STGW60V60DF STGWT60V60DF

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1 1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off Low saturation voltage: V CE(sat) = 1.85 V I C = 6 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW6V6DF GW6V6DF TO-247 Tube STGWT6V6DF GWT6V6DF TO-3P Tube July 213 DocID24154 Rev 5 1/16 This is information on a product in full production. 16

2 Electrical ratings STGW6V6DF, STGWT6V6DF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = ) 6 V I C Continuous collector current at T C = 25 C 8 (1) A I C Continuous collector current at T C = 1 C 6 A I (2) CP Pulsed collector current 24 A V GE Gate-emitter voltage ±2 V I F Continuous forward current at T C = 25 C 8 (1) A I F Continuous forward current at T C = 1 C 6 A (2) I FP Pulsed forward current 24 A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range - 55 to 15 C T J Operating junction temperature - 55 to 175 C 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT.4 C/W R thjc Thermal resistance junction-case diode 1.14 C/W R thja Thermal resistance junction-ambient 5 C/W 2/16 DocID24154 Rev 5

3 STGW6V6DF, STGWT6V6DF Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = ) I C = 2 ma 6 V V GE = 15 V, I C = 6 A V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 6 A T J = 125 C V GE = 15 V, I C = 6 A T J = 175 C I F = 6 A V I F = 6 A T J = 125 C 1.7 V I F = 6 A T J = 175 C 1.6 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = ) V CE = 6 V 25 μa I GES Gate-emitter leakage current (V CE = ) V GE = ± 2 V 25 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 48 V, I C = 6 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc DocID24154 Rev 5 3/16

4 Electrical characteristics STGW6V6DF, STGWT6V6DF Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/μs V CE = 4 V, I C = 6 A, t d(off) Turn-off delay time ns R G = 4.7 Ω, V GE = 15 V, t f Current fall time ns see Figure 28 E (1) on Turn-on switching losses mj E (2) off Turn-off switching losses mj E ts Total switching losses mj t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/μs t d(off) Turn-off delay time V CE = 4 V, I C = 6 A, ns t f Current fall time R G = 4.7 Ω, V GE = 15 V, T J = 175 C, see Figure ns (1) E on Turn-on switching losses mj E (2) off Turn-off switching losses mj E ts Total switching losses mj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 6 A, V R = 4 V, nc I rrm Reverse recovery current V GE = 15 V, A di rr/ /dt di F /dt = 1 A/μs Peak rate of fall of reverse see Figure 28 recovery current during t b A/μs E rr Reverse recovery energy μj t rr Reverse recovery time ns Q rr Reverse recovery charge I F = 6 A, V R = 4 V, nc I rrm Reverse recovery current V GE = 15 V A di rr/ /dt di F /dt = 1 A/μs Peak rate of fall of reverse recovery current during t T J = 175 C, see Figure 28 b A/μs E rr Reverse recovery energy μj 4/16 DocID24154 Rev 5

5 STGW6V6DF, STGWT6V6DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. temperature case P tot (W) AM17139v1 I C (A) AM1714v VGE > _ 15 V, TJ < _ 175 C T C ( C) T C ( C) Figure 4. Output 25 C Figure 5. Output 175 C Ic (A) 2 T J =25 C 15 V 13 V AM17141v1 I C (A) 2 T J =175 C AM17142v1 15 V V V 11 V 1 9 V 1 9 V V V CE (V) V V CE (V) Figure 6. V CE(SAT) vs. junction temperature V CE(sat) AM17143v1 (V) V GE =15 V I C = 12 A I C = 6 A I C = 3 A T J (ºC) Figure 7. V CE(SAT) vs. collector current V CE (V) AM17144v1 V GE =15 V T J = 175 C T J = 25 C T J = - 4 C I C (A) DocID24154 Rev 5 5/16

6 Electrical characteristics STGW6V6DF, STGWT6V6DF Figure 8. Collector current vs. switching frequency Figure 9. Safe operating area Ic [A] Tc=1 C rectangular current shape, (duty cycle=.5, V CC = 4V, R G =4.7Ω, V GE = /15 V, T J =175 C) 1 1 Tc=8 C AM17145v1 f [khz] I C (A) (single pulse T C =25 C, T J <=175 C; V GE =15 V) 1 ms AM17146v1 1 μs 1 μs V CE (V) Figure 1. Transfer characteristics Figure 11. Diode V F vs. forward current I C (A) AM17146v1 V F (V) AM17148v C C C 175 C V GE (V) 25 C C I F (A) Figure 12. Normalized V GE(th) vs. junction temperature Figure 13. Normalized BV CES vs. junction temperature V GE(th) norm (V) 1.1 AM17149v1 VCE= VGE IC= 1 ma BVces norm (V) 1.1 I C = 2 ma AM1715v T J (ºC) T J (ºC) 6/16 DocID24154 Rev 5

7 STGW6V6DF, STGWT6V6DF Electrical characteristics Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage C (pf) AM17151v1 V GE (V) AM17152v1 1 C ies C res C oes f= 1MHz, V GE = V CE (V) Qg (nc) Figure 16. Switching losses vs. collector current Figure 17. Switching losses vs. gate resistance E (μj) AM17153v1 E (μj) AM17154v V CC 4V, V GE = 15V, Rg=4.7Ω, T J = 175 C E ON E OFF Ic (A) V CC =4V, V GE = 15V, I C = 6 A, T J = 175 C E ON E OFF R G (Ω) Figure 18. Switching losses vs. junction temperature E (μj) V CC =4V, V GE = 15V, I C = 6 A, Rg = 4.7Ω E ON E OFF AM17155v1 T J (ºC) Figure 19. Switching losses vs. collector emitter voltage E (μj) V GE = 15V, T J = 175 C I C = 6 A, Rg = 4.7 Ω E ON E OFF AM17156v Vce (V) DocID24154 Rev 5 7/16

8 Electrical characteristics STGW6V6DF, STGWT6V6DF Figure 2. Switching times vs. collector current Figure 21. Switching times vs. gate resistance (ns) V CC = 4V, V GE = 15V, Tj =175 C, Rg = 4.7 Ω AM17157v1 (ns) V CC = 4V, V GE = 15V, Tj =175 C Ic = 6 A AM17159v1 1 t doff t doff 1 t r t r t don 1 t don t f t f Ic (A) Rg (Ω) Figure 22. Reverse recovery current vs. diode current slope Figure 23. Reverse recovery time vs. diode current slope I rm (A) AM17158v1 trr (ns) AM1716v1 5 Vr = 4 V, I F = 6 A 2 V r = 4V, I F = 6 A C C 2 25 C C di/dt (A/μs) di/dt (A/μs) Figure 24. Reverse recovery charge vs. diode current slope Qrr (nc) Vr = 4V, I F = 6 A 175 C 25 C AM17161v di/dt (A/μs) Figure 25. Reverse recovery energy vs. diode current slope Err (μj) V CC = 4V, V GE = 15V, I F = 6A 175 C AM17162v C di/dt (A/μs) 8/16 DocID24154 Rev 5

9 STGW6V6DF, STGWT6V6DF Electrical characteristics K d=.5 Figure 26. Thermal data for IGBT ZthTO2T_A Single pulse tp (s) Figure 27. Thermal data for diode DocID24154 Rev 5 9/16

10 Test circuits STGW6V6DF, STGWT6V6DF 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit Figure 3. Switching waveform AM154v1 AM155v1 Figure 31. Diode recovery time waveform 9% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 1% 9% 1% 9% 1% IF IRRM ta trr tb IRRM t VF dv/dt AM156v1 AM157v1 1/16 DocID24154 Rev 5

11 STGW6V6DF, STGWT6V6DF Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c.4.8 D E e L L L P R S DocID24154 Rev 5 11/16

12 Package mechanical data STGW6V6DF, STGWT6V6DF Figure 32. TO-247 drawing 75325_G 12/16 DocID24154 Rev 5

13 STGW6V6DF, STGWT6V6DF Package mechanical data Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A A A b b b c D D E E E2 9.6 e L L1 3.5 L øp Q 5 Q1 3.8 DocID24154 Rev 5 13/16

14 Package mechanical data STGW6V6DF, STGWT6V6DF Figure 33. TO-3P drawing 84595_A 14/16 DocID24154 Rev 5

15 STGW6V6DF, STGWT6V6DF Revision history 5 Revision history Table 1. Document revision history Date Revision Changes 15-Jan Initial release. 23-Apr Added: New order code STGWT6V6DF and new package mechanical data TO-3P Table 9 on page 13, Figure 33 on page 14. Section 2.1: Electrical characteristics (curves) on page 5. 4-Jun Updated Table 4: Static characteristics and Figure 12 on page 6. Document status changed from preliminary to production data. 21-Jun Updated Figure 3: Collector current vs. temperature case. 12-Jul Updated R thjc value for Diode in Table 3: Thermal data. DocID24154 Rev 5 15/16

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Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off