STGB20N40LZ, STGD20N40LZ

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1 STGBN40LZ, STGDN40LZ Automotive-grade 390 V internally clamped IGBT E SCIS 300 mj Features Datasheet - production data TAB 1 D 2 PAK 3 TAB 1 DPAK 3 Designed for automotive applications and AEC-Q101 qualified ESD gate-emitter protection Gate-collector high voltage clamping Logic level gate drive Low saturation voltage High pulsed current capability Gate and gate-emitter resistor Applications Figure 1. Internal schematic diagram C (2 or TAB) R G G (1) R GE Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Table 1. Device summary Order codes Marking Packages Packaging STGBN40LZ GBN40LZ D 2 PAK Tape and reel STGDN40LZ GDN40LZ DPAK Tape and reel June 14 DocID Rev 5 1/ This is information on a product in full production.

2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history / DocID Rev 5

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter DPAK Value D 2 PAK Unit V CES Collector-emitter voltage (v GE = 0) V CES(clamped) V V ECS Emitter collector voltage (V GE = 0) V I C Collector current (continuous) at T C = 100 C 25 A I (1) CP Pulsed collector current 40 A V GE Gate-emitter voltage V GE(clamped) V P TOT Total dissipation at T C = 25 C W E SCIS Single pulse energy T C = 25 C, L = 3 mh, V CC = 50 V 300 mj E SCIS Single pulse energy T C =150 C, L = 3 mh, V CC = 50 V 180 mj Human body model, R= 1.5 kω, C = 100 pf 8 kv ESD Machine model, R = 0, C = 100 pf 600 V Charged device model 4 kv T stg Storage temperature T j Operating junction temperature 55 to 175 C 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter DPAK Value D 2 PAK Unit R thj-case Thermal resistance junction-case C/W R thj-amb Thermal resistance junction-ambient C/W DocID Rev 5 3/

4 Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V CES(clamped) Collector emitter clamped voltage (V GE = 0) I C = 2 ma 390 V I C = 2 ma, T J = - 40 C to 175 C V V ECS V GE(clamped) I CES I GES Emitter collector break-down voltage (V GE = 0) Gate emitter clamped voltage Collector cut-off current (V GE = 0) Gate-emitter leakage current (V CE = 0) I C = 75 ma 28 V I C = 75 ma T J = - 40 C to 175 C I G = ±2 ma T J = - 40 C to 175 C V V V CE = 15 V, T J = 175 C µa V CE = 0 V, T J = 175 C 100 µa V GE = ±10 V 625 µa V GE = ±10 V T J = - 40 C to 175 C µa R GE Gate emitter resistance kω R G Gate resistance 100 Ω V GE(th) V CE(sat) g fe Gate threshold voltage Collector emitter saturation voltage Forward transconductance V GE =V CE, I C = 1 ma V V GE =V CE, I C = 1 ma, T J = 175 C V V GE = 4.5 V, I C = 10 A, T J = 175 C V V GE = 4 V, I C = 6 A, V V CE = 25 V, I C = 10 A 10.3 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Gate charge V CE = 280 V, I C = 10 A, V GE = 5 V nc 4/ DocID Rev 5

5 Electrical characteristics Table 6. Switching on/off Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Resistive load Turn-on delay time Rise time V CC = 14 V, Rg= 1kΩ, R L = 1 Ω, V GE = 5 V µs µs t d(on) t r Resistive load Turn-on delay time Rise time V CC = 14 V, Rg= 1kΩ, R L = 1 Ω, V GE = 5 V, T J = 150 C µs µs t d(off) t f dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope V CC = 300 V, L = 1 mh I C = 10 A, V GE = 5 V, Rg= 1kΩ, µs µs V/µs t d(off) t f dv/dt Inductive load Turn-off delay time Fall time Turn-off voltage slope V CC = 300 V, L = 1 mh I C = 10 A, V GE = 5 V, Rg= 1kΩ, T J = 150 C µs µs V/µs DocID Rev 5 5/

