STGFW20H65FB, STGW20H65FB, STGWT20H65FB

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1 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB TO-3P TO-3PF Figure 1. Internal schematic diagram C (2, TAB) 3 Features Maximum junction temperature: T J = 175 C High speed switching series Minimized tail current V CE(sat) = 1.55 V I C = 20 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Applications Photovoltaic inverters High frequency converters Description G (1) E (3) These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order codes Marking Package Packaging STGFW20H65FB GFW20H65FB TO-3PF Tube STGW20H65FB GW20H65FB TO-247 Tube STGWT20H65FB GWT20H65FB TO-3P Tube August 2014 DocID Rev 1 1/20 This is information on a product in full production. 20

2 Contents STGFW20H65FB, STGW20H65FB, STGWT20H65FB Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curve) Test circuits Package mechanical data TO-3PF, STGFW20H65FB TO-247, STGW20H65FB TO-3P, STGWT20H65FB Revision history /20 DocID Rev 1

3 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Unit Symbol Parameter TO-247 TO-3P TO-3PFP V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 25 C 40 A I C Continuous collector current at T C = 0 C 20 A (1) I CP Pulsed collector current 80 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter TO-3PF TO-247 TO-3P Unit R thjc Thermal resistance junction-case C/W R thja Thermal resistance junction-ambient 50 C/W DocID Rev 1 3/20

4 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 650 V V GE = 15 V, I C = 20 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A T J = 125 C V GE = 15 V, I C = 20 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = 0) V CE = 650 V 25 µa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 520 V, I C = 20 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/20 DocID Rev 1

5 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs t V CE = 400 V, I C = 20 A, d(off) Turn-off delay time ns R G = Ω, V GE = 15 V, t f Current fall time see Figure ns E (1) on Turn-on switching losses µj (2) E off Turn-off switching losses µj E ts Total switching losses µj t d(on) Turn-on delay time ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs t d(off) t f Turn-off delay time Current fall time V CE = 400 V, I C = 20 A, R G = Ω, V GE = 15 V, T J = 175 C, see Figure ns ns E (1) on Turn-on switching losses µj E (2) off Turn-off switching losses µj E ts Total switching losses µj 1. Energy losses include reverse recovery of the external diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W 2. Turn-off losses include also the tail of the collector current. DocID Rev 1 5/20

6 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB 2.1 Electrical characteristics (curve) Figure 2. Output characteristics (T J = 25 C) IC (A) VGE 70 =15 V 13V 11V GIPG FSR 9V 7V VCE(V) Figure 4. Transfer characteristics IC (A) 25 C 70 VCE = V 175 C 60 GIPG FSR Figure 3. Output characteristics (T J = 175 C) IC (A) VGE =15 V 11V GIPG FSR 13V 9V 7V VCE(V) Figure 5. Collector current vs. case temperature for TO-247 and TO-3P IC (A) GIPG FSR VGE(V) Figure 6. Collector current vs. case temperature for TO-3PF 20 VGE 15V, TJ 175 C TC( C) Figure 7. V CE(sat) vs. junction temperature IC (A) 25 GIPG FSR VCE(sat) (V) 2.2 VGE= 15V GIPG FSR IC= 40A IC= 20A VGE 15V, TJ 175 C TC( C) 1.4 IC= A TJ( C) 6/20 DocID Rev 1

7 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Figure 8. Power dissipation vs. case temperature for TO-247 and TO-3P Figure 9. Power dissipation vs. case temperature for TO-3PF Ptot (W) GIPG FSR Ptot (W) 50 GIPG FSR VGE 15V, TJ 175 C TC( C) Figure. Forward bias safe operating area for TO-247 and TO-3P VGE 15V, TJ 175 C TC( C) Figure 11. Forward bias safe operating area for TO-3PF IC (A) GIPG FSR IC (A) GIPG FSR μs μs 0 μs 0 μs 1 1 ms 1 1 ms (single pulse T C = 25 C, TJ 175 C; VGE=15V) (single pulse T C = 25 C, TJ 175 C; VGE=15V) VCE(V) Figure 12. Collector current vs. switching frequency for TO-247 and TO-3P VCE(V) Figure 13. Collector current vs. switching frequency for TO-3PF Ic [A] GIPG FSR Ic [A] GIPG FSR 60 Tc=80 C 20 Tc=80 C Tc=0 C 15 Tc=0 C rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=4.7 Ω, V GE = 0/15 V, T J =175 C) 0 1 f [khz] 5 rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=4.7 Ω, V GE = 0/15 V, T J =175 C) 0 1 f [khz] DocID Rev 1 7/20

8 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 14. Normalized V GE(th) vs. junction temperature Figure 15. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1.0 VCE= VGE IC= 1mA AM16060v1 V(BR)CES (norm) 1.1 IC= 1mA AM16059v TJ( C) Figure 16. Switching losses vs temperature TJ( C) Figure 17. Switching losses vs gate resistance E (μj) GIPG FSR E (μj) GIPG FSR 350 VCC= 400V, VGE= 15V Rg= Ω, IC= 20A EOFF VCC= 400V, VGE= 15V IC= 20A, TJ= 175 C EOFF EON 150 EON TJ( C) RG(Ω) Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter voltage E (μj) GIPG FSR E (μj) GIPG FSR 600 VCC= 400V, VGE= 15V Rg= Ω, TJ= 175 C) EOFF 400 TJ= 175 C, VGE= 15V Rg= Ω, IC= 20A EOFF EON 200 EON IC(A) VCE(V) /20 DocID Rev 1

9 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Figure 20. Switching times vs collector current Figure 21. Switching times vs gate resistance t(ns) 0 tdoff GIPG FSR t(ns) 0 TJ= 175 C, VGE= 15V IC= 20A, VCC= 400V tf tdoff GIPG FSR tdon tdon tf tr TJ= 175 C, VGE= 15V Rg= Ω, VCC= 400V tr IC(A) Figure 22. Capacitance variations Rg(Ω) Figure 23. Gate charge vs. gate-emitter voltage C(pF) GIPG FSR Cies VGE (V) VCC= 520V, IC= 20A IG= 1mA GIPG FSR Coes Cres VCE(V) Qg(nC) DocID Rev 1 9/20

10 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 24. Thermal impedance for TO-247 and TO-3P K δ=0.5 ZthTO2T_B Zth=k Rthj-c δ=tp/t Single pulse tp(s) tp t /20 DocID Rev 1

11 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics K Figure 25. Thermal impedance for TO-3PF δ=0.5 ZthTOF3T_A Zth=k Rthj-c δ=tp/t -2 Single pulse tp(s) tp t DocID Rev 1 11/20

12 Test circuits STGFW20H65FB, STGW20H65FB, STGWT20H65FB 3 Test circuits Figure 26. Test circuit for inductive load switching Figure 27. Gate charge test circuit AM01504v1 AM01505v1 Figure 28. Switching waveform 90% VG % 90% VCE Tr(Voff) % Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf % AM01506v1 12/20 DocID Rev 1

13 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW20H65FB Figure 29. TO-3PF drawing _D DocID Rev 1 13/20

14 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 7. TO-3PF mechanical data Dim. mm Min. Typ. Max. A C D D E F F G G H L L L L L L L N R Dia /20 DocID Rev 1

15 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4.2 TO-247, STGW20H65FB Figure 30. TO-247 drawing _G DocID Rev 1 15/20

16 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 8. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /20 DocID Rev 1

17 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Package mechanical data 4.3 TO-3P, STGWT20H65FB Figure 31. TO-3P drawing _B DocID Rev 1 17/20

18 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 9. TO-3P mechanical data Dim. mm Min. Typ. Max. A A A b b b c D D E E E e L L L øp øp Q Q /20 DocID Rev 1

19 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Revision history 5 Revision history Table. Document revision history Date Revision Changes 28-Aug Initial release. DocID Rev 1 19/20

20 STGFW20H65FB, STGW20H65FB, STGWT20H65FB IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 20/20 DocID Rev 1

STGW60H65FB STGWT60H65FB

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized