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1 STGF100N30 STGP100N30, STGW100N30 90 A V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology Peak collector current I RP = 330 T C = 25 C (see Table 2) Very low-on voltage drop (V CE(sat) ) and energy per pulse for improved panel efficiency High repetitive peak current capability Description Advanced high-density and high-current IGBT technology with low-drop companion diode adapted to various functions in PDP sets. Table 1. Device summary Figure 1. TO-220FP TO TO-247 Internal schematic diagram Order codes Marking Package Packaging STGF100N30 GF100N30 TO-220FP Tube STGP100N30 GP100N30 TO-220 Tube STGW100N30 GW100N30 TO-247 Tube February 2009 Rev 1 1/

2 Contents STGF100N30, STGP100N30, STGW100N30 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /13

3 STGF100N30, STGP100N30, STGW100N30 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value TO-220 TO-247 TO-220FP Unit V CES Collector-emitter voltage (V GE = 0) 330 V I C (1) I C (1) Collector current (continuous) at T C = 25 C Collector current (continuous) at T C = 100 C 1. Calculated according to the iterative formula: 2. V clamp = 300 V, T j = 150 C, R G =10 Ω, V GE =15 V 3. Half sine wave with duty cycle = 1%, t on >1 µs A A (2) I CL Turn-off latching current 330 A I RP Repetitive peak current at T C = 25 C 330 (3) A V GE Gate-emitter voltage (continuous) ±20 V ESD (HBM) ESD (MM) Electrostatic sensitive discharge, human body model applied to all three pins (C = 100 pf, R = 1.5 kω) Electrostatic sensitive discharge, machine model applied to all three pins (C = 200 pf, R = 0) 3 KV 300 V P TOT Total dissipation at T C = 25 C W Table 3. T j Operating junction temperature - 55 to 150 C Symbol I C ( T C ) ( ) T = C R thj c V CE( sat) ( max) ( T jmax ( ), I C ( T C )) Thermal resistance Parameter T jmax Value TO-220 TO-247 TO-220FP R thj-case Thermal resistance junction-case max C/W Thermal resistance junction-ambient R thj-amb C/W max Unit 3/13

4 Electrical characteristics STGF100N30, STGP100N30, STGW100N30 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES V CE(sat) Collector-emitter breakdown voltage (V GE = 0) Collector-emitter saturation voltage I C = 1 ma 330 V V GE = 15 V, I C = 50 A V GE = 15 V, I C = 100 A,T C =125 C V V V GE(th) Gate threshold voltage V CE =10 V, I C = 1 ma V I CES I GES Table 5. Collector cut-off current (V GE =0) Gate-emitter leakage current (V CE = 0) Dynamic V CE = 330 V V CE = 330 V, T C = 125 C µa µa V GE = ± 20 V ±1 µa Symbol Parameter Test conditions Min. Typ. Max. Unit R ies C ies C oes C res Table 6. Input resistance Input capacitance V CE = 25 V, f = 1 MHz, Output capacitance V GE = 0 Reverse transfer capacitance Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rise t doff t fall t rise t doff t fall E/p Turn-off voltage rise time Turn-off delay time Turn-off current fall time Turn-off voltage rise time Turn-off delay time Turn-off current fall time Energy per pulse V GE = 15 V, I C = 25 A, V CC =180 V R G = 10 Ω, L= 25 µh, V GE = 15 V, I C = 25 A, V CC =180 V R G = 10 Ω, L= 25 µh, T C = 150 C V CC =240 V, V GE = 15 V, R G = 5.1 Ω, L= 250 nh C=0.40 µf (see Figure 15) Ω pf pf pf ns ns ns ns ns ns 490 µj 4/13

5 STGF100N30, STGP100N30, STGW100N30 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics IC (A) Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. VGE=15V 12V 11V 10V 9V 8V 7V VCE(V) (S) TJ=-50 C TJ=25 C TJ=125 C IC(A) Gate charge vs. gate-source voltage AM03220v1 Figure 7. Capacitance variations IC (A) 250 VCE=15V AM03221v VGE(V) AM03222v1 AM03228v1 GFS VCE(sat) VGE (V) 16 VCE=200V IC=50A AM03223v1 (V) IC=180A IC=100A IC=50A IC=25A TJ( C) Cies C (pf) 4000 f=1mhz VGE=0 AM03224v Coes Cres Qg(nC) VCE(V) 5/13

6 Electrical characteristics STGF100N30, STGP100N30, STGW100N30 Figure 8. Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current VGE(th) (norm) AM03226v1 VCE(sat) (V) AM03227v Figure TJ( C) V(BR)CES (norm) Normalized breakdown voltage vs. temperature TJ( C) AM03229v1 Figure TJ=-50 C 2.0 TJ=25 C 1.5 TJ=125 C IC(A) Turn-off SOA IC (A) VCE(V) AM03225v1 6/13

7 STGF100N30, STGP100N30, STGW100N30 Test circuits 3 Test circuits Figure 12. Test circuit for inductive load switching Figure 13. Gate charge test circuit Figure 14. Switching waveforms Figure 15. Energy per pulse test circuit VCE VG IC Td(on) Ton Tr(Ion) Td(off) Toff Tr(Voff) Tcross Tf 90% 10% 90% 10% AM01504v1 90% 10% AM01505v1 AM01506v1 AM03230v1 A B RG RG DRIVER Ipulse D.U.T. L C VCC 7/13

8 Package mechanical data STGF100N30, STGP100N30, STGW100N30 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 8/13

9 STGF100N30, STGP100N30, STGW100N30 Package mechanical data TO-220FP mechanical data Dim. Min. mm Typ. Max. A B D E F F F G G1 H L2 L3 L4 L5 L6 L7 Dia A B L7 16 E D Dia L6 L5 F1 F2 F H G G L2 L4 L _Rev_J 9/13

10 Package mechanical data STGF100N30, STGP100N30, STGW100N30 TO-220 mechanical data Dim mm inch Min Typ Max Min Typ Max A b b c D D E e e F H J L L L L P Q /13

11 STGF100N30, STGP100N30, STGW100N30 Package mechanical data TO-247 Mechanical data Dim. mm. Min. Typ Max. A A b b b c D E e 5.45 L L L øp ør S /13

12 Revision history STGF100N30, STGP100N30, STGW100N30 5 Revision history Table 7. Document revision history Date Revision Changes 11-Feb Initial release. 12/13

13 STGF100N30, STGP100N30, STGW100N30 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13

STGW38IH130D, STGWT38IH130D

STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop