STGW35HF60WD. 35 A, 600 V ultra fast IGBT. Features. Applications. Description

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1 35 A, 600 V ultra fast IGBT Features Improved E off at elevated temperature Minimal tail current Low conduction losses V CE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode Applicatio Welding High frequency converters Power factor correction TO Description The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (E off ) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 khz). Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging GW35HF60WDA STGW35HF60WD GW35HF60WDB TO247 Tube GW35HF60WDC 1. Collectoremitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. May 2010 Doc ID Rev 5 1/

2 Electrical ratings STGW35HF60WD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = 0) 600 V (1) I C Continuous collector current at T C = 25 C 60 A (1) I C Continuous collector current at T C = 100 C 35 A I (2) CP Pulsed collector current 150 A (3) I CL Turnoff latching current 80 A V GE Gateemitter voltage ± 20 V I F Diode RMS forward current at T C = 25 C 30 A I FSM Surge non repetitive forward current t p = 10 ms sinusoidal 120 A P TOT Total dissipation at T C = 25 C 200 W T stg T j Storage temperature Operating junction temperature 1. Calculated according to the iterative formula: I C ( T C ) T jmax ( ) T = C R thj c V CE( sat) ( max) ( T jmax ( ), I C ( T C )) 2. Pulse width limited by maximum junction temperature and turnoff within RBSOA 3. V CLAMP = 80% (V CES ), V GE = 15 V, R G = 10 Ω, T J = 150 C 55 to 150 C Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase diode 1.5 C/W Thermal resistance junctioncase IGBT 0.63 C/W R thjamb Thermal resistance junctionambient 50 C/W 2/12 Doc ID Rev 5

3 Electrical characteristics 2 Electrical characteristics (T J = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 20 A 2.5 V GE = 15V, I C = 20 A,T J = 125 C 1.65 V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES I GES Collector cutoff current (V GE = 0) Gateemitter leakage current (V CE = 0) V CE = 600 V V CE = 600 V, T J = 125 C V µa ma V GE = ±20 V ± 100 na Table 5. V CE(sat) classification Symbol Parameter Group Min. Value Max. Unit V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 20 A A B C V Table 6. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gateemitter charge Gatecollector charge V CE = 400 V, I C = 20 A, V GE = 15 V, (see Figure 17) nc nc nc Doc ID Rev 5 3/12

4 Electrical characteristics STGW35HF60WD Table 7. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 400 V, I C = 20 A R G = 10 Ω, V GE = 15 V, (see Figure 16) A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 400 V, I C = 20 A R G = 10 Ω, V GE = 15 V, T J = 125 C (see Figure 16) A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CC = 400 V, I C = 20 A, R GE = 10 Ω, V GE = 15 V (see Figure 16) t r (V off ) t d ( off ) t f Off voltage rise time Turnoff delay time Current fall time V CC = 400 V, I C = 20 A, R GE = 10 Ω, V GE =15 V, T J = 125 C (see Figure 16) Table 8. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit (1) E on E off E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 400 V, I C = 20 A R G = 10 Ω, V GE = 15 V, (see Figure 18) µj µj µj (1) E on E off E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 400 V, I C = 20 A R G = 10 Ω, V GE = 15 V, T J = 125 C (see Figure 18) µj µj µj 1. Eon is the tunon losses when a typical diode is used in the test circuit in Figure 18. If the IGBT is offered in a package with a copak diode, the copack diode is used as external diode. IGBTs and diode are at the same temperature (25 C and 125 C). Eon include diode recovery energy. Table 9. Collectoremitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward onvoltage I F = 20 A I F = 20 A, T J = 125 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 50 V, di/dt = 100 A/µs (see Figure 19) nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 50 V, T J =125 C, di/dt = 100 A/µs (see Figure 19) nc A 4/12 Doc ID Rev 5

5 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics I 200 C (A) 150 V GE = 15 V 11 V 10 V I C 200 (A) 150 V CE = 10 V 9 V V V 50 0 V GE = 6 V V CE (V) V GE (V) 12 Figure 4. Normalized V CE(sat) vs. I C Figure 5. Normalized V CE(sat) vs. temperature V 1.6 CE(sat) (norm) 1.4 T J = 50 ºC V CE(sat) 1.6 (norm) 1.4 V GE = 15 V I C = 80 A T J = 25 ºC T J = 150 ºC A I C = 60 A I C = 40 A I C = 5 A 30 A 20 A 0.6 V GE = 15 V I C (A) T J ( C) 150 Figure 6. Normalized breakdown voltage vs. temperature Figure 7. Normalized gate threshold voltage vs. temperature V CES 1.1 (norm) V GE(th) 1.2 (norm) I C = 1 ma 0.8 V GE = V CE 0.7 I C = 250 µa T J 150 ( C) T J 150 ( C) Doc ID Rev 5 5/12

6 Electrical characteristics STGW35HF60WD Figure 8. Gate charge vs. gateemitter voltage Figure 9. Capacitance variatio V 16 GE (V) C 5000 (pf) 12 V CC = 400 V I C = 20 A 4000 f = 1 MHz V GE = C ies C oes Q G (nc) 0 C res V CE (V) 50 Figure 10. Switching losses vs temperature Figure 11. Switching losses vs. gate resistance E 450 (µj) E 2000 (µj) E ON 1500 E OFF E ON 300 E OFF V CE = 400 V, V GE = 15 V I C = 20 A, R G =10 Ω 500 V CE = 400 V, V GE = 15 V I C = 20 A, T J = 125 C T J 125 ( C) R g 240 (Ω) Figure 12. Switching losses vs. collector current Figure 13. Turnoff SOA E 1000 (µj) 1000 I C (A) 800 E ON E OFF V CE = 400 V, V GE = 15 V R G = 10 Ω, T J = 125 C 1 V GE = 15 V, R G = 10 Ω T C = 150 C I C 40 (A) V CE 1000 (V) 6/12 Doc ID Rev 5

7 Electrical characteristics Figure 14. Diode forward on voltage Figure 15. Thermal impedance Doc ID Rev 5 7/12

8 Test circuits STGW35HF60WD 3 Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit AM01504v1 AM01505v1 Figure 18. Switching waveform Figure 19. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF di/dt AM01506v1 AM01507v1 8/12 Doc ID Rev 5

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Doc ID Rev 5 9/12

10 Package mechanical data STGW35HF60WD TO247 Mechanical data Dim. mm. Min. Typ Max. A A b b b c D E e 5.45 L L L øp ør S /12 Doc ID Rev 5

11 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 14Apr Initial release. 03Aug Sep Sep Ierted dynamic parameters on Table 6 an Table 7 Document status promoted from preliminary data to datasheet Minor text changes throughout the document Removed watermark Ierted V CE(sat) grouping A, B and C (see Table 5: VCE(sat) classification) 10May Ierted Section 2.1: Electrical characteristics (curves) Doc ID Rev 5 11/12

12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 12/12 Doc ID Rev 5

STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description

STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application