STGB20H60DF, STGF20H60DF, STGP20H60DF

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1 STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB Features High speed switching Tight parameters distribution TO TO-220FP Safe paralleling Low thermal resistance Short-circuit rated TAB Ultrafast soft recovery antiparallel diode D²PAK 3 1 Applications Motor control UPS, PFC Figure 1. Internal schematic diagram G (1) C (2, TAB) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGB20H60DF GB20H60DF D²PAK Tape and reel STGF20H60DF GF20H60DF TO-220FP Tube STGP20H60DF GP20H60DF TO-220 Tube June 2013 DocID Rev 4 1/22 This is information on a product in full production. 22

2 Contents STGB20H60DF, STGF20H60DF, STGP20H60DF Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /22 DocID Rev 4

3 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter TO-220 D²PAK TO-220FP Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 100 C (1) A Continuous collector current at T C = 25 C (1) A (2) I CP Pulsed collector current (1) A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 100 C (1) Continuous forward current T C = 25 C (1) A (2) I FP Pulsed forward current (1) A P TOT Total dissipation at T C = 25 C W T STG Storage temperature range - 55 to 150 T J Operating junction temperature - 55 to 175 C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol Parameter TO-220 D²PAK TO-220FP Unit R thjc Thermal resistance junction-case IGBT C/W R thjc Thermal resistance junction-case diode C/W R thja Thermal resistance junction-ambient 62.5 C/W DocID Rev 4 3/22

4 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 20 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A T J = 125 C V GE = 15 V, I C = 20 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 400 V, I C = 20 A, V GE = 15 V nc Q gc Gate-collector charge nc 4/22 DocID Rev 4

5 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time V CE = 400 V, I C = 20 A, R G = 10 Ω, V GE = 15 V ns (di/dt)on Turn-on current slope A/μs t d(on) Turn-on delay time V CE = 400 V, I C = 20 A, ns t r Current rise time R G = 10 Ω, V GE = 15 V 13.4 ns (di/dt)on Turn-on current slope T J = 175 C 1180 A/μs t r(voff) Off voltage rise time 20 - ns t d(off) Turn-off delay time V CE = 400 V, I C = 20 A, R G = 10 Ω, V GE = 15 V ns t f Current fall time 55 - ns t r(voff) Off voltage rise time V CE = 400 V, I C = 20 A, 26 - ns t d(off) Turn-off delay time R G = 10 Ω, V GE = 15 V ns t f Current fall time T J = 175 C 86 - ns t sc Short-circuit withstand time V CC 360 V, V GE = 15 V μs Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Turn-on switching losses μj V CE = 400 V, I C = 20 A, E (2) off Turn-off switching losses R G = 10 Ω, V GE = 15 V μj E ts Total switching losses μj Eon (1) Turn-on switching losses V CE = 400 V, I C = 20 A, μj E (2) off Turn-off switching losses R G = 10 Ω, V GE = 15 V μj E ts Total switching losses T J = 175 C μj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID Rev 4 5/22

6 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit V F Forward on-voltage I F = 20 A I F = 20 A, T J = 175 C V V t rr Reverse recovery time ns Q rr Reverse recovery charge V r = 60 V; IF = 20 A; di F /dt = 100 A / μs 110 nc I rrm Reverse recovery current 2.4 A t rr Reverse recovery time V r = 60 V; IF = 20 A; ns Q rr Reverse recovery charge di F /dt = 100 A / μs nc I rrm Reverse recovery current T J = 175 C A 6/22 DocID Rev 4

7 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics (T J = 25 C) Figure 3. Output characteristics (T J = 175 C) IC (A) V AM16287v1 IC (A) V 11 V AM16288v V 13 V V V 40 9 V V VCE(V) Figure 4. Transfer characteristics VCE(V) Figure 5. Normalized V GE(th) vs junction temperature IC (A) -40 C AM16289v1 VGE(th) (norm) AM16292v VCE= 5 V 25 C 175 C VCE= VGE IC = 1 ma VGE(V) TJ( C) DocID Rev 4 7/22

8 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 6. Collector current vs. case temperature for D²PAK and TO-220 Figure 7. Collector current vs. case temperature for TO-220FP IC (A) AM16282v1 IC (A) AM162821v TC( C) Figure 8. Collector current vs. frequency for D²PAK and TO TC( C) Figure 9. Collector current vs. frequency for TO-220FP IC (A) AM162981V1 IC (A) AM162982V Tc= 100 C Tc= 80 C Tc= 100 C Tc= 80 C Rectangular current shape (duty cycle= 0.5, VCC= 400 V Rg = 10 Ω, VGE= 0/15V, TJ= 175 C f(khz) Figure 10. Power dissipation vs. case temperature for D²PAK and TO Rectangular current shape (duty cycle= 0.5, VCC= 400 V Rg = 10 Ω, VGE= 0/15V, TJ= 175 C f(khz) Figure 11. Power dissipation vs. case temperature for TO-220FP Ptot (W) AM16281V1 Ptot (W) AM16284V TC( C) TC( C) 8/22 DocID Rev 4

9 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics Figure 12. V CE(sat) vs. junction temperature Figure 13. V CE(sat) vs. collector current VCE(sat) (V) VGE= 15 V IC= 40 A AM16290V1 VCE(sat) (V) 2.2 VGE= 15 V TJ = 25 C TJ = 175 C AM16291V IC= 20 A IC= 10 A 1.4 TJ = -40 C TJ( C) Figure 14. Forward bias safe operating area for D 2 PAK and TO IC(A) Figure 15. Thermal impedance for D 2 PAK and TO-220 IC (A) 10 1 VCE(sat) limit AM16280V1 100 µs 1 ms K 10-1 δ= ZthTO2T_B Zth=k Rthj-c δ=tp/τ (single pulse TC=25 C, TJ<=175 C; VGE=15V) VCE(V) Figure 16. Forward bias safe operating area for TO-220FP Single pulse tp(s) Figure 17. Thermal impedance for TO-220FP tp τ IC (A) VCE(sat) limit AM16283V1 1 µs K δ= ZthTOF2T_B µs ms Zth=k Rthj-c δ=tp/τ (single pulse TC=25 C, TJ<=175 C; VGE=15V) Single pulse tp τ VCE(V) tp(s) DocID Rev 4 9/22

10 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 18. Diode V F vs. forward current Figure 19. Gate charge vs. gate-emitter voltage VF (V) 2.3 TJ= -40 C AM16293V1 VGE (V) 16 VCC= 400 V IC= 20 A AM16294V1 1.9 TJ= 25 C TJ= 175 C IF(A) Figure 20. Capacitance variations vs. V CE Qg(nC) Figure 21. Switching losses vs. gate resistance C (pf) 1000 Cies AM16295V1 E (µj) 750 EON AM16296V Coes 550 EOFF Cres VCE(V) 450 VCC= 400 V, VGE = 15V, IC = 20 A, TJ = 175 C 1 Figure 22. Switching losses vs. collector current RG(Ω) Figure 23. Switching losses vs. temperature E (µj) AM162961V1 E (µj) AM16297V EON EOFF 600 EON EOFF VCC= 400 V, VGE = 15V, Rg = 10 Ω, TJ = 175 C IC(A) VCC= 400 V, VGE = 15V, Rg = 10 Ω, IC = 20 A TJ( C) 10/22 DocID Rev 4

11 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics Figure 24. Short-circuit time and current vs. V GE tsc (µs) AM16298V1 Isc (A) 16 tsc Isc VCC= 360 V, Rg = 10 Ω VGE(V) DocID Rev 4 11/22

12 Test circuits STGB20H60DF, STGF20H60DF, STGP20H60DF 3 Test circuits Figure 25. Test circuit for inductive load switching Figure 26. Gate charge test circuit Figure 27. Switching waveform AM01504v1 AM01505v1 Figure 28. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF dv/dt AM01506v1 AM01507v1 12/22 DocID Rev 4

13 STGB20H60DF, STGF20H60DF, STGP20H60DF Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia DocID Rev 4 13/22

14 Package mechanical data STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 29. TO-220FP drawing _Rev_K_B 14/22 DocID Rev 4

15 STGB20H60DF, STGF20H60DF, STGP20H60DF Package mechanical data Table 10. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q DocID Rev 4 15/22

16 Package mechanical data STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 30. TO-220 type A drawing 16/22 DocID Rev 4

17 STGB20H60DF, STGF20H60DF, STGP20H60DF Package mechanical data Table 11. D²PAK mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 4 17/22

18 Package mechanical data STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 31. D²PAK drawing _T Figure 32. D²PAK footprint (a) Footprint a. All dimension are in millimeters 18/22 DocID Rev 4

19 STGB20H60DF, STGF20H60DF, STGP20H60DF Packaging mechanical data 5 Packaging mechanical data Table 12. D²PAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 4 19/22

20 Packaging mechanical data STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 33. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 REEL DIMENSIONS Figure 34. Reel 40mm min. T Access hole At sl ot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID Rev 4

21 STGB20H60DF, STGF20H60DF, STGP20H60DF Revision history 6 Revision history Table 13. Document revision history Date Revision Changes 03-Oct Initial release. 18-Mar Added new order code STGF20H60DF, mechanical data Table 9 and Figure 29 on page 14. Added Chapter 2.1: Electrical characteristics (curves). 22-Mar Document status promoted from preliminary to production data. 03-Jun Updated P TOT in Table 2: Absolute maximum ratings, R thjc in Table 3: Thermal data and Figure 10: Power dissipation vs. case temperature for D²PAK and TO-220. Updated Section 4: Package mechanical data for TO-220. DocID Rev 4 21/22

22 STGB20H60DF, STGF20H60DF, STGP20H60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 22/22 DocID Rev 4

STGW28IH125DF STGWT28IH125DF

STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized