STB80NF55-08T4 STP80NF55-08, STW80NF55-08

Transcription

1 STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < Ω 80 A STP80NF V < Ω 80 A STW80NF V < Ω 80 A Standard threshold drive I D TO TO Application Switching applications Description 1 D²PAK 3 This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STB80NF55-08T4 B80NF55-08 D²PAK Tape and reel STP80NF55-08 P80NF55-08 TO-220 Tube STW80NF55-08 W80NF55-08 TO-247 Tube April 2009 Doc ID Rev 2 1/

2 Contents STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Packaging mechanical data Revision history /15 Doc ID Rev 2

3 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 55 V V GS Gate- source voltage ±20 V (1) I D Drain current (continuos) at T C = 25 C 80 A I (1) D Drain current (continuos) at T C = 100 C 80 A (2) I DM Drain current (pulsed) 320 A P TOT Total dissipation at T C = 25 C 300 W T j T stg 1. Current limited package Derating factor 2 W/ C Operating junction temperature Storage temperature 2. Pulse width limited by safe operating area -55 to 175 C Table 3. Thermal resistance Symbol Parameter Value D 2 PAK TO-220 TO-247 Unit R thj-case Thermal resistance junction-case max 0.5 C/W R thj-amb Thermal resistance junction-ambient max 35 (1) C/W T l Maximum lead temperature for soldering purpose 300 C 1. When mounted on 1 inch 2 FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 30 V) 40 A 1000 mj Doc ID Rev 2 3/15

4 Electrical characteristics STB80NF55-08T4, STP80NF55-08, STW80NF Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = 0 55 V V DS = max rating V DS = max rating@125 C 1 10 µa µa V GS = ±20 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 40 A Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g fs (1) Forward transconductance V DS =15 V, I D = 18 A 40 S C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V, f = 1 MHz, V GS = pf pf pf Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD = 27 V, I D = 80 A V GS =10 V (see Figure 14) nc nc nc 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off-delay time Fall time V DD = 27 V, I D = 40 A R G =4.7 Ω V GS = 10 V (see Figure 13) ns ns ns ns 4/15 Doc ID Rev 2

5 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current 80 A I (1) SDM Source-drain current (pulsed) 320 A V SD Forward on voltage I SD = 80 A, V GS = V t rr (2) Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% I SD = 80 A,V DD = 25 V di/dt=100 A/µs, T j =150 C (see Figure 18) ns nc A Doc ID Rev 2 5/15

6 Electrical characteristics STB80NF55-08T4, STP80NF55-08, STW80NF Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BV DSS vs temperature Figure 7. Static drain-source on resistance 6/15 Doc ID Rev 2

7 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID Rev 2 7/15

8 Test circuits STB80NF55-08T4, STP80NF55-08, STW80NF Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/15 Doc ID Rev 2

9 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Doc ID Rev 2 9/15

10 Package mechanical data STB80NF55-08T4, STP80NF55-08, STW80NF55-08 TO-220 mechanical data Dim mm inch Min Typ Max Min Typ Max A b b c D D E e e F H J L L L L P Q /15 Doc ID Rev 2

11 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Package mechanical data TO-247 Mechanical data Dim. mm. Min. Typ Max. A A b b b c D E e 5.45 L L L øp ør S 5.50 Doc ID Rev 2 11/15

12 Package mechanical data STB80NF55-08T4, STP80NF55-08, STW80NF55-08 D²PAK (TO-263) mechanical data Dim mm inch Min Typ Max Min Typ Max A A b b c c D D E E e e H J L L L R V _M 12/15 Doc ID Rev 2

13 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Packaging mechanical data 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W BASE QTY BULK QTY * on sales type Doc ID Rev 2 13/15

14 Revision history STB80NF55-08T4, STP80NF55-08, STW80NF Revision history Table 9. Document revision history Date Revision Changes 03-Mar First release 15-Apr Table 1: Device summary has been updated 14/15 Doc ID Rev 2

15 STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID Rev 2 15/15