N-channel 450 V Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package. Features. Description.

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1 N-channel 45 V Ω typ.,.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data SOT-223 Figure 1. Internal schematic diagram Order code V DSS R DS(on) max 1% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications Switching applications I D P w STN3N45K3 45 V < 4 Ω.6 A 3 W Description AM1476v1 This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Table 1. Device summary Order code Marking Package Packaging STN3N45K3 3N45K3 SOT-223 Tape and reel June 213 DocID24888 Rev 1 1/15 This is information on a product in full production.

2 Contents STN3N45K3 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /15 DocID24888 Rev 1

3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = ) 45 V V GS Gate- source voltage ± 3 V I D Drain current (continuous) at T amb = 25 C.6 A I (1) DM Drain current (pulsed) 2.4 A P TOT Total dissipation at T amb = 25 C 3 W (2) I AR Avalanche current, repetitive or not-repetitive.6 A E AS (3) dv/dt (4) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 5V) 1. Pulse width limited by safe operating area. 2. Pulse width limited by Tj max. 3. Starting Tj = 25 C, I D = I AR, V DD = 5 V. 4. I SD.6 A, di/dt 4 A/µs, V DS peak V (BR)DSS, V DD = 8% V (BR)DSS. 45 mj Peak diode recovery voltage slope 12 V/ns Vesd(g-s) G-S ESD (HBM C = 1 pf, R = 1.5 kω) 1 V T stg Storage temperature -55 to 15 C T j Max. operating junction temperature 15 C Table 3. Thermal data Symbol Parameter Value Unit (1) R thj-a Thermal resistance junction-ambient 37.8 C/W 1. When mounted on FR-4 board of 1 inch 2, 2oz Cu, t < 3 sec DocID24888 Rev 1 3/15 15

4 Electrical characteristics STN3N45K3 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = ) I D = 1 ma, V GS = 45 V V DS = 45 V V DS = 45 V, T C =125 C Gate-body leakage I GSS V current (V DS = ) GS = ± 2 V ± 1 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 5 µa V Static drain-source on R DS(on V resistance GS = 1 V, I D =.6 A Ω 1 5 µa µa Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 5 V, f = 1 MHz, V GS = pf C rss Reverse transfer capacitance pf Equivalent (1) C o(tr) capacitance time pf related Equivalent V DS = to 36 V, V GS = (2) C o(er) capacitance energy pf related R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 36 V, I D = 1.8 A, nc Q gs Gate-source charge V GS = 1 V nc Q gd Gate-drain charge (see Figure 16) nc 1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from to 8% V DSS 2. C oss eq. energy related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from to 8% V DSS 4/15 DocID24888 Rev 1

5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) Turn-on delay time ns V DD = 225 V, I D =.9 A, t r Rise time ns R G = 4.7 Ω, V GS = 1 V t d(off) Turn-off-delay time (see Figure 15) ns t f Fall time ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current -.6 A I (1) SDM Source-drain current (pulsed) A V (2) SD Forward on voltage I SD =.6 A, V GS = V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 1.8 A, di/dt = 1 A/µs V DD = 6 V (see Figure 2) - 55 nc I RRM Reverse recovery current - 6 A t rr Reverse recovery time I SD = 1.8 A, di/dt = 1 A/µs ns Q rr Reverse recovery charge V DD = 6 V, T j = 15 C - 6 nc I RRM Reverse recovery current (see Figure 2) A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 3 µs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ Max Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1 ma, I D = V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID24888 Rev 1 5/15 15

6 Electrical characteristics STN3N45K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) AM134v Operation in this area is Limited by max RDS(on) Tj=15 C Tc=25 C Single pulse 1µs 1µs 1µs 1ms 1ms VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=1V 7V AM927v1 ID (A) VDS=15V AM928v V V VDS(V) Figure 6. Gate charge vs gate-source voltage VGS AM929v1 (V) VDS 12 VDD=36V ID=1.8A Qg(nC) VGS(V) Figure 7. Static drain-source on resistance RDS(on) (Ω) AM921v1 4.2 VGS=1V ID(A) 6/15 DocID24888 Rev 1

7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy C (pf) AM1296v1 Eoss (µj) AM1297v1 1 Ciss VDS(V) Coss Crss Figure 1. Normalized gate threshold voltage vs temperature VDS(V) Figure 11. Normalized on-resistance vs temperature VGS(th) (norm) 1.1 ID=5µA AM1298v1 RDS(on) (norm) 2.5 ID=1.2A AM1299v TJ( C) Figure 12. Source-drain diode forward characteristics TJ( C) Figure 13. Normalized B VDSS vs temperature VSD (V) TJ=-5 C TJ=25 C AM131v1 BVDSS (norm) ID=1mA AM13v1.7 TJ=15 C ISD(A) TJ( C) DocID24888 Rev 1 7/15 15

8 Electrical characteristics STN3N45K3 Figure 14. Maximum avalanche energy vs starting Tj EAS (mj) AM132v1 5 ID=.6 A 4 VDD=5 V TJ( C) 8/15 DocID24888 Rev 1

9 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD VGS VD RG RL D.U.T. 22 μf 3.3 μf VDD Vi=2V=VGMAX 22 μf 12V IG=CONST 2.7kΩ 47kΩ 1Ω 1nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM1468v1 AM1469v1 Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=1μH μf μf VDD VD ID L 22 μf 3.3 μf VDD G RG S Vi D.U.T. AM147v1 Pw AM1471v1 Figure 19. Unclamped inductive waveform Figure 2. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 9% 1% VDS 1% 9% VDD VDD VGS 9% AM1472v1 1% AM1473v1 DocID24888 Rev 1 9/15 15

10 Package mechanical data STN3N45K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 1/15 DocID24888 Rev 1

11 Package mechanical data Table 9. SOT-223 mechanical data Dim. mm Min. Typ. Max. A 1.8 A1.2.1 B B c D e 2.3 e1 4.6 E H V 1 Figure 21. SOT-223 mechanical data drawing 4667_M DocID24888 Rev 1 11/15 15

12 Packaging mechanical data STN3N45K3 5 Packaging mechanical data Table 1. SOT-223 tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Typ. Max. Min. Max. A A 18 B N 6 K W F W E W W P Base quantity pcs 1 P Bulk quantity pcs 1 P T Dφ D1φ Figure 22. Tape for SOT-223 (dimensions are in mm) *Cumulative tolerance of 1 sprocket holes is ±.2 mm 12/15 DocID24888 Rev 1

13 Packaging mechanical data Figure 23. Reel for TO-223 (dimensions are in mm) DocID24888 Rev 1 13/15 15

14 Revision history STN3N45K3 6 Revision history Table 11. Document revision history Date Revision Changes 25-Jun First release. Part number previously included in datasheet DocID /15 DocID24888 Rev 1

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N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package. Features. Application. Description. AM01476v1. Table 1.

N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT 4 1 2 3 SOT-223 Figure 1. Internal schematic diagram