STGB40V60F, STGP40V60F, STGW40V60F
|
|
- Christiana Williams
- 6 years ago
- Views:
Transcription
1 STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB 1 D 2 PAK 3 TAB TO-247 Figure 1. Internal schematic diagram C or TAB TO Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching off Low saturation voltage: V CE(sat) = 1.8 V I C = 40 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters G E Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB40V60F GB40V60F D 2 PAK Tape and reel STGP40V60F GP40V60F TO-220 Tube STGW40V60F GW40V60F TO-247 Tube June 2013 DocID Rev 1 1/19 This is information on a product in full production. 19
2 Contents STGB40V60F, STGP40V60F, STGW40V60F Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /19 DocID Rev 1
3 STGB40V60F, STGP40V60F, STGW40V60F Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 C 80 A I C Continuous collector current at T C = 100 C 40 A I (1) CP Pulsed collector current 160 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C 283 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.53 C/W R thja Thermal resistance junction-ambient 50 C/W DocID Rev 1 3/19
4 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 40 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 40 A T J = 125 C V GE = 15 V, I C = 40 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 480 V, I C = 40 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/19 DocID Rev 1
5 STGB40V60F, STGP40V60F, STGW40V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) (1) t r (1) Turn-on delay time ns Current rise time ns (di/dt) (1) on Turn-on current slope A/μs V CE = 400 V, I C = 40 A, t d ( off ) Turn-off delay time ns R G = 10 Ω, V GE = 15 V, t f Current fall time ns see Figure 22 E (1) on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj (1) t d(on) Turn-on delay time ns t (1) r Current rise time ns (1) (di/dt) on Turn-on current slope A/μs t d ( off ) t f Turn-off delay time Current fall time V CE = 400 V, I C = 40 A, R G = 10 Ω, V GE = 15 V, T J = 175 C, see Figure ns ns (1) E on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj 1. Switching-on times and energy have been calculated applying the STGW60V60DF's co-pack diode in the high side of the test circuit in Figure 22. Both IGBT and diode are at the same temperature. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature Ptot (W) 250 AM17385v1 IC (A) AM17386v TC( C) TC( C) DocID Rev 1 5/19
6 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F Figure 4. Output characteristics (T J =25 C) Figure 5. Output characteristics (T J =175 C) IC (A) VGE=15V 11V 13V 9V AM17387v1 IC (A) VGE=15V 13V 11V 9V AM17388v V VCE(V) VCE(V) Figure 6. V CE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current VCE(sat) (V) VGE=15V IC=80A AM17389v1 VCE(sat) (V) VGE=15V Tj=175 C AM17390v IC=40A IC=20A Tj=25 C Tj=-40 C TC( C) IC(A) Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area IC (A) AM17391v1 IC (A) AM17392v TC=80 C TC=100 C rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175 C) Single pulse, Tc=25 C Tj<175 C, VGE=15V 10μs 100μs 1ms f(khz) VCE(V) 6/19 DocID Rev 1
7 STGB40V60F, STGP40V60F, STGW40V60F Electrical characteristics Figure 10. Normalized V GE(th) vs junction temperature Figure 11. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1.0 VCE=VGE IC=1mA AM17395v1 V(BR)CES (norm) 1.1 IC=2mA AM17396v TC( C) TC( C) Figure 12. Capacitance variations Figure 13. Gate charge vs. gate-emitter voltage C(pF) AM17397v1 VGE(V) AM17398v Cies Cres Coes VCE(V) Figure 14. Switching losses vs. collector current Qg(nC) Figure 15. Switching losses vs. gate resistance E(μJ) 2800 VCC=400V, VGE=15V Rg=10Ω, Tj=175 C Eon AM17399v1 E(μJ) 2300 VCC=400V, VGE=15V IC=40A, Tj=175 C Eon AM17400v Eoff Eoff IC(A) Rg(Ω) DocID Rev 1 7/19
8 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F Figure 16. Switching losses vs. junction temperature Figure 17. Switching losses vs. collector emitter voltage E(μJ) 1300 VCC=400V, VGE=15V IC=40A, Rg=10Ω Eon AM17401v1 E(μJ) 1600 VGE=15V, Tj=175 C IC=40A, Rg=10Ω Eon AM17402v Eoff TJ( C) Figure 18. Switching times vs. collector current 800 Eoff VCE(V) Figure 19. Switching times vs. gate resistance t(ns) VCC=400V, VGE=15V Tj=175 C, Rg=10Ω tdoff AM17403v1 t(ns) 1000 VCC=400V VGE=15V Tj=175 C IC=40A AM17404v1 100 tdon 100 tdoff tdon tr tr tf tf IC(A) Figure 20. Transfer characteristics Rg(Ω) Figure 21. Thermal data IC (A) AM17393v1 Tj=-40 C Tj=175 C Tj=25 C 8 10 VGE(V) K 10-1 δ= Single pulse Zth=k Rthj-c δ=tp/t tp(s) tp t ZthTO2T_B 8/19 DocID Rev 1
9 STGB40V60F, STGP40V60F, STGW40V60F Test circuits 3 Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit AM01504v1 AM01505v1 Figure 24. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01506v1 DocID Rev 1 9/19
10 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 7. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /19 DocID Rev 1