6 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Collector-emitter on voltage vs temperature (V ge = 4.5 V) Figure 3. Collector-emitter on voltage vs temperature (I C = 6 A) Vce(sat) (V) GIPD FSR Vce(sat) (V) GIPD FSR 2 IC= 15A 1.45 Vge= 3.8V IC= 10A Vge= 4.5V Vge= 5.0V IC= 6A TJ( C) Figure 4. Collector-emitter on voltage vs temperature (I C = 10 A) TJ( C) Figure 5. Self clamped inductive switch Vce(sat) (V) GIPD FSR ISCIS (A) GIPD FSR 1.9 Vge= 3.8V TJ= 25 C Vge= 4.5V Vge= 5.0V TJ( C) 10 TJ= 150 C VCE = 13 V VGE = 5 V RG = 1 kω L(mH) 6/ DocID Rev 5

7 Electrical characteristics Figure 6. Output characteristics (T J = 25 C) Figure 7. Output characteristics (T J = -40 C) IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V VCE(V) Figure 8. Output characteristics (T J = 175 C) IC (A) GIPD FSR 7.5V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V VGE= 3.5V VCE(V) Figure 10. Collector cut-off current vs. temperature VCE(V) Figure 9. Transfer characteristics IC (A) TJ= 25 C TJ= 175 C TJ= -40 C GIPD FSR VCE= 15 V VGE(V) Figure 11. Normalized collector emitter voltage vs temperature 7 ICES (µa) GIPD FSR VCES (norm) GIPD SR 10 VCE= 350V 1.05 IC= 2mA VCE= 0V TJ( C) TJ( C) DocID Rev 5 7/

8 Electrical characteristics Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized collector emitter onvoltage vs temperature Vth (norm) GIPD SR VGE = VCE IC = 1mA Vce(sat) (norm) 1.1 GIPD FSR VGE= 4.5V IC= 10A TJ( C) TJ( C) Figure 14. Thermal impedance for D²PAK Figure 15. Thermal impedance for DPAK 8/ DocID Rev 5

9 Test circuits 3 Test circuits Figure 16. Inductive load switching and E SCIS test circuit Figure 17. Resistive load switching L AM01504v1 AM01504v2 Figure 18. Gate charge test circuit Figure 19. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01505v1 AM01506v1 DocID Rev 5 9/

10 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure. D²PAK (TO-263) drawing _T 10/ DocID Rev 5

11 Package mechanical data Table 7. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 5 11/

12 Package mechanical data Figure 21. D²PAK footprint (a) Footprint a. All dimension are in millimeters 12/ DocID Rev 5

13 Package mechanical data Figure 22. DPAK (TO-252) type A drawing _M_type_A DocID Rev 5 13/

14 Package mechanical data Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L (L1) 2.80 L L R 0. V / DocID Rev 5

15 Package mechanical data Figure 23. DPAK (TO-252) type A footprint (b) Footprint_REV_M_type_A b. All dimensions are in millimeters DocID Rev 5 15/

16 Packaging mechanical data 5 Packaging mechanical data Figure 24. Tape drawing 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 16/ DocID Rev 5

17 Packaging mechanical data REEL DIMENSIONS Figure 25. Reel drawing 40mm min. T Access hole At sl ot location A D B C N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 5 17/

18 Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W / DocID Rev 5

19 Revision history 6 Revision history Table 11. Document revision history Date Revision Changes 08-Feb-13 1 Initial release. 24-Jun Sep Jan-14 4 Added device in D 2 PAK. Modified Table 1: Device summary. Added Section 2.1: Electrical characteristics (curves). Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. Updated t d(on) value for resistive load in Table 6: Switching on/off. Updated mechanical data for DPAK. Minor text changes. Modified title in cover page. Added: E SCIS in Table 2, V ECS and g fs values in Table 4. Modified minimum value of V GE(clamped) in Table 4 Updated Section 4: Package mechanical data Modified order codes in Table 1. Minor text changes. 4-Jun-14 5 Updated features in cover page. DocID Rev 5 19/

20 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 14 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America / DocID Rev 5

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