STGW40S120DF3, STGWA40S120DF3

Transcription

1 STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time V CE(sat) = 1.65 V I C = 40 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode Applications Industrial drives UPS Solar Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW40S120DF3 G40S120DF3 TO-247 Tube STGWA40S120DF3 G40S120DF3 TO-247 long leads Tube December 2014 DocID Rev 2 1/18 This is information on a product in full production.

2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information TO-247, STGW40S120DF TO-247 long leads, STGWA40S120DF Revision history /18 DocID Rev 2

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 1200 V I C Continuous collector current at T C = 25 C 80 A I C Continuous collector current at T C = 100 C 40 A I (1) CP Pulsed collector current 160 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 C 80 A I F Continuous forward current at T C = 100 C 40 A (1) I FP Pulsed forward current 160 A P TOT Total dissipation at T C = 25 C 468 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.32 C/W R thjc Thermal resistance junction-case diode 0.74 C/W R thja Thermal resistance junction-ambient 50 C/W DocID Rev 2 3/18 18

4 Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 1200 V V GE = 15 V, I C = 40 A V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 40 A, T J =125 C V GE = 15 V, I C = 25 A T J = 175 C I F = 40 A V I F = 40 A T J = 125 C 2.25 V I F = 40 A T J = 175 C 2.1 V V GE(th) Gate threshold voltage V CE = V GE, I C = 2 ma V I CES Collector cut-off current (V GE = 0) V CE = 1200 V 25 µa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE =0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 960 V, I C =40 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/18 DocID Rev 2

5 Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs V CE = 600 V, I C = 40 A, t d(off) Turn-off delay time ns V GE = 15 V, R G = 15 Ω t f Current fall time ns (see Figure 29) E (1) on Turn-on switching losses mj E (2) off Turn-off switching losses mj E ts Total switching losses mj t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs t d(off) t f Turn-off delay time Current fall time V CE = 600 V, I C = 40 A, R G = 15 Ω, V GE = 15 V, T J = 175 C, (see Figure 29) ns ns (1) E on Turn-on switching losses mj E (2) off Turn-off switching losses mj E ts Total switching losses mj t sc Short-circuit withstand time V CC 600 V, V GE = 15 V, 10 - µs T Jstart 150 C, V P < 1200 V 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses also include the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 40 A, V R = 600 V, nc I rrm Reverse recovery current V GE = 15 V, A dl rr/ /dt di/dt = 1000 A/µs, Peak rate of fall of reverse (see Figure 29) recovery current during t b A/µs E rr Reverse recovery energy mj t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 40 A, V R = 600 V, nc I rrm Reverse recovery current V GE = 15 V, T J = 175 C, di/dt = 1000 A/µs, A di rr/ /dt Peak rate of fall of reverse (see Figure 29) recovery current during t b A/µs E rr Reverse recovery energy mj DocID Rev 2 5/18 18

6 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 4. Output characteristics (T J = 25 C) Figure 3. Collector current vs. case temperature Figure 5. Output characteristics (T J = 175 C) Figure 6. V CE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current 6/18 DocID Rev 2

7 Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area Figure 10. Transfer characteristics Figure 11. Diode V F vs. forward current Figure 12. Normalized V GE(th) vs. junction temperature Figure 13. Normalized V BR(CES) vs. junction temperature DocID Rev 2 7/18 18

8 Electrical characteristics Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage Figure 16. Switching loss vs. collector current Figure 17. Switching loss vs. gate resistance Figure 18. Switching loss vs. temperature Figure 19. Switching loss vs. collector emitter voltage 8/18 DocID Rev 2

9 Electrical characteristics Figure 20. Short-circuit time and current vs V GE Figure 21. Switching times vs. collector current Figure 22. Switching times vs. gate resistance Figure 23. Reverse recovery current vs. diode current slope Figure 24. Reverse recovery time vs. diode current slope Figure 25. Reverse recovery charge vs. diode current slope DocID Rev 2 9/18 18

10 Electrical characteristics Figure 26. Reverse recovery energy vs. diode current slope 10/18 DocID Rev 2

11 Electrical characteristics Figure 27. Thermal impedance for IGBT Figure 28. Thermal impedance for diode DocID Rev 2 11/18 18

12 Test circuits 3 Test circuits Figure 29. Test circuit for inductive load switching Figure 30. Gate charge test circuit AM01505v1 AM01504v1 Figure 31. Switching waveform Figure 32. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ts trr tf 10% IRRM VRRM t dv/dt AM01506v1 AM01507v1 12/18 DocID Rev 2

13 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO-247, STGW40S120DF3 Figure 33. TO-247 outline _H DocID Rev 2 13/18 18

14 Package information Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /18 DocID Rev 2

15 Package information 4.2 TO-247 long leads, STGWA40S120DF3 Figure 34. TO-247 long lead outline _A_F DocID Rev 2 15/18 18

16 Package information Table 9. TO-247 long leads mechanical data Dim. mm Min. Typ. Max. A A A b b b c D E E E e L L P Q S /18 DocID Rev 2

17 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 16-May Initial release. 18-Dec Updated Section 1: Electrical ratings and Section 2: Electrical characteristics. Inserted Section 2.1: Electrical characteristics (curves). Updated Section 4: Package information. DocID Rev 2 17/18 18

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