STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1

Transcription

1 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages Datasheet - production data TAB TAB Features TAB IPAK DPAK TAB 1 3 Order codes V DS R DS(on) max. P TOT I D STB4NK60ZT4 STB4NK60Z-1 STD4NK60ZT4 STD4NK60Z V 2 Ω 70 W 4 A I²PAK D²PAK 3 100% avalanche tested Very low intrinsic capacitances Zener-protected Figure 1. Internal schematic diagram D(2, TAB) Applications Switching applications Description G(1) S(3) AM01476v1 These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order codes Marking Packages Packaging STB4NK60ZT4 D 2 PAK Tape and reel B4NK60Z STB4NK60Z-1 I 2 PAK Tube STD4NK60ZT4 DPAK Tape and reel D4NK60Z STD4NK60Z-1 IPAK Tube July 2013 DocID8882 Rev 8 1/26 This is information on a product in full production.

2 Contents STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /26 DocID8882 Rev 8

3 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 600 V V GS Gate- source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 4 A I D Drain current (continuous) at T C = 100 C 2.5 A I (1) DM Drain current (pulsed) 16 A P TOT Total dissipation at T C = 25 C 70 W ESD dv/dt (2) Derating factor 0.56 W/ C Gate-source human body model (C=100 pf, R=1.5 kω) 1. Pulse width limited by safe operating area 3 kv Peak diode recovery voltage slope 4.5 V/ns T stg Storage temperature -55 to 150 C T j Max operating junction temperature 150 C 2. I SD 4 A, di/dt 200 A/μs, V DD V (BR)DSS, T J T JMAX. Table 3. Thermal data Value Symbol Parameter D 2 PAK, I 2 PAK DPAK, IPAK Unit R thj-case Thermal resistance junction-case max 1.79 C/W R thj-amb Thermal resistance junction-ambient max C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max ) Single pulse avalanche energy (starting T J = 25 C, I D =I AR, V DD = 50 V) 4 A 120 mj DocID8882 Rev 8 3/26 26

4 Electrical characteristics STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D =1 ma 600 V V DS = 600 V V DS = 600 V, T C = 125 C 1 50 μa μa V GS = ± 20 V ± 10 μa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 μa V R DS(on) Static drain-source on resistance V GS = 10 V, I D = 2 A Ω 1. Pulsed: pulse duration=300μs, duty cycle 1.5% Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit (1) g fs Forward transconductance V DS = 15 V, I D = 2 A - 3 S C iss Input capacitance pf C oss Output capacitance V DS = 25 V, f = 1 MHz, V GS = 0-67 pf C rss Reverse transfer capacitance - 13 pf (2) Equivalent output C oss eq. capacitance V DS =0, V DS = 0 to 480 V pf t d(on) Turn-on delay time - 12 ns V DD = 300 V, I D = 2 A, t r Rise time ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off delay time - 29 ns (see Figure 15) t f Fall time ns t r(voff) Off-voltage rise time V DD = 480 V, I D = 4 A, - 12 ns t r Fall time R G = 4.7 Ω, V GS = 10 V - 12 ns t c Cross-over time (see Figure 17) ns Q g Total gate charge V DD = 480 V, I D = 4 A, nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 16) nc 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS. 4/26 DocID8882 Rev 8

5 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 4 A I (1) SDM Source-drain current (pulsed) - 16 A V (2) SD Forward on voltage I SD = 4 A, V GS = V t rr Reverse recovery time I SD = 4 A, di/dt = 100 A/μs ns Q rr Reverse recovery charge V DD = 24 V, Tj = 150 C nc I RRM Reverse recovery current (see Figure 17) A 1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 2. Pulse width limited by safe operating area Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D = V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID8882 Rev 8 5/26 26

6 Electrical characteristics STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on-resistance 6/26 DocID8882 Rev 8

7 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized R DS(on) vs temperature Figure 12. Source-drain diode forward characteristic Figure 13. Normalized VDS vs temperature DocID8882 Rev 8 7/26 26

8 Electrical characteristics STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 14. Avalanche energy vs temperature 8/26 DocID8882 Rev 8

9 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 DocID8882 Rev 8 9/26 26

10 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/26 DocID8882 Rev 8

11 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Table 9. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID8882 Rev 8 11/26 26

12 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 21. D²PAK (TO-263) drawing _T Figure 22. D²PAK footprint (a) Footprint a. All dimension are in millimeters 12/26 DocID8882 Rev 8

13 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Table 10. I²PAK (TO-262) mechanical data DIM. mm. min. typ max. A A b b c c D e e E L L L DocID8882 Rev 8 13/26 26

14 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 23. I²PAK (TO-262) drawing _Rev_H 14/26 DocID8882 Rev 8

15 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Table 11. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L (L1) 2.80 L L R 0.20 V2 0 8 DocID8882 Rev 8 15/26 26

16 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 24. DPAK (TO-252) type A drawing _K_type_A 16/26 DocID8882 Rev 8

17 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Table 12. DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e e H L L L L DocID8882 Rev 8 17/26 26

18 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 25. DPAK (TO-252) type E drawing _K_type_E 18/26 DocID8882 Rev 8

19 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Figure 26. DPAK footprint (b) Footprint_REV_K b. All dimensions are in millimeters DocID8882 Rev 8 19/26 26

20 Package mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Table 13. IPAK (TO-251) mechanical data DIM mm. min. typ. max. A A b b b B c c D E e 2.28 e H L L L V /26 DocID8882 Rev 8

21 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Package mechanical data Figure 27. IPAK (TO-251) drawing _K DocID8882 Rev 8 21/26 26

22 Packaging mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 5 Packaging mechanical data Table 14. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /26 DocID8882 Rev 8

23 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Packaging mechanical data Table 15. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W DocID8882 Rev 8 23/26 26

24 Packaging mechanical data STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 REEL DIMENSIONS Figure 29. Reel 40mm min. T Access hole At sl ot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 24/26 DocID8882 Rev 8

25 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Revision history 6 Revision history Table 16. Document revision history Date Revision Changes 25-Oct Document reformatted no content change. 04-Mar Modified TO-220 and TO-220FP mechanical data. 16-Apr Minor text changes to improve readability. 11-Jul Jul Updated package mechanical data Section 4 and packaging mechanical data Section 4. Minor text changes The part numbers STP4NK60Z and STP4NK60ZFP have been moved to a separate datasheet Updated: Section 4: Package mechanical data and Section 4: Package mechanical data DocID8882 Rev 8 25/26 26

26 STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 26/26 DocID8882 Rev 8