Obsolete Product(s) - Obsolete Product(s)

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1 Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Application Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. I D P W STB20NK50Z 500 V < 0.27 Ω 17 A 190 W Figure 1. 1 D²PAK Internal schematic diagram G(1) 3 D(2) S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STB20NK50Z B20NK50Z D²PAK Tape and reel March 2012 Doc ID 9118 Rev 10 1/15 This is information on a discontinued product. 15

2 Contents STB20NK50Z Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /15 Doc ID 9118 Rev 10

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 500 V V GS Gate-source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 17 A I D Drain current (continuous) at T C = 100 C A I (1) DM Drain current (pulsed) 68 A P TOT Total dissipation at T C = 25 C 190 W V ESD(G-S) dv/dt (2) Derating factor 1.51 W/ C Gate source ESD (HBM-C=100 pf, R=1.5 kω) 6000 Peak diode recovery voltage slope 4.5 V/ns T stg Storage temperature -55 to 150 C T j Max operating junction temperature 150 C 1. Pulse width limited by safe operating area 2. I SD 17 A, di/dt 200 A/µs, V DD V (BR)DSS, T j T JMAX. Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 0.66 C/W R thj-amb Thermal resistance junction-ambient max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting T J =25 C, I D =I AR, V DD =50 V) 17 A 850 mj Doc ID 9118 Rev 10 3/15

4 Electrical characteristics STB20NK50Z 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D =1 ma, V GS = V V DS = max rating V DS = max rating, T C = 125 C 1 50 µa µa V GS = ± 20 V ± 10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 100 µa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 8.5 A Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g fs (1) C iss C oss C rss C oss eq. (2) t d(on) t r t d(off) t f Q g Q gs Q gd Forward transconductance V DS = 15 V, I D = 8.5 A - 13 S Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge 1. Pulsed: pulse duration=300µs, duty cycle 1.5% V DS = 25 V, f = 1 MHz, V GS = C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS. pf pf pf V DS =0, V DS = 0 to 640 V pf V DD = 250 V, I D = 8.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 15) V DD = 400 V, I D = 17 A, V GS = 10 V (see Figure 16) ns ns ns ns 119 nc nc nc 4/15 Doc ID 9118 Rev 10

5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 17 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Reverse recovery time Reverse recovery charge Reverse recovery current Gate-source Zener diode I SD = 17 A, di/dt = 100 A/µs V R = 100 V (see Figure 17) I SD = 17 A, di/dt = 100 A/µs V R = 100 V, Tj = 150 C (see Figure 17) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components Symbol Parameter Test conditions Min. Typ. Max. Unit BV GSO Gate-source breakdown voltage Igs=± 1mA (open drain) 30 V A A ns µc A ns µc A Doc ID 9118 Rev 10 5/15

6 Electrical characteristics STB20NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/15 Doc ID 9118 Rev 10

7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Figure 12. Normalized gate threshold voltage vs temperature Maximum avalanche energy vs temperature Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B VDSS vs temperature Doc ID 9118 Rev 10 7/15

8 Electrical characteristics STB20NK50Z Figure 14. Source-drain diode forward characteristic 8/15 Doc ID 9118 Rev 10

9 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. switching and diode recovery times Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform Doc ID 9118 Rev 10 9/15

10 Package mechanical data STB20NK50Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 9. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /15 Doc ID 9118 Rev 10

11 Package mechanical data Figure 21. D²PAK (TO-263) drawing Figure D²PAK footprint (a) _T Footprint a. All dimensions are in millimeters Doc ID 9118 Rev 10 11/15

12 Packaging mechanical data STB20NK50Z 5 Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /15 Doc ID 9118 Rev 10

13 Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W Figure 24. Reel REEL DIMENSIONS A0 User direction of feed P1 User direction of feed 40mm min. Access hole At sl ot location B D C D1 R Bending radius AM08852v2 T A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 9118 Rev 10 13/15

14 Revision history STB20NK50Z 6 Revision history Table 11. Document revision history Date Revision Changes 21-Jun Mar Added new package, mechanical data. 26-Nov Updated symbol for R DS(on) in Table 5: On/off states. 20-Mar The part numbers STF20NK50Z, STP20NK50Z and STW20NK50Z have been moved to a separate datasheet. 14/15 Doc ID 9118 Rev 10

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