N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package. Features. Description.
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1 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Features Datasheet - production data Order code V T Jmax R DS(on) max I D 650 V 0.86 Ω 4.8 A PowerFLAT 5x6 HV Extremely low gate charge Lower R DS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Applications Switching applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) G(4) Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh technology: MDmesh II Plus low Q g. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters S(1, 2, 3) Top View AM15540v3 Table 1. Device summary Order code Marking Package Packaging 9N60M2 PowerFLAT 5x6 HV Tape and reel March 2014 DocID Rev 2 1/16 This is information on a product in full production.
2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /16 DocID Rev 2
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 C 4.8 A I D Drain current (continuous) at T C = 100 C 3 A I (1) DM Drain current (pulsed) 19 A P TOT Total dissipation at T C = 25 C 48 W dv/dt (2) Peak diode recovery voltage slope 15 dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns T stg Storage temperature - 55 to 150 T j Max. operating junction temperature 150 C 1. Pulse width limited by safe operating area. 2. I SD 4.8 A, di/dt 400 A/μs; V DS peak < V (BR)DSS, V DD =400 V 3. V DS 480 V Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 2.6 C/W R (1) thj-amb Thermal resistance junction-ambient max 59 C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) Single pulse avalanche energy (starting T j =25 C, I D = I AR ; V DD =50) 1.5 A 30 mj DocID Rev 2 3/16 16
4 Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) I D = 1 ma, V GS = V V DS = 600 V V DS = 600 V, T C =125 C Gate-body leakage I GSS V current (V DS = 0) GS = ± 25 V ±10 μa V GS(th) Gate threshold voltage V DS = V GS, I D = 250 μa V Static drain-source R DS(on) V on-resistance GS = 10 V, I D = 2.4 A Ω μa μa Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 100 V, f = 1 MHz, pf C rss V GS = 0 Reverse transfer capacitance pf Coss eq.(1) Equivalent output capacitance V DS = 0 to 480 V, V GS = pf R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 480 V, I D = 5.5 A, nc Q gs Gate-source charge V GS = 10 V nc Q gd Gate-drain charge (see Figure 15) nc 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t V DD = 300 V, I D = 3 A, r Rise time ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off delay time ns (see Figure 14 and Figure 19) t f Fall time ns 4/16 DocID Rev 2
5 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current A I (1) SDM Source-drain current (pulsed) - 19 A V (2) SD Forward on voltage I SD = 5.5 A, V GS = V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 5.5 A, di/dt = 100 A/μs V DD = 60 V (see Figure 16) μc I RRM Reverse recovery current A t rr Reverse recovery time I SD = 5.5 A, di/dt = 100 A/μs ns Q rr Reverse recovery charge V DD = 60 V, T j = 150 C μc I RRM Reverse recovery current (see Figure 16) A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID Rev 2 5/16 16
6 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) AM17946v1 K δ=0.5 ZthPowerFlat_5x6_ Operation in this area is Limited by max RDS(on) 10µs 100µs 1ms Tj=150 C Tc=25 C Single pulse VDS(V) Figure 4. Output characteristics 10ms