STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB

Size: px

Start display at page:

Download "STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB"

Annice Smith
6 years ago
Views:

1 STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series TO TO-3P 2 3 Minimized tail current V CE(sat) = 1.6 V I C = 60 A Tight parameters distribution Safe paralleling Low thermal resistance TO-247 long leads Very fast soft recovery antiparallel diode Applications Figure 1. Internal schematic diagram C (2, TAB) Photovoltaic inverters High frequency converters G (1) E (3) Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW60H65DFB GW60H65DFB TO-247 Tube STGWA60H65DFB G60H65DFB TO-247 long leads Tube STGWT60H65DFB GWT60H65DFB TO-3P Tube April 2015 DocID Rev 7 1/19 This is information on a product in full production. 19

2 Contents STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information TO-247 package information TO-247 long leads package information TO-3P package information Revision history /19 DocID Rev 7

3 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 25 C 80 (1) A I C Continuous collector current at T C = 100 C 60 A I (2) CP Pulsed collector current 240 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 C 80 (1) A I F Continuous forward current at T C = 100 C 60 A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.4 C/W R thjc Thermal resistance junction-case diode 1.14 C/W R thja Thermal resistance junction-ambient 50 C/W DocID Rev 7 3/19

4 Electrical characteristics STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 650 V V GE = 15 V, I C = 60 A V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 60 A T J = 125 C V GE = 15 V, I C = 60 A T J = 175 C I F = 60 A V I F = 60 A T J = 125 C 1.7 V I F = 60 A T J = 175 C 1.6 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = 0) V CE = 650 V 25 µa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V ±250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 520 V, I C = 60 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/19 DocID Rev 7

5 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 66 ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs V CE = 400 V, I C = 60 A, t d(off) Turn-off delay time 210 ns R G = 10 Ω, V GE = 15 V, t f Current fall time ns see Figure 28 E (1) on Turn-on switching losses µj E (2) off Turn-off switching losses µj E ts Total switching losses µj t d(on) Turn-on delay time - 59 ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs t d(off) Turn-off delay time V CE = 400 V, I C = 60 A, 242 ns t f Current fall time R G = 10 Ω, V GE = 15 V, T J = 175 C, see Figure ns (1) E on Turn-on switching losses µj E (2) off Turn-off switching losses µj E ts Total switching losses µj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time ns Q rr Reverse recovery charge nc I rrm Reverse recovery current I F = 60 A, V R = 400 V, di/dt = 100A/µs, V GE = 15 V, A di rr/ /dt Peak rate of fall of reverse see Figure 28 recovery current during t b A/µs E rr Reverse recovery energy µj t rr Reverse recovery time ns Q rr Reverse recovery charge nc I rrm Reverse recovery current I F = 60 A, V R = 400 V, di/dt = 100A/µs, V GE = 15 V, A di rr/ /dt Peak rate of fall of reverse recovery current during t b T J = 175 C, see Figure A/µs E rr Reverse recovery energy µj DocID Rev 7 5/19

6 Electrical characteristics STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 2.1 Electrical characteristics (curves) Figure 2. Output characteristics (T J = 25 C) Figure 3. Output characteristics (T J = 175 C) Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature IC (A) 80 GIPD FSR VGE = 15V, TJ = 175 C TC( C) Figure 6. Power dissipation vs. case temperature Figure 7. V CE(sat) vs. junction temperature Ptot (W) GIPD FSR VCE(sat) (V) 2.6 VGE= 15V GIPD FSR IC= 120A IC= 60A VGE = 15V, TJ = 175 C IC= 30A TC( C) Tj( C) 6/19 DocID Rev 7

7 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Figure 8. V CE(sat) vs. collector current VCE(sat) (V) GIPD FSR VGE= 15V TJ= 25 C 1.8 TJ= 175 C 1.6 TJ= -40 C IC(A) Figure 10. Diode V F vs. forward current Figure 9. Forward bias safe operating area Figure 11. Normalized V (BR)CES vs. junction temperature V(BR)CES (norm) GIPD FSR 1.1 IC= 2mA TJ( C) Figure 12. Normalized V GE(th) vs. junction temperature Figure 13. Gate charge vs. gate-emitter voltage VGE(th) (norm) 1.0 IC= 1mA GIPD FSR VGE (V) VCC= 520V, IC= 60A, IG= 1mA GIPD FSR TJ( C) Qg(nC) DocID Rev 7 7/19

8 Electrical characteristics STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Figure 14. Switching losses vs temperature Figure 15. Switching losses vs gate resistance E (μj) GIPD FSR E(μJ) GIPD FSR VCC= 400V, VGE= 15V Rg= 10Ω, IC= 60A EON EON EOFF EOFF VCC = 400V, VGE = 15V IC = 60A, TJ = 175 C TJ( C) RG(Ω) Figure 16. Switching losses vs collector current Figure 17. Switching losses vs collector emitter voltage E (μj) 7000 VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175 C GIPD FSR E (μj) 4300 TJ= 175 C, VGE= 15V Rg= 10Ω, IC= 60A GIPD FSR EON EON EOFF 2300 EOFF IC(A) Figure 18. Switching times vs collector current VCE(V) Figure 19. Switching times vs gate resistance t (ns) tdoff GIPD FSR t (ns) TJ= 175 C, VGE= 15V IC= 60A, VCC= 400V GIPD FSR 100 tdon tdoff 100 tr tdon 10 tf tf TJ= 175 C, VGE= 15V Rg= 10Ω, VCC= 400V IC(A) tr Rg(Ω) 8/19 DocID Rev 7

9 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Figure 20. Reverse recovery current vs. diode current slope Figure 21. Reverse recovery time vs. diode current slope Irm (A) Vr= 400V, IF= 60A TJ= 175 C GIPD FSR trr (ns) Vr= 400V, IF= 60A GIPD FSR TJ= 25 C TJ= 175 C TJ= 25 C di/dt(a/μs) Figure 22. Reverse recovery charge vs. diode current slope di/dt(a/μs) Figure 23. Reverse recovery energy vs. diode current slope Qrr (nc) Vr= 400V, IF= 60A GIPD FSR Err (μj) GIPD FSR TJ= 175 C TJ= 175 C Vr= 400V, IF= 60A TJ= 25 C TJ= 25 C di/dt(a/μs) Figure 24. Capacitance variations di/dt(a/μs) Figure 25. Collector current vs. switching frequency C(pF) GIPD FSR Ic (A) GIPD FSR f = 1 MHz Cies 100 Tc=80 C Tc=100 C 100 Coes Cres VCE(V) 40 rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=10 Ω, V GE = 0/15 V, T J =175 C) f (khz) DocID Rev 7 9/19

10 Electrical characteristics STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Figure 26. Thermal impedance for IGBT K d=0.5 ZthTO2T_A Single pulse tp (s) Figure 27. Thermal impedance for diode 10/19 DocID Rev 7

11 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit k k k k k k AM01504v1 AM01505v1 Figure 30. Switching waveform Figure 31. Diode reverse recovery waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ts trr tf 10% IRRM VRRM t dv/dt AM01506v1 AM01507v1 DocID Rev 7 11/19

12 Package information STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 32. TO-247 package outline _H 12/19 DocID Rev 7

13 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Package information Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S DocID Rev 7 13/19

14 Package information STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 4.2 TO-247 long leads package information Figure 33. TO-247 long leads package outline _A_F 14/19 DocID Rev 7

15 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Package information Table 9. TO-247 long leads mechanical data Dim. mm Min. Typ. Max. A A A b b b c D E E E e L L P Q S DocID Rev 7 15/19

16 Package information STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 4.3 TO-3P package information Figure 34. TO-3P package outline _B 16/19 DocID Rev 7

17 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Package information Table 10. TO-3P mechanical data Dim. mm Min. Typ. Max. A A A b b b c D D E E E e L L L øp øp Q Q DocID Rev 7 17/19

18 Revision history STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB 5 Revision history Table 11. Document revision history Date Revision Changes 12-Mar Initial release. 30-Aug Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). 31-Oct Updated V CE(sat) in Table 4: Static characteristics. 24-Feb Updated title and description in cover page. 09-Jan Mar Apr Updated features in cover page, Table 2: Absolute maximum ratings, and Table 6: IGBT switching characteristics (inductive load). Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 8: V CE(sat) vs. collector current, Figure 18: Switching times vs collector current, Figure 19: Switching times vs gate resistance and Figure 20: Reverse recovery current vs. diode current slope. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. Text edits throughout document. In document, added new order code STGWA60H65DFB in TO-247 long leads package, with accompanying information and data. In Section 2.1: Electrical characteristics (curves): - updated Figure 2, Figure 3, Figure 4, Figure 7, Figure 9 Text edits throughout document. In Section 2: Electrical characteristics: - updated Table 4: Static characteristics - updated Table 6: IGBT switching characteristics (inductive load) In Section 2.1: Electrical characteristics (curves): - updated Figure 3 and Figure 9 18/19 DocID Rev 7

19 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 7 19/19

STGW60H65FB STGWT60H65FB

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized