Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary

Transcription

1 Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Figure 1: Internal schematic diagram Applications Motor control UPS PFC General purpose inverter Table 1: Device summary Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code Marking Package Packing STGYA120M65DF2 G120M65DF2 Max247 long leads Tube September 2017 DocID Rev 5 1/17 This is information on a product in full production.

2 Contents STGYA120M65DF2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information Max247 long leads package information Revision history /17 DocID Rev 5

3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC (1) Continuous collector current at TC = 25 C 160 IC Continuous collector current at TC = 100 C 120 A ICP (2) Pulsed collector current 360 A VGE Gate-emitter voltage ± 20 V IF (1) Continuous forward current at TC = 25 C 160 IF Continuous forward current at TC = 100 C 120 A IFP (2) Pulsed forward current 360 A PTOT Total dissipation at TC = 25 C 625 W TSTG Storage temperature range - 55 to 150 TJ Operating junction temperature range - 55 to 175 C Notes: (1) Current level is limited by bond wires. (2) Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.24 RthJC Thermal resistance junction-case diode 0.6 C/W RthJA Thermal resistance junction-ambient 50 DocID Rev 5 3/17

4 Electrical characteristics STGYA120M65DF2 2 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES VCE(sat) VF Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 250 µa 650 V VGE = 15 V, IC = 120 A VGE = 15 V, IC = 120 A, TJ = 125 C VGE = 15 V, IC = 120 A, TJ = 175 C IF = 120 A IF = 120 A, TJ = 125 C 1.7 IF = 120 A, TJ = 175 C 1.6 VGE(th) Gate threshold voltage VCE = VGE, IC = 2 ma V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µa IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ± 250 V V µa Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V Reverse transfer Cres capacitance Qg Total gate charge VCC = 520 V, IC = 120 A, Qge Gate-emitter charge VGE = 0 to 15 V (see Figure 30: " Gate charge test Qgc Gate-collector charge circuit") nf nc 4/17 DocID Rev 5

5 Table 6: IGBT switching characteristics (inductive load) Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time 66 - ns tr Current rise time 38 - ns (di/dt)on Turn-on current slope A/µs VCE = 400 V, IC = 120 A, td(off) Turn-off-delay time VGE = 15 V, RG = 4.7 Ω ns tf Current fall time (see Figure 29: " Test circuit 85 - ns for inductive load switching" ) Eon (1) Turn-on switching energy mj Eoff (2) Turn-off switching energy mj Ets Total switching energy mj td(on) Turn-on delay time 62 - ns tr Current rise time 48 - ns (di/dt)on Turn-on current slope VCE = 400 V, IC = 120 A, A/µs VGE = 15 V, RG = 4.7 Ω td(off) Turn-off-delay time ns TJ = 175 C (see Figure 29: " tf Current fall time Test circuit for inductive load ns Eon (1) Turn-on switching energy switching" ) mj Eoff (2) Turn-off switching energy mj Ets Total switching energy mj tsc Notes: Short-circuit withstand time (1) Including the reverse recovery of the diode. (2) Including the tail of the collector current. VCC 400 V, VGE = 13 V, TJstart = 150 C VCC 400 V, VGE = 15 V, TJstart = 150 C µs Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ns Qrr Reverse recovery charge IF = 120 A, VR = 400 V, µc VGE = 15 V, Irrm Reverse recovery current di/dt = 1000 A/µs A Peak rate of fall of reverse dirr/dt (see Figure 29: " Test circuit A/µs recovery current during tb for inductive load switching") Err Reverse recovery energy µj trr Reverse recovery time ns IF = 120 A, VR = 400 V, Qrr Reverse recovery charge VGE = 15 V, µc Irrm Reverse recovery current di/dt = 1000 A/µs, A TJ = 175 C Peak rate of fall of reverse dirr/dt (see Figure 29: " Test circuit A/µs recovery current during tb for inductive load switching") Err Reverse recovery energy µj DocID Rev 5 5/17

6 Electrical characteristics STGYA120M65DF2 2.1 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 C) Figure 5: Output characteristics (TJ = 175 C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current 6/17 DocID Rev 5

7 Figure 8: Collector current vs. switching frequency Electrical characteristics Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID Rev 5 7/17

8 Electrical characteristics Figure 14: Capacitance variations STGYA120M65DF2 Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage 8/17 DocID Rev 5

9 Figure 20: Short circuit time and current vs. VGE Electrical characteristics Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope DocID Rev 5 9/17

10 Electrical characteristics Figure 26: Reverse recovery energy vs. diode current slope STGYA120M65DF2 10/17 DocID Rev 5

11 Electrical characteristics Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode DocID Rev 5 11/17

12 Test circuits STGYA120M65DF2 3 Test circuits Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit C A A G L=100 µh E B B G C 3.3 µf D.U.T 1000 µf V CC + R G E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform 12/17 DocID Rev 5

13 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DocID Rev 5 13/17

14 Package information 4.1 Max247 long leads package information Figure 33: Max247 long leads package outline STGYA120M65DF2 Section C-C, D-D, E-E DM _Rev_A 14/17 DocID Rev 5

15 Dim. Package information Table 8: Max247 long leads package mechanical data mm Min. Typ. Max. A A A a a' b b b b b b b b c c D D D D E E E e L L M P R T U DocID Rev 5 15/17

16 Revision history STGYA120M65DF2 5 Revision history Table 9: Document revision history Date Revision Changes 06-Apr First release. 10-May Jun Aug Sep Document status promoted to production data. Added Section 2.1: "Electrical characteristics (curves)" Updated Figure 1: "Internal schematic diagram" and Table 2: "Absolute maximum ratings". Updated Section 2.1: "Electrical characteristics (curves)". Minor text changes. Updated Table 7: "Diode switching characteristics (inductive load)" and Figure 25: Reverse recovery charge vs. diode current slope. Minor text changes. Updated title, features and application in cover page. Updated Figure 13: "Normalized V(BR)CES vs. junction temperature". Minor text changes. 16/17 DocID Rev 5

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