11 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 25. D²PAK (TO-263) drawing _T Figure 26. D²PAK footprint (a) Footprint a. All dimension are in millimeters DocID Rev 1 11/19
12 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F Table 8. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /19 DocID Rev 1
13 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 27. TO-220 type A drawing DocID Rev 1 13/19
14 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F Table 9. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /19 DocID Rev 1
15 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 28. TO-247 drawing _G DocID Rev 1 15/19
16 Packaging mechanical data STGB40V60F, STGP40V60F, STGW40V60F 5 Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /19 DocID Rev 1
17 STGB40V60F, STGP40V60F, STGW40V60F Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 REEL DIMENSIONS Figure 30. Reel 40mm min. T Access hole At slot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID Rev 1 17/19
18 Revision history STGB40V60F, STGP40V60F, STGW40V60F 6 Revision history Table 11. Document revision history Date Revision Changes 04-Jun Initial release. 18/19 DocID Rev 1
19 STGB40V60F, STGP40V60F, STGW40V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID Rev 1 19/19
Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube
TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off
More informationSTGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
More informationSTGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
More informationSTGW28IH125DF STGWT28IH125DF
STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized
More informationSTGW60V60DF STGWT60V60DF
1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series
More informationSTGW60H65DFB STGWT60H65DFB
STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail
More informationSTGFW20H65FB, STGW20H65FB, STGWT20H65FB
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB 3 2 1 TO-3P 1 1 2 3 2 1 TO-3PF Figure 1. Internal schematic
More informationSTGW60H65FB STGWT60H65FB
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationSTGB20N40LZ, STGD20N40LZ
STGBN40LZ, STGDN40LZ Automotive-grade 390 V internally clamped IGBT E SCIS 300 mj Features Datasheet - production data TAB 1 D 2 PAK 3 TAB 1 DPAK 3 Designed for automotive applications and AEC-Q101 qualified
More informationSTGB20H60DF, STGF20H60DF, STGP20H60DF
STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB Features High speed switching Tight parameters distribution TO-220 1 2 3 TO-220FP
More informationMJB44H11T4-A. Automotive-grade low voltage NPN power transistor. Features. Applications. Description
Automotive-grade low voltage NPN power transistor Features Datasheet - production data TAB Designed for automotive applications and AEC- Q101 qualified Low collector-emitter saturation voltage Fast switching
More informationSTGW60H65DFB, STGWA60H65DFB STGWT60H65DFB
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching
More informationSTGW38IH130D, STGWT38IH130D
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationObsolete Product(s) - Obsolete Product(s)
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationSTGW15H120DF2, STGWA15H120DF2
STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationObsolete Product(s) - Obsolete Product(s)
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology Peak collector current I
More informationTrench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)
More informationObsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications
STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationAutomotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed. Features. Ignition. Description
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Features AEC-Q101 qualified Maximum junction temperature: TJ = 175 C Logic level
More informationSTGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description
5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features Maximum junction temperature:
More informationSTGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
More informationSTGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
More informationSTR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and
More informationSTB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
More informationSTGB14NC60K STGD14NC60K
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio (
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationSTGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description
STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationSTGW30N120KD STGWA30N120KD
STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged
More informationSTR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape
More informationObsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES
More informationAutomotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.
Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
More informationDual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
More informationSTGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description
60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application
More informationSTGW40H120DF2, STGWA40H120DF2
STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
More informationSTGB7NC60HD, STGF7NC60HD, STGP7NC60HD
STGB7NC60HD, STGF7NC60HD, STGP7NC60HD N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Datasheet production data Features Low on-voltage drop (V CE(sat) ) Off losses include tail current Losses
More informationFeatures. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed in TO247-4 package Datasheet - production data Features VCE(sat) = 1.6 V (typ.) @ IC = 80 A Maximum junction temperature: TJ = 175 C High speed
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationSTN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is
More informationSTGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description
30 A, 600 V ultra fast IGBT Features High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency motor
More informationOrder codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube
STGB19NC60H, STGP19NC60H STGW19NC60H 19 A 600 V very fast IGBT Features Low onvoltage drop (V CE(sat) ) High frequency operation Applicatio High frequency motor drives TO247 1 2 3 TAB 1 2 3 SMPS and PFC
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationMMBTA42. Small signal NPN transistor. Features. Applications. Description
Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure
More informationSTGFW40V60DF, STGW40V60DF, STGWT40V60DF
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 3 2 1 TO-3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C High speed
More informationSTGBL6NC60D STGPL6NC60D
STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet production data Features Low C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TAB
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation
More information2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time
More informationObsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
More informationSTGW39NC60VD. 40 A V - very fast IGBT. Features. Applications. Description
40 A - 600 V - very fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode Applicatio High frequency inverters UPS Motor drivers
More informationSTTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features
Automotive high voltage ultrafast rectifier A K K A Description Datasheet - production data The, which is using ST s new 1000 V planar technology, is especially suited for switching mode base drive and
More informationFERD15S50. Field effect rectifier. Features. Description
Field effect rectifier Datasheet production data K Table 1. Device summary Symbol Value I F(AV) 15 A V RRM 50 V T j (max) +150 C V F (typ) A K PowerFLAT 5x6 FERD15S50DJF A 0.30 V Features ST proprietary
More informationP-channel 30 V, Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package. Features V GS = 10 V. R DS(on) * Q g industry benchmark
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
More informationSTN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 Applications Lighting Switch mode power supply Description 2 SOT-223 3
More informationSTGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description
30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with
More informationSTGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationSTN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching
More informationSTH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
N-channel 40 V, 0.0018 mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V 0.0022 Ω 120 A 150 W 2
More informationTrench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter
More informationSTTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Features Datasheet production data A1 A2 K Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance Insulated
More informationLD A low drop positive voltage regulator: adjustable and fixed. Features. Description
3 A low drop positive voltage regulator: adjustable and fixed Datasheet - production data TO-220 TO-220FP Unlike PNP regulators, where a part of the output current is wasted as quiescent current, the LD1085
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package Datasheet - production data Features Maximum junction temperature: TJ = 175 C Kelvin pin Minimized tail current Low saturation
More informationLM217M, LM317M. Medium current 1.2 to 37 V adjustable voltage regulator. Description. Features
Medium current 1.2 to 37 V adjustable voltage regulator Description Datasheet - production data TO-220 DPAK The LM217M and LM317M are monolithic integrated circuits in TO-220 and DPAK packages used as
More informationSTGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TO-3PF 1 2 3 TAB TO-247 1 2 3 Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
More informationFeatures. Description. Table 1. Device summary. Quality Level. Engineering Model
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h
More informationDescription. Table 1. Device summary SOT-223 DPAK TO-220
Low drop fixed and adjustable positive voltage regulators Datasheet - production data SOT-223 Available in ± 2% (at 25 C) and 4% in full temperature range High supply voltage rejection: 80 db typ. (at
More informationLD A, very low drop voltage regulators. Description. Features
1.5 A, very low drop voltage regulators Datasheet - production data Description The is a high current, high accuracy, low-dropout voltage regulator series. These regulators feature 400 mv dropout voltage
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General
More informationFeatures. Description. Table 1. Device summary. Agency specification
Hi-Rel NPN bipolar transistor 80 V - 5 A Features Datasheet - production data 2 3 TO-39 TO-257 2 3 SMD.5 Figure. Internal schematic diagram BV CEO I C (max) 80 V 5 A H FE at 0 V - 50 ma > 70 Operating
More informationTrench gate field-stop IGBT, HB series 650 V, 20 A high speed. Features. Description
Trench gate fieldstop IGBT, HB series 650 V, 20 A high speed Datasheet production data TAB 3 2 1 TO3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C Minimized tail
More informationN-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationTrench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120
More informationD44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More informationSTD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data TAB TAB DPAK
More informationDSL03. Secondary protection for VDSL2 lines. Description. Features. Complies with the following standards
Secondary protection for VDSL2 lines Description Datasheet - production data Features SOT23-6L High surge capability to comply with GR-1089 and ITU-T K20/21 Voltages: 10, 22 and 24 V Low capacitance device:
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More informationN-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.
STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
More information2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description
Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics
More informationSTGW80H65DFB, STGWT80H65DFB
STGW80H65DFB, STGWT80H65DFB Trench gate fieldstop IGBT, HB series 650 V, 80 A high speed Datasheet production data TAB 3 2 1 TO247 TO3P Figure 1: Internal schematic diagram 1 3 2 Features Maximum junction
More informationSTGWA19NC60HD. 31 A, 600 V, very fast IGBT with Ultrafast diode. Features. Applications. Description
31 A, 600 V, very fast IGBT with Ultrafast diode Features Low onvoltage drop (V CE(sat) ) Very soft Ultrafast recovery antiparallel diode Applicatio High frequency motor drives SMPS and PFC in both hard
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationN-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.
N-channel 100 V, 0.062 Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Features Datasheet - production data Order code V DS R DS(on) max I D 1 2 3 STL3N10F7 100 V 0.07 Ω 4 A 1
More informationLM323. Three-terminal 3 A adjustable voltage regulators. Description. Features
Three-terminal 3 A adjustable voltage regulators Description Datasheet - production data Features TO-220 Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 Ω Minimum
More informationSTTH6003. High frequency secondary rectifier. Description. Features
High frequency secondary rectifier A1 A2 K Description Datasheet - production data Dual rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged in TO-247, this device
More informationSTGW35HF60WD. 35 A, 600 V ultra fast IGBT. Features. Applications. Description
35 A, 600 V ultra fast IGBT Features Improved E off at elevated temperature Minimal tail current Low conduction losses V CE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationSTD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
More informationN-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.
N-channel 30 V, 0.02 Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 4 5 6 2 SOT23-6L 3 STT6N3LLH6 30 V
More informationOrder codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
More information2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
More informationSTB7ANM60N, STD7ANM60N
STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order codes V DS @ T jmax R DS(on) max.
More informationFeatures. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10
180 W, 32 V Wideband LDMOS transistor Features Datasheet - target specification Excellent thermal stability Common source configuration push-pull P OUT = 180 W with 19 db gain @ 860 MHz BeO-free package
More informationSales Type Marking Package Packaging STG3P3M25N60 G3P3M25N60 SEMITOP 3 SEMIBOX. May 2006 Rev1 1/12
3 Phase inverter IGBT - SEMITOP 3 module PRELIMINARY DATA General features Type V CES @ I C =7A, V CE(sat) (Max) Ts=25 C I C @80 C STG3P3M25N60 600V < 2.5V 25A N-channel very fast PowerMESH IGBT Lower
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More information3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description
Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package
More informationObsolete Product(s) - Obsolete Product(s)
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
More information2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
More informationFeatures. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification
Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Features Datasheet - production data TO-78 1 2 3 4 5 6 LCC-6 Figure 1. Internal schematic diagram for TO-78 BV CEO I C (max) Hi-Rel PNP dual matched
More information