB36NF06L

STP36NF06L STB36NF06L STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable

More information

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

STGB14NC60KD STGF14NC60KD, STGP14NC60KD

STGB14NC60KD STGF14NC60KD, STGP14NC60KD STGB14NC60KD STGF14NC60KD, STGP14NC60KD 14 A, 600 V shortcircuit rugged IGBT Features Short circuit withstand time 10µs. TAB 2 TAB Low onvoltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction

More information

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

STB80NF55-08T4 STP80NF55-08, STW80NF55-08 STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08

More information

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description

More information

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable

More information

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description V DSS

More information

STP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.

STP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type V DSS R DS(on) I D STP70NS04ZC Clamped < 10mΩ 80A Low capacitance and gate charge 100% avalanche tested 175 C maximum

More information

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8 2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W

More information

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description 2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in

More information

Order code Marking Package Packaging. STE07DE220 E07DE220 ISOTOP Tube. May 2008 Rev 1 1/7

Order code Marking Package Packaging. STE07DE220 E07DE220 ISOTOP Tube. May 2008 Rev 1 1/7 Hybrid emitter switched bipolar traistor ESBT 2200-7A - 0.07 W power module Preliminary Data Features Table 1. CS(ON) I C R CS(ON) 0.5 7A 0.07 Ω High voltage / high current cascode configuration Ultra

More information

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description 2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier

More information

STD2NC45-1 STQ1NC45R-AP

STD2NC45-1 STQ1NC45R-AP STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NC45-1 450V

More information

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V

More information

STB High voltage fast-switching NPN power transistor. Features. Applications. Description

STB High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power

More information

STGB20NC60V, STGP20NC60V, STGW20NC60V

STGB20NC60V, STGP20NC60V, STGW20NC60V STGB20NC60V, STGP20NC60V, STGW20NC60V 30 A - 600 V - very fast IGBT Features Datasheet - production data High frequency operation up to 50 khz Lower C RES / C IES ratio (no cross-conduction susceptibility)

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D p W STY30NK90Z 900V

More information

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface

More information

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High voltage fast-switching NPN Power transistor General features High voltage and high current capability Low spread of dynamic parameters Low base-drive requirements Very high switching speed High ruggedness

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration

More information

STGW35HF60WD. 35 A, 600 V ultra fast IGBT. Features. Applications. Description

STGW35HF60WD. 35 A, 600 V ultra fast IGBT. Features. Applications. Description 35 A, 600 V ultra fast IGBT Features Improved E off at elevated temperature Minimal tail current Low conduction losses V CE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel

More information

STP12NK60Z STF12NK60Z

STP12NK60Z STF12NK60Z STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V

More information

BD533 BD535 BD537 BD534 BD536

BD533 BD535 BD537 BD534 BD536 BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features. BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with Base Island layout.

More information

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High

More information

STC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description.

STC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description. Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features V CS(ON) I C R CS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration Low equivalent

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V

More information

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V shortcircuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) Lower C RES / C IES ratio (no crossconduction susceptibility) Very

More information

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET Features Type V DSS R DS(on) Max I D Pw STW9NK95Z 950 V < 1.38 Ω 7 A 160 W Extremely high dv/dt capability 100% avalanche

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology Peak collector current I

More information

BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed

BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent

More information

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V

More information

BUV298V. NPN transistor power module. General features. Applications. Internal schematic diagram. Order codes

BUV298V. NPN transistor power module. General features. Applications. Internal schematic diagram. Order codes NPN transistor power module General features NPN Transistor High current power bipolar module Very low R th junction case Specific accidental overload areas Fully insulated package (U.L. compliant) for

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D 2 PAK - I 2 PAK - TO-220FP Features Type 100% avalanche tested Low input capacitance

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off

More information

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier

More information

BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220

BD243C BD244C. Complementary power transistors. Features. Applications. Description. Complementary NPN-PNP devices. Power linear and switching TO-220 BD243C BD244C Complementary power transistors Features. Complementary NPN-PNP devices Applications Power linear and switching Description The device is manufactured in Planar technology with Base Island

More information

BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description

BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching

More information

STW11NK100Z STW11NK100Z

STW11NK100Z STW11NK100Z STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features V Type DSS R (@Tjmax) DS(on) I D Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W Extremely high dv/dt

More information

BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123

BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123 Small signal Schottky diodes Main product characteristics I F V RRM C (typ) T j (max) 350 ma 40 V 18 pf 150 C SOD-123 BAT48ZFILM (Single) Features and benefits Low leakage current losses Negligible switching

More information

ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description.

ST1510FX. High voltage fast-switching NPN Power transistor. General features. Applications. Internal schematic diagram. Description. High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation

More information

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel

Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications

More information

BUX87. High voltage NPN power transistor. Features. Applications. Description

BUX87. High voltage NPN power transistor. Features. Applications. Description High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor

More information

MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications

MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation

More information

STX616. High voltage NPN power transistor. Features. Applications. Description

STX616. High voltage NPN power transistor. Features. Applications. Description STX616 High voltage NPN power transistor Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications Switching mode power supply Battery charger

More information