STGBL6NC60D STGPL6NC60D

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1 STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet production data Features Low C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TAB TAB Applicatio Very high frequency operation High frequency lamp ballast SMPS and PFC (including hard switching) D²PAK TO-220 Description This series of hyper fast IGBT is based on PowerMESH technology and exhibits very low turn-off energy, thanks to a new lifetime control system. This results in an optimized trade-off between on-state voltage and switching losses, allowing very high operating frequencies. Figure 1. Internal schematic diagram C (2, TAB) G (1) SC12850 E (3) Table 1. Device summary Order codes Marking Package Packaging STGBL6NC60DT4 GBL6NC60D D²PAK Tape and reel STGPL6NC60D GPL6NC60D TO-220 Tube September 2012 Doc ID Rev 4 1/17 This is information on a product in full production. 17

2 Contents STGBL6NC60D, STGPL6NC60D Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Packaging mechanical data Revision history /17 Doc ID Rev 4

3 STGBL6NC60D, STGPL6NC60D Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V (1) I C Collector current (continuous) at T C = 25 C 14 A I (1) C Collector current (continuous) at T C = 100 C 6 A I (2) CL Turn-off latching current 18 A (3) I CP Pulsed collector current 18 A V GE Gate-emitter voltage ±20 V I F Diode RMS forward current at T C = 25 C 7 A Surge non repetitive forward current t I p = 10 ms FSM 20 A sinusoidal P TOT Total dissipation at T C = 25 C 56 W V ISO Iulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T C = 25 C) 1. Calculated according to the iterative formula: -- V T j Operating junction temperature 55 to 150 C I C ( T C ) T jmax ( ) T = C R thj c V CE( sat) ( max) ( T jmax ( ), I C ( T C )) 2. Vclamp = 80%,(V CES ), Tj =150 C, R G = 10 Ω, V GE = 15 V 3. Pulse width limited by max junction temperature allowed Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case diode max. 4 C/W Thermal resistance junction-case IGBT max. 2.2 C/W R thj-amb Thermal resistance junction-ambient max C/W Doc ID Rev 4 3/17

4 Electrical characteristics STGBL6NC60D, STGPL6NC60D 2 Electrical characteristics T CASE = 25 C unless otherwise specified. Table 4. Static electrical characteristics Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 1.5 A V GE = 15 V, I C = 3 A V GE = 15 V, I C = 3 A,T C =125 C V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V I CES I GES Collector cut-off current (V GE = 0) Gate-emitter leakage current (V CE = 0) V CE = 600 V V CE = 600 V, T C = 125 C V V V µa ma V GE = ±20 V ±100 na g fs Forward traconductance V CE = 15 V, I C = 3 A 3 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gate-emitter charge Gate-collector charge V CE = 390 V, I C = 3 A, V GE = 15 V (see Figure 17) nc nc nc 4/17 Doc ID Rev 4

5 STGBL6NC60D, STGPL6NC60D Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390 V, I C = 3 A R G = 10 Ω, V GE = 15 V (see Figure 18) A/µs t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390 V, I C = 3 A R G = 10 Ω, V GE = 15 V, T C =125 C (see Figure 18) A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V CC = 390 V, I C = 3 A, R GE = 10 Ω, V GE = 15 V (see Figure 18) t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V CC = 390 V, I C = 3 A, R GE = 10 Ω, V GE =15 V, T C = 125 C (see Figure 18) Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit (1) E on (2) E off E ts E (1) on (2) E off E ts Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses V CC = 390 V, I C = 3 A R G =10 Ω, V GE =15 V (see Figure 18) V CC = 390 V, I C = 3 A R G =10 Ω, V GE = 15 V, T C = 125 C (see Figure 18) Eon is the turn-on losses when a typical diode is used in the test circuit in (see Figure 19). If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C) 2. Turn-off losses include also the tail of the collector current µj µj µj µj µj µj Table 8. Turn-off with snubber Symbol Parameter Test conditio Min. Typ. Max. Unit t f E off (1) Current fall time Turn-off switching losses V CC = 200 V, I C = 1.5 A R G =22 Ω, V clamp =400 V, L=1 mh, C-snubber = 2.7 nf (see Figure 18) µj t f E off (1) Current fall time Turn-off switching losses V CC = 200 V, I C = 1.5 A R G =22 Ω, V clamp = 400 V, L=1 mh, C-snubber= 2.7 nf, T C = 100 C (see Figure 18) µj 1. Turn-off losses include also the tail of the collector current Doc ID Rev 4 5/17

6 Electrical characteristics STGBL6NC60D, STGPL6NC60D Table 9. Collector-emitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward on-voltage I F = 1 A I F =3 A I F =3 A,Tc=125 C V V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 3 A, V R = 40 V, di/dt = 100 A/μs (see Figure 19) nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 3 A,V R = 40 V, T C =125 C, di/dt = 100 A/μs (see Figure 19) nc A 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics Figure 4. Traconductance Figure 5. Collector-emitter on voltage vs. temperature 6/17 Doc ID Rev 4

7 STGBL6NC60D, STGPL6NC60D Electrical characteristics Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variatio Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Doc ID Rev 4 7/17

8 Electrical characteristics STGBL6NC60D, STGPL6NC60D Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current Figure 14. Turn-off SOA Figure 15. Forward voltage drop vs. forward current AM00690v Tj=150 C (Maximum values) 1.0 Tj=25 C (Maximum values) VFM(V) /17 Doc ID Rev 4

9 STGBL6NC60D, STGPL6NC60D Test circuit 3 Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform Doc ID Rev 4 9/17

10 Package mechanical data STGBL6NC60D, STGPL6NC60D 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Table 10. Dim. TO-220 type A mechanical data mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /17 Doc ID Rev 4

11 STGBL6NC60D, STGPL6NC60D Package mechanical data Figure 20. TO-220 type A drawing _typeA_Rev_S Doc ID Rev 4 11/17

12 Package mechanical data STGBL6NC60D, STGPL6NC60D Table 11. Dim. D²PAK (TO-263) mechanical data mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /17 Doc ID Rev 4

13 STGBL6NC60D, STGPL6NC60D Package mechanical data Figure 21. D²PAK (TO-263) drawing _T Figure 22. D²PAK footprint (a) Footprint a. All dimeion are in millimeters Doc ID Rev 4 13/17

14 Packaging mechanical data STGBL6NC60D, STGPL6NC60D 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /17 Doc ID Rev 4

15 STGBL6NC60D, STGPL6NC60D Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 24. Reel REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID Rev 4 15/17

16 Revision history STGBL6NC60D, STGPL6NC60D 6 Revision history Table 13. Document revision history Date Revision Changes 27-Jul First release 09-Jul : Package mechanical data has been updated. 21-Nov Updated Table 9 and Figure Sep Minor text changes in the Description. Updated: Section 4: Package mechanical data on page 10 and Section 5: Packaging mechanical data on page /17 Doc ID Rev 4

17 STGBL6NC60D, STGPL6NC60D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID Rev 4 17/17

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency