Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package

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1 Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V I C = 25 A Tight parameter distribution Positive V CE(sat) temperature coefficient Low thermal resistance Soft and fastrecovery antiparallel diode G() C(2, TAB) Applications Industrial drives UPS Solar Welding E(3) Product status link STGW25M2DF3 NGE3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the shortcircuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code Marking Package Packing STGW25M2DF3 G25M2DF3 TO247 Tube DS3 Rev 3 June 28 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings Electrical ratings Table. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = V) 2 V I Continuous collector current at T C = 25 C 5 A C Continuous collector current at T C = C 25 A I CP () Pulsed collector current A V Gateemitter voltage ±2 V GE Transient gateemitter voltage ±3 V I Continuous forward current at T C = 25 C 5 A F Continuous forward current at T C = C 25 A I FP () Pulsed forward current A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range 55 to 5 C T J Operating junction temperature range 55 to 75 C. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junctioncase IGBT.4 C/W thjc Thermal resistance junctioncase diode.96 C/W R thja Thermal resistance junctionambient 5 C/W DS3 Rev 3 page 2/6

3 Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage V GE = V, I C = 2 ma 2 V V GE = 5 V, I C = 25 A V CE(sat) Collectoremitter saturation voltage V GE = 5 V, I C = 25 A, T J = 25 C V GE = 5 V, I C = 25 A, T J = 75 C V I F = 25 A V F Forward onvoltage I F = 25 A, T J = 25 C 2.95 V I F = 25 A, T J = 75 C.9 V GE(th) Gate threshold voltage V CE = V GE, I C = ma V I CES Collector cutoff current V GE = V, V CE = 2 V 25 µa I GES Gateemitter leakage current V CE = V, V GE = ±2 V ±25 na Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance 55 C oes Output capacitance V CE = 25 V, f = MHz, V GE = V 8 C res Reverse transfer capacitance 65 Q g Total gate charge V CC = 96 V, I C = 25 A, 85 Q ge Gateemitter charge V GE = to 5 V.5 Q gc Gatecollector charge (see Figure 29. Gate charge test circuit) 45.5 pf nc DS3 Rev 3 page 3/6

4 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turnon delay time 28 ns t r Current rise time 5 ns (di/dt) on t d(off) t f E () on Turnon current slope Turnoff delay time Current fall time Turnon switching energy V CE = 6 V, I C = 25 A, V GE = 5 V, R G = 5 Ω (see Figure 28. Test circuit for inductive load switching) A/µs ns ns mj E (2) off Turnoff switching energy.3 mj E ts Total switching energy 2.5 mj t d(on) Turnon delay time 28 ns t r Current rise time 7 ns (di/dt) on t d(off) t f E () on Turnon current slope Turnoff delay time Current fall time Turnon switching energy V CE = 6 V, I C = 25 A, V GE = 5 V, R G = 5 Ω, T J = 75 C (see Figure 28. Test circuit for inductive load switching) A/µs ns ns mj E (2) off Turnoff switching energy.9 mj E ts Total switching energy 3.5 mj t sc Shortcircuit withstand time V CC 6 V, V GE = 5 V, T Jstart 5 C µs. Including the reverse recovery of the diode 2. Including the tail of the collector current Table 6. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time 265 ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 25 A, V R = 6 V, V GE = 5 V, di/dt = A/µs.2 9 µc A di rr /dt Peak rate of fall of reverse (see Figure 28. Test circuit for recovery current during t b inductive load switching) 9 A/µs E rr Reverse recovery energy.22 µj t rr Reverse recovery time 585 ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, 5 µc I rrm Reverse recovery current V GE = 5 V, T J = 75 C, 3 A di/dt = A/µs di rr /dt Peak rate of fall of reverse recovery current during t (see Figure 28. Test circuit for b inductive load switching) 27 A/µs E rr Reverse recovery energy.75 µj DS3 Rev 3 page 4/6

5 Electrical characteristics (curves) 2. Electrical characteristics (curves) Figure. Power dissipation vs case temperature Figure 2. Collector current vs case temperature Ptot (W) 32 GIPD32496FSR VGE 5 V, TJ 75 C IC (A) 5 GIPD32499FSR VGE 5 V, TJ 75 C TC( C) 5 5 TC( C) Figure 3. Output characteristics (T J = 25 C) Figure 4. Output characteristics (T J = 75 C) IC (A) 8 VGE=5V GIPD32493FSR 3V V IC (A) 8 GIPD32499FSR VGE=5V 3V 6 6 V 4 9V 4 9V 2 7V 2 7V VCE(V) VCE(V) Figure 5. V CE(sat) vs junction temperature Figure 6. V CE(sat) vs collector current VCE(sat) (V) 3.2 VGE=5V GIPD324924FSR IC=5A VCE(sat) (V) 3.2 VGE=5V GIPD32433FSR Tj=75 C Tj=25 C IC=25A IC=2.5A Tj=4 C TC( C) IC(A) DS3 Rev 3 page 5/6

6 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency Figure 8. Safe operating area IC (A) GIPD32444FSR IC (A) GIPD3245FSR TC=8 C 6 TC= C µs 4 2 Rectangular current shape, (duty cycle=.5, Vcc= 6V Rg=5Ω, Vge=/5V, Tj=75 C) f(khz) Single pulse, Tc=25 C Tj<75 C, VGE=5V µs µs ms VCE(V) Figure 9. Transfer characteristics Figure. Diode V F vs forward current IC (A) 8 6 VCE = 8V Tj=25 C GIPD32459FSR VF (V) GIPD32423FSR Tj=4 C Tj=25 C 4 Tj=75 C Tj=75 C VGE(V) IC(A) Figure. Normalized V GE(th) vs junction temperature Figure 2. Normalized V (BR)CES vs junction temperature VGE(th) (norm). VCE=VGE IC=mA GIPD32435FSR V(BR)CES (norm).4 IC=2mA GIPD324322FSR TC( C) TC( C) DS3 Rev 3 page 6/6

7 Electrical characteristics (curves) Figure 3. Capacitance variations Figure 4. Gate charge vs gateemitter voltage C(pF) GIPD324335FSR Cies VGE(V) 6 VCC = 96 V IC = 25 A IG = ma GIPD32434FSR 2 f= MHz Coes 8 4 Cres. VCE(V) Qg(nC) Figure 5. Switching energy vs collector current Figure 6. Switching energy vs gate resistance E(mJ) 3.2 VCC=6V, VGE=5V Rg=5Ω, Tj=75 C GIPD324347FSR E(mJ) 2.6 VCC=6V, VGE=5V IC=25A, Tj=75 C GIPD3244FSR 2.4 Eoff 2.2 Eoff Eon.4 Eon IC(A) Rg(Ω) Figure 7. Switching energy vs junction temperature Figure 8. Switching energy vs collector emitter voltage E(mJ).8 VCC=6V, VGE=5V IC=25A, Rg=5Ω GIPD32448FSR E(mJ) 2.5 VGE=5V, Tj=75 C IC=25A, Rg=5Ω GIPD324422FSR Eoff 2.5 Eoff Eon Eon TJ( C) VCE(V) DS3 Rev 3 page 7/6

8 Electrical characteristics (curves) Figure 9. Shortcircuit time and current vs V GE Figure 2. Switching times vs collector current tsc(µs) 35 VCC 6V TJ 5 C tsc GIPD324425FSR Isc(A) Isc 4 t(ns) VCC=6V, VGE=5V Tj=75 C, Rg=5Ω GIPD324429FSR tf tdoff 25 tdon tr VGE(V) IC(A) Figure 2. Switching times vs gate resistance t(ns) tf VCC=6V, VGE=5V Tj=75 C, IC=25A GIPD324432FSR Figure 22. Reverse recovery current vs diode current slope Irrm (A) 48 VCC=6V, VGE=5V Tj=75 C, IF=25A GIPD324437FSR tdoff 4 tdon tr Rg(Ω) di/dt(a/µs) Figure 23. Reverse recovery time vs diode current slope trr (ns) 7 GIPD324439FSR Figure 24. Reverse recovery charge vs diode current slope Qrr (µc) 5.2 GIPD324442FSR VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) DS3 Rev 3 page 8/6

9 Electrical characteristics (curves) Figure 25. Reverse recovery energy vs diode current slope Err (mj).9 GIPD324445FSR VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) Figure 26. Thermal impedance for IGBT K ZthTO2T_A δ =.5 δ =.2 δ =. δ =.5 δ =.2 δ =. Single pulse t p (s) Figure 27. Thermal impedance for diode DS3 Rev 3 page 9/6

10 Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit G C A A L= µh k k E B B G C 3.3 µf D.U.T µf V CC k + R G E k k k AM5 4v AM55v Figure 3. Switching waveform Figure 3. Diode reverse recovery waveform 9% di/dt Q rr VG % t rr 9% I F t s t f VCE IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 9% % % I RRM I RRM % V RRM t dv/dt AM56v GADG872748SA DS3 Rev 3 page /6

11 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS3 Rev 3 page /6

12 TO247 package information 4. TO247 package information Figure 32. TO247 package outline 75325_9 DS3 Rev 3 page 2/6

13 TO247 package information Table 7. TO247 package mechanical data Dim. mm Min. Typ. Max. A A b..4 b b c.4.8 D E e L L L2 8.5 ØP ØR S DS3 Rev 3 page 3/6

14 Revision history Table 8. Document revision history Date Version Changes 22Apr24 Initial release. 3Oct24 2 8Jun28 3 Document status promoted from preliminary to production data. Updated all the document accordingly. Added Section 2.: Electrical characteristics (curves). Updated Section 4: Package mechanical data. The part number STGWA25M2DF3 has been moved to a separate datasheet, and the document has been updated accordingly. Updated features list on cover page. Updated Table. Absolute maximum ratings. Minor text changes DS3 Rev 3 page 4/6

15 Contents Contents Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits... 4 Package information TO247 package information... Revision history...4 DS3 Rev 3 page 5/6

16 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 28 STMicroelectronics All rights reserved DS3 Rev 3 page 6/6

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching