STGW40V60DF STGWT40V60DF

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1 STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching off Low saturation voltage: V CE(sat) = 1.8 V I C = 4 A Tight parameters distribution Safe paralleling TO-247 TO-3P Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Figure 1. Internal schematic diagram C (2, TAB) G (1) Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW4V6DF GW4V6DF TO-247 Tube STGWT4V6DF GWT4V6DF TO-3P Tube September 213 DocID2442 Rev 4 1/17 This is information on a product in full production. 17

2 Contents STGW4V6DF, STGWT4V6DF Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /17 DocID2442 Rev 4

3 STGW4V6DF, STGWT4V6DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = ) 6 V I C Continuous collector current at T C = 25 C 8 A I C Continuous collector current at T C = 1 C 4 A I (1) CP Pulsed collector current 16 A V GE Gate-emitter voltage ±2 V I F Continuous forward current at T C = 25 C 8 A I F Continuous forward current at T C = 1 C 4 A (1) I FP Pulsed forward current 16 A P TOT Total dissipation at T C = 25 C 283 W T STG Storage temperature range - 55 to 15 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT.53 C/W R thjc Thermal resistance junction-case diode 1.14 C/W R thja Thermal resistance junction-ambient 5 C/W DocID2442 Rev 4 3/17

4 Electrical characteristics STGW4V6DF, STGWT4V6DF 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = ) I C = 2 ma 6 V V GE = 15 V, I C = 4 A V CE(sat) V F Collector-emitter saturation voltage Forward on-voltage V GE = 15 V, I C = 4 A T J = 125 C V GE = 15 V, I C = 4 A T J = 175 C I F = 4 A V I F = 4 A, T J = 125 C 1.4 V I F = 4 A, T J = 175 C 1.3 V V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = ) V CE = 6 V 25 μa I GES Gate-emitter leakage current (V CE = ) V GE = ± 2 V 25 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 48 V, I C = 4 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/17 DocID2442 Rev 4

5 STGW4V6DF, STGWT4V6DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/μs V CE = 4 V, I C = 4 A, t d ( off ) Turn-off delay time ns R G = 1 Ω, V GE = 15 V, t f Current fall time ns see Figure 28 E (1) on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/μs t d ( off ) Turn-off delay time V CE = 4 V, I C = 4 A, ns t f Current fall time R G = 1 Ω, V GE = 15 V, T J = 175 C, see Figure ns (1) E on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time ns Q rr Reverse recovery charge nc I rrm Reverse recovery current I F = 4 A, V R = 4 V, V GE = 15 V, di/dt=1 A/μs A di rr/ /dt Peak rate of fall of reverse see Figure 28 recovery current during t b A/μs E rr Reverse recovery energy μj t rr Reverse recovery time ns Q rr Reverse recovery charge nc I rrm Reverse recovery current I F = 4 A, V R = 4 V, V GE = 15 V, di/dt=1 A/μs A di rr/ /dt Peak rate of fall of reverse recovery current during t b T J = 175 C, see Figure A/μs E rr Reverse recovery energy μj DocID2442 Rev 4 5/17

6 Electrical characteristics STGW4V6DF, STGWT4V6DF 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature Ptot (W) 25 AM17385v1 IC (A) 8 7 AM17386v TC( C) TC( C) Figure 4. Output characteristics (T J =25 C) Figure 5. Output characteristics (T J =175 C) IC (A) VGE=15V 11V 13V 9V AM17387v1 IC (A) VGE=15V 13V 11V 9V AM17388v V VCE(V) VCE(V) Figure 6. V CE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current VCE(sat) (V) VGE=15V IC=8A AM17389v1 VCE(sat) (V) VGE=15V Tj=175 C AM1739v IC=4A IC=2A Tj=25 C Tj=-4 C TC( C) IC(A) 6/17 DocID2442 Rev 4

7 STGW4V6DF, STGWT4V6DF Electrical characteristics Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area IC (A) AM17391v1 IC (A) AM17392v1 9 8 TC=8 C TC=1 C rectangular current shape, (duty cycle=.5, Vcc= 4V Rg=1Ω, Vge=/15V, Tj=175 C) Single pulse, Tc=25 C Tj<175 C, VGE=15V 1μs 1μs 1ms 1 1 f(khz) VCE(V) Figure 1. Transfer characteristics Figure 11. Diode V F vs. forward current IC (A) Tj=-4 C Tj=175 C Tj=25 C AM17393v1 VF (V) Tj=-4 C Tj=25 C Tj=175 C AM17394v VGE(V) IF(A) Figure 12. Normalized V GE(th) vs junction temperature Figure 13. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1. VCE=VGE IC=1mA AM17395v1 V(BR)CES (norm) 1.1 IC=2mA AM17396v TC( C) TC( C) DocID2442 Rev 4 7/17

8 Electrical characteristics STGW4V6DF, STGWT4V6DF Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage C(pF) AM17397v1 VGE(V) AM17398v1 1 Cies Cres Coes VCE(V) Figure 16. Switching losses vs. collector current Qg(nC) Figure 17. Switching losses vs. gate resistance E(μJ) 28 VCC=4V, VGE=15V Rg=1Ω, Tj=175 C Eon AM17399v1 E(μJ) 23 VCC=4V, VGE=15V IC=4A, Tj=175 C Eon AM174v Eoff Eoff IC(A) Figure 18. Switching losses vs. junction temperature Rg(Ω) Figure 19. Switching losses vs. collector emitter voltage E(μJ) 13 VCC=4V, VGE=15V IC=4A, Rg=1Ω Eon AM1741v1 E(μJ) 16 VGE=15V, Tj=175 C IC=4A, Rg=1Ω Eon AM1742v Eoff TJ( C) 8 Eoff VCE(V) 8/17 DocID2442 Rev 4

9 STGW4V6DF, STGWT4V6DF Electrical characteristics Figure 2. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t(ns) VCC=4V, VGE=15V Tj=175 C, Rg=1Ω tdoff AM1743v1 t(ns) 1 VCC=4V VGE=15V Tj=175 C IC=4A AM1744v1 1 tdon 1 tdoff tdon tr tr tf tf IC(A) Figure 22. Reverse recovery current vs. diode current slope Irm(A) Vr=4V IF=4A Tj=175 C Tj=25 C AM1745v di/dt (A/μs) Figure 24. Reverse recovery charge vs. diode current slope Rg(Ω) Figure 23. Reverse recovery time vs. diode current slope trr(μs) Tj=25 C Vr=4V IF=4A Tj=175 C AM1746v di/dt (A/μs) Figure 25. Reverse recovery energy vs. diode current slope Qrr(nC) 3 25 Vr=4V IF=4A Tj=175 C AM1747v1 Err(μJ) Vr=4V IF=4A Tj=175 C AM1748v Tj=25 C di/dt (A/μs) 8 6 Tj=25 C di/dt (A/μs) DocID2442 Rev 4 9/17

10 Electrical characteristics STGW4V6DF, STGWT4V6DF Figure 26. Thermal data for IGBT K δ=.5 ZthTO2T_B Zth=k Rthj-c δ=tp/t Single pulse tp(s) Figure 27. Thermal data for diode tp t 1/17 DocID2442 Rev 4

11 STGW4V6DF, STGWT4V6DF Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit Figure 3. Switching waveform AM154v1 AM155v1 Figure 31. Diode recovery time waveform 9% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 1% 9% 1% 9% 1% IF IRRM ta trr tb IRRM t VF dv/dt AM156v1 AM157v1 DocID2442 Rev 4 11/17

12 Package mechanical data STGW4V6DF, STGWT4V6DF 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c.4.8 D E e L L L P R S /17 DocID2442 Rev 4

13 STGW4V6DF, STGWT4V6DF Package mechanical data Figure 32. TO-247 drawing 75325_G DocID2442 Rev 4 13/17

14 Package mechanical data STGW4V6DF, STGWT4V6DF Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A A A b b b c D D E E E2 9.6 e L L1 3.5 L øp Q 5 Q /17 DocID2442 Rev 4

15 STGW4V6DF, STGWT4V6DF Package mechanical data Figure 33. TO-3P drawing 84595_A DocID2442 Rev 4 15/17

16 Revision history STGW4V6DF, STGWT4V6DF 5 Revision history Table 1. Document revision history Date Revision Changes 2-Mar Initial release. 17-Apr Jun Document status promoted from preliminary data to production data. Added: Section 2.1: Electrical characteristics (curves) Added minimum and maximum values for V GE(th) in Table 4: Static characteristics. 11-Sep Updated V F value in Table 4: Static characteristics. 16/17 DocID2442 Rev 4

17 STGW4V6DF, STGWT4V6DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 213 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID2442 Rev 4 17/17

STGW40V60DF STGWT40V60DF

STGW40V60DF STGWT40V60DF STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching