Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube

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1 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01475v1_noZen Applications Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube April 2017 DocID Rev 4 1/11 This is information on a product in full production.

2 Contents SCT50N120 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Package information HiP247 package information Revision history /11 DocID Rev 4

3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V ID Drain current (continuous) at TC = 25 C 65 A ID Drain current (continuous) at TC = 100 C 50 A IDM (1) Drain current (pulsed) 130 A PTOT Total dissipation at TC = 25 C 318 W Storage temperature range C -55 to 200 Tj Operating junction temperature range C Tstg Notes: (1) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.55 C/W Rthj-amb Thermal resistance junction-ambient 40 C/W DocID Rev 4 3/11

4 Electrical characteristics SCT50N120 2 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit IDSS IGSS Zero gate voltage drain current Gate-body leakage current VDS = 1200 V, VGS = 0 V µa VDS = 1200 V, VGS = 0 V, TJ = 200 C 10 µa VDS = 0 V, VGS = -10 to 22 V ±100 na VGS(th) Gate threshold voltage VDS = VGS, ID = 1 ma V RDS(on) Static drain-source on-resistance VGS = 20 V, ID = 40 A mω VGS = 20 V, ID = 40 A, TJ = 150 C VGS = 20 V, ID = 40 A, TJ = 200 C 59 mω 70 mω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance pf Coss Output capacitance VDS = 400 V, f = 1 MHz, pf VGS Reverse transfer = 0 V Crss pf capacitance Qg Total gate charge nc VDD = 800 V, ID = 40 A, Qgs Gate-source charge nc VGS = 0 to 20 V Qgd Gate-drain charge nc Rg Gate input resistance f=1 MHz open drain Ω Table 6: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon Turn-on switching energy VDD = 800 V, ID = 40 A µj Eoff Turn-off switching energy RG= 2.2 Ω, VGS = -5 to 20 V µj Eon Turn-on switching energy VDD = 800 V, ID = 40 A µj Eoff Turn-off switching energy RG= 2.2 Ω, VGS = -5 to 20 V TJ= 150 C µj Table 7: Reverse SiC diode characteristics Symbol Parameter Test conditions Min Typ. Max Unit VSD Diode forward voltage IF = 20 A, VGS = 0 V V trr Reverse recovery time - 55 ns IF = 40 A, di/dt = 2000/ns Qrr Reverse recovery charge nc VDD = 800 V IRRM Reverse recovery current A 4/11 DocID Rev 4

5 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics (TJ= 25 C) Figure 5: Output characteristics (TJ= 150 C) Figure 6: Output characteristics (TJ= 200 C) Figure 7: Transfer characteristics DocID Rev 4 5/11

6 Electrical characteristics Figure 8: Power dissipation SCT50N120 Figure 9: Gate charge vs gate-source voltage Figure 10: Capacitance variations Figure 11: Switching energy vs. drain current Figure 12: Switching energy vs. junction temperature Figure 13: Normalized V(BR)DSS vs. temperature 6/11 DocID Rev 4

7 Figure 14: Normalized gate threshold voltage vs. temperature Electrical characteristics Figure 15: Normalized on-resistance vs. temperature Figure 16: Reverse conduction characteristics (TJ = -50 C) Figure 17: Reverse conduction characteristics (TJ = 25 C) Figure 18: Reverse conduction characteristics (TJ = 150 C) DocID Rev 4 7/11

8 Package information SCT50N120 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 19: HiP247 package outline 8/11 DocID Rev 4

9 Package information Table 8: HiP247 package mechanical data mm Dim. Min. Typ. Max. A A b b b c D E e L L L ØP ØR S DocID Rev 4 9/11

10 Revision history SCT50N120 4 Revision history Table 9: Document revision history Date Revision Changes 17-Jun First release 12-May Modified title. Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching energy (inductive load)", and Table 7: "Reverse SiC diode characteristics". Added: Section 4.1: "Electrical characteristics (curves)". Minor text changes. 23-Jun Document status promoted from preliminary to production data. 03-Apr Modified Table 7: "Reverse SiC diode characteristics" Modified Figure 7: "Transfer characteristics", Figure 15: "Normalized on-resistance vs. temperature", Figure 16: "Reverse conduction characteristics (TJ = -50 C)", Figure 17: "Reverse conduction characteristics (TJ = 25 C)" and Figure 18: "Reverse conduction characteristics (TJ = 150 C)" Updated Section 3: "Package information" Minor text changes. 10/11 DocID Rev 4

11 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 4 11/11

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