STGB20N40LZ, STGD20N40LZ
|
|
- Adela Walker
- 5 years ago
- Views:
Transcription
1 STGBN40LZ, STGDN40LZ Automotive-grade 390 V internally clamped IGBT E SCIS 300 mj Features Datasheet - production data TAB 1 D 2 PAK 3 TAB 1 DPAK 3 Designed for automotive applications and AEC-Q101 qualified ESD gate-emitter protection Gate-collector high voltage clamping Logic level gate drive Low saturation voltage High pulsed current capability Gate and gate-emitter resistor Applications Figure 1. Internal schematic diagram C (2 or TAB) R G G (1) R GE Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Table 1. Device summary Order codes Marking Packages Packaging STGBN40LZ GBN40LZ D 2 PAK Tape and reel STGDN40LZ GDN40LZ DPAK Tape and reel June 14 DocID Rev 5 1/ This is information on a product in full production.
2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history / DocID Rev 5
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter DPAK Value D 2 PAK Unit V CES Collector-emitter voltage (v GE = 0) V CES(clamped) V V ECS Emitter collector voltage (V GE = 0) V I C Collector current (continuous) at T C = 100 C 25 A I (1) CP Pulsed collector current 40 A V GE Gate-emitter voltage V GE(clamped) V P TOT Total dissipation at T C = 25 C W E SCIS Single pulse energy T C = 25 C, L = 3 mh, V CC = 50 V 300 mj E SCIS Single pulse energy T C =150 C, L = 3 mh, V CC = 50 V 180 mj Human body model, R= 1.5 kω, C = 100 pf 8 kv ESD Machine model, R = 0, C = 100 pf 600 V Charged device model 4 kv T stg Storage temperature T j Operating junction temperature 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter DPAK Value D 2 PAK Unit R thj-case Thermal resistance junction-case C/W R thj-amb Thermal resistance junction-ambient C/W DocID Rev 5 3/
4 Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V CES(clamped) Collector emitter clamped voltage (V GE = 0) I C = 2 ma 390 V I C = 2 ma, T J = - 40 C to 175 C V V ECS V GE(clamped) I CES I GES Emitter collector break-down voltage (V GE = 0) Gate emitter clamped voltage Collector cut-off current (V GE = 0) Gate-emitter leakage current (V CE = 0) I C = 75 ma 28 V I C = 75 ma T J = - 40 C to 175 C I G = ±2 ma T J = - 40 C to 175 C V V V CE = 15 V, T J = 175 C µa V CE = 0 V, T J = 175 C 100 µa V GE = ±10 V 625 µa V GE = ±10 V T J = - 40 C to 175 C µa R GE Gate emitter resistance kω R G Gate resistance 100 Ω V GE(th) V CE(sat) g fe Gate threshold voltage Collector emitter saturation voltage Forward transconductance V GE =V CE, I C = 1 ma V V GE =V CE, I C = 1 ma, T J = 175 C V V GE = 4.5 V, I C = 10 A, T J = 175 C V V GE = 4 V, I C = 6 A, V V CE = 25 V, I C = 10 A 10.3 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Gate charge V CE = 280 V, I C = 10 A, V GE = 5 V nc 4/ DocID Rev 5
5 Electrical characteristics Table 6. Switching on/off Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Resistive load Turn-on delay time Rise time V CC = 14 V, Rg= 1kΩ, R L = 1 Ω, V GE = 5 V µs µs t d(on) t r Resistive load Turn-on delay time Rise time V CC = 14 V, Rg= 1kΩ, R L = 1 Ω, V GE = 5 V, T J = 150 C µs µs t d(off) t f dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope V CC = 300 V, L = 1 mh I C = 10 A, V GE = 5 V, Rg= 1kΩ, µs µs V/µs t d(off) t f dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope V CC = 300 V, L = 1 mh I C = 10 A, V GE = 5 V, Rg= 1kΩ, T J = 150 C µs µs V/µs DocID Rev 5 5/
6 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Collector-emitter on voltage vs temperature (V ge = 4.5 V) Figure 3. Collector-emitter on voltage vs temperature (I C = 6 A) Vce(sat) (V) GIPD FSR Vce(sat) (V) GIPD FSR 2 IC= 15A 1.45 Vge= 3.8V IC= 10A Vge= 4.5V Vge= 5.0V IC= 6A TJ( C) Figure 4. Collector-emitter on voltage vs temperature (I C = 10 A) TJ( C) Figure 5. Self clamped inductive switch Vce(sat) (V) GIPD FSR ISCIS (A) GIPD FSR 1.9 Vge= 3.8V TJ= 25 C Vge= 4.5V Vge= 5.0V TJ( C) 10 TJ= 150 C VCE = 13 V VGE = 5 V RG = 1 kω L(mH) 6/ DocID Rev 5
7 Electrical characteristics Figure 6. Output characteristics (T J = 25 C) Figure 7. Output characteristics (T J = -40 C) IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V VCE(V) Figure 8. Output characteristics (T J = 175 C) IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V VCE(V) Figure 10. Collector cut-off current vs. temperature VCE(V) Figure 9. Transfer characteristics IC (A) TJ= 25 C TJ= 175 C TJ= -40 C GIPD FSR VCE= 15 V VGE(V) Figure 11. Normalized collector emitter voltage vs temperature 7 ICES (µa) GIPD FSR VCES (norm) GIPD SR 10 VCE= 350V 1.05 IC= 2mA VCE= 0V TJ( C) TJ( C) DocID Rev 5 7/
8 Electrical characteristics Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized collector emitter onvoltage vs temperature Vth (norm) GIPD SR VGE = VCE IC = 1mA Vce(sat) (norm) 1.1 GIPD FSR VGE= 4.5V IC= 10A TJ( C) TJ( C) Figure 14. Thermal impedance for D²PAK Figure 15. Thermal impedance for DPAK 8/ DocID Rev 5
9 Test circuits 3 Test circuits Figure 16. Inductive load switching and E SCIS test circuit Figure 17. Resistive load switching L AM01504v1 AM01504v2 Figure 18. Gate charge test circuit Figure 19. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01505v1 AM01506v1 DocID Rev 5 9/
10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure. D²PAK (TO-263) drawing _T 10/ DocID Rev 5
11 Package mechanical data Table 7. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 5 11/
12 Package mechanical data Figure 21. D²PAK footprint (a) Footprint a. All dimension are in millimeters 12/ DocID Rev 5
13 Package mechanical data Figure 22. DPAK (TO-252) type A drawing _M_type_A DocID Rev 5 13/
14 Package mechanical data Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L (L1) 2.80 L L R 0. V / DocID Rev 5
15 Package mechanical data Figure 23. DPAK (TO-252) type A footprint (b) Footprint_REV_M_type_A b. All dimensions are in millimeters DocID Rev 5 15/
16 Packaging mechanical data 5 Packaging mechanical data Figure 24. Tape drawing 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 16/ DocID Rev 5
17 Packaging mechanical data REEL DIMENSIONS Figure 25. Reel drawing 40mm min. T Access hole At sl ot location A D B C N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 5 17/
18 Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W / DocID Rev 5
19 Revision history 6 Revision history Table 11. Document revision history Date Revision Changes 08-Feb-13 1 Initial release. 24-Jun Sep Jan-14 4 Added device in D 2 PAK. Modified Table 1: Device summary. Added Section 2.1: Electrical characteristics (curves). Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. Updated t d(on) value for resistive load in Table 6: Switching on/off. Updated mechanical data for DPAK. Minor text changes. Modified title in cover page. Added: E SCIS in Table 2, V ECS and g fs values in Table 4. Modified minimum value of V GE(clamped) in Table 4 Updated Section 4: Package mechanical data Modified order codes in Table 1. Minor text changes. 4-Jun-14 5 Updated features in cover page. DocID Rev 5 19/
20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 14 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America / DocID Rev 5
STGW28IH125DF STGWT28IH125DF
STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube
TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off
More informationMJB44H11T4-A. Automotive-grade low voltage NPN power transistor. Features. Applications. Description
Automotive-grade low voltage NPN power transistor Features Datasheet - production data TAB Designed for automotive applications and AEC- Q101 qualified Low collector-emitter saturation voltage Fast switching
More informationSTGW38IH130D, STGWT38IH130D
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationObsolete Product(s) - Obsolete Product(s)
STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop
More informationSTGW60V60DF STGWT60V60DF
1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series
More informationObsolete Product(s) - Obsolete Product(s)
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology Peak collector current I
More informationSTGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description
5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1
More informationSTB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
More informationAutomotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.
Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
More informationSTGW60H65DFB STGWT60H65DFB
STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail
More informationSTR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and
More informationMMBTA42. Small signal NPN transistor. Features. Applications. Description
Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure
More informationSTGB40V60F, STGP40V60F, STGW40V60F
STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB 1 D 2 PAK 3 TAB 1 2 3 TO-247 Figure 1. Internal schematic diagram C or TAB TO-220
More informationDual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationSTR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape
More informationSTGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More information2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
More informationLD A, very low drop voltage regulators. Description. Features
1.5 A, very low drop voltage regulators Datasheet - production data Description The is a high current, high accuracy, low-dropout voltage regulator series. These regulators feature 400 mv dropout voltage
More informationObsolete Product(s) - Obsolete Product(s)
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
More informationLD A low drop positive voltage regulator: adjustable and fixed. Features. Description
3 A low drop positive voltage regulator: adjustable and fixed Datasheet - production data TO-220 TO-220FP Unlike PNP regulators, where a part of the output current is wasted as quiescent current, the LD1085
More informationSTN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is
More informationSTGB14NC60K STGD14NC60K
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio (
More informationLM217M, LM317M. Medium current 1.2 to 37 V adjustable voltage regulator. Description. Features
Medium current 1.2 to 37 V adjustable voltage regulator Description Datasheet - production data TO-220 DPAK The LM217M and LM317M are monolithic integrated circuits in TO-220 and DPAK packages used as
More informationP-channel 30 V, Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package. Features V GS = 10 V. R DS(on) * Q g industry benchmark
P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
More informationDescription. Table 1. Device summary SOT-223 DPAK TO-220
Low drop fixed and adjustable positive voltage regulators Datasheet - production data SOT-223 Available in ± 2% (at 25 C) and 4% in full temperature range High supply voltage rejection: 80 db typ. (at
More informationSTGBL6NC60D STGPL6NC60D
STGBL6NC60D STGPL6NC60D 600 V - 6 A hyper fast IGBT Datasheet production data Features Low C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TAB
More informationOrder codes Marking Package Packaging. STGB19NC60HT4 GB19NC60H D²PAK Tape and reel STGP19NC60H GP19NC60H TO-220 Tube STGW19NC60H GW19NC60H TO-247 Tube
STGB19NC60H, STGP19NC60H STGW19NC60H 19 A 600 V very fast IGBT Features Low onvoltage drop (V CE(sat) ) High frequency operation Applicatio High frequency motor drives TO247 1 2 3 TAB 1 2 3 SMPS and PFC
More informationSTGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description
STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationObsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications
STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationSTH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
N-channel 40 V, 0.0018 mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V 0.0022 Ω 120 A 150 W 2
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationSTN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching
More informationDSL03. Secondary protection for VDSL2 lines. Description. Features. Complies with the following standards
Secondary protection for VDSL2 lines Description Datasheet - production data Features SOT23-6L High surge capability to comply with GR-1089 and ITU-T K20/21 Voltages: 10, 22 and 24 V Low capacitance device:
More informationObsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES
More informationSTP4NK60Z, STP4NK60ZFP
STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Features Datasheet - production data Order codes V DS R DS(on) max. P TOT
More informationFERD15S50. Field effect rectifier. Features. Description
Field effect rectifier Datasheet production data K Table 1. Device summary Symbol Value I F(AV) 15 A V RRM 50 V T j (max) +150 C V F (typ) A K PowerFLAT 5x6 FERD15S50DJF A 0.30 V Features ST proprietary
More informationSTN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 Applications Lighting Switch mode power supply Description 2 SOT-223 3
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationFeatures. Description. Table 1. Device summary. Agency specification
Hi-Rel NPN bipolar transistor 80 V - 5 A Features Datasheet - production data 2 3 TO-39 TO-257 2 3 SMD.5 Figure. Internal schematic diagram BV CEO I C (max) 80 V 5 A H FE at 0 V - 50 ma > 70 Operating
More informationSTGB20H60DF, STGF20H60DF, STGP20H60DF
STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB Features High speed switching Tight parameters distribution TO-220 1 2 3 TO-220FP
More informationSTGW30N120KD STGWA30N120KD
STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 µs IGBT co-packaged
More informationSTTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features
Automotive high voltage ultrafast rectifier A K K A Description Datasheet - production data The, which is using ST s new 1000 V planar technology, is especially suited for switching mode base drive and
More informationSTB7ANM60N, STD7ANM60N
STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order codes V DS @ T jmax R DS(on) max.
More informationSTD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
More informationVNP10N06 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS(on) I lim VNP10N06 60 V 0.3 Ω 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN
More informationObsolete Product(s) - Obsolete Product(s)
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
More information2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
More informationSTD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
More informationFeatures. Description. Table 1. Device summary. Quality Level. Engineering Model
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More informationLM2931. Very low drop voltage regulators with inhibit function. Description. Features
Very low drop voltage regulators with inhibit function Description Datasheet - production data DPAK Features SO-8 TO-92 Very low dropout voltage (90 mv typ. at 10 ma load) Low quiescent current (typ. 2.5
More informationN-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationSTGB7NC60HD, STGF7NC60HD, STGP7NC60HD
STGB7NC60HD, STGF7NC60HD, STGP7NC60HD N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Datasheet production data Features Low on-voltage drop (V CE(sat) ) Off losses include tail current Losses
More informationLM323. Three-terminal 3 A adjustable voltage regulators. Description. Features
Three-terminal 3 A adjustable voltage regulators Description Datasheet - production data Features TO-220 Output current: 3 A Internal current and thermal limiting Typical output impedance: 0.01 Ω Minimum
More informationMJD122 MJD127 Complementary power Darlington transistors Features Applications Description
MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching
More information2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
More informationLD A, very low drop voltage regulators. Features. Description. Table 1. Device summary
3 A, very low drop voltage regulators Datasheet - production data Table 1. Device summary Order codes LD29300P2M33R LD29300P2MTR Output voltages 3.3 V ADJ P²PAK/A Features Very low dropout voltage (typ.
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More information2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
More informationSTB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description
N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
More informationSTD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data TAB TAB DPAK
More informationOrder codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationSTGW30NC60WD. 30 A, 600 V ultra fast IGBT. Features. Applications. Description
30 A, 600 V ultra fast IGBT Features High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency motor
More informationN-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.
STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
More informationSTTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Features Datasheet production data A1 A2 K Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance Insulated
More informationSTGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description
30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with
More informationFeatures. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10
180 W, 32 V Wideband LDMOS transistor Features Datasheet - target specification Excellent thermal stability Common source configuration push-pull P OUT = 180 W with 19 db gain @ 860 MHz BeO-free package
More informationI D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationObsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
More informationLow noise and low drop voltage regulator with shutdown function. Description
Low noise and low drop voltage regulator with shutdown function Features SOT23-5L Description Datasheet - production data The LK112S is a low-dropout linear regulator with shutdown function. The internal
More informationSTGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationSTB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
More information2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
More informationObsolete Product(s) - Obsolete Product(s)
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
More information2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
More information2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
More informationSTB18N60M2, STP18N60M2, STP18N60M2. N-channel 600 V, Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages
STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 2 3 1 D PAK Order
More informationFeatures. Order codes STB24N60DM2 STW24N60DM2. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging
STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus low Q g Power MOSFETs in D 2 PAK, TO-220 and TO-247 packages Datasheet production data TAB TAB Features D 2 PAK
More informationBUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed
High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description
More informationN-channel 40 V, 0.03 Ω typ., 30 A, STripFET II Power MOSFET in a DPAK package. Order code Marking Package Packaging
STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
More informationD44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
More informationSTB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet production data Features Order code V DSS R DS(on) max. I D STB55NF06 STP55NF06 60 V < 0.018 Ω 50
More informationObsolete Product(s) - Obsolete Product(s)
40 A - 600 V - ultra fast IGBT Features Low C RES / C IES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation Applicatio High frequency
More information1.5 A adjustable and fixed low drop positive voltage regulator. Description
1.5 A adjustable and fixed low drop positive voltage regulator Description Datasheet - production data The is a low drop voltage regulator capable of providing up to 1.5 A of output current. Dropout is
More informationN-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.
N-channel 100 V, 0.062 Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Features Datasheet - production data Order code V DS R DS(on) max I D 1 2 3 STL3N10F7 100 V 0.07 Ω 4 A 1
More informationSTB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
More informationOrder codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
More informationObsolete Product(s) - Obsolete Product(s)
2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
More informationBUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
More information2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
More informationCBTVS2A12-1F3. Circuit breaker with transient voltage suppressor. Features. Description. Complies with the following standards:
Circuit breaker with transient voltage suppressor Features Datasheet - production data Flip Chip (4 bumps) Figure 1. Pin configuration (bump side) A B 1 Transient voltage suppressor (TVS) Non-resettable
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More informationN-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.
N-channel 30 V, 0.02 Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 4 5 6 2 SOT23-6L 3 STT6N3LLH6 30 V
More informationT1635H, T1650H. High temperature 16 A Snubberless Triacs. Applications. Description. Features
High temperature 16 A Snubberless Triacs Datasheet - production data D²PAK T16xxH-6G Features G A1 A1 G TO-220AB insulated T16xxH-6I Medium current Triac 150 C max. T j turn-off commutation Low thermal
More informationDescription. Table 1. Device summary. Order code Temp. range Package Packing Marking
Quad 2-input Schmitt NAND gate Datasheet - production data SO14 TSSOP14 Wide operating voltage range: V CC (opr) = 2 V to 6 V Pin and function compatible with 74 series 132 ESD performance HBM: 2 kv MM:
More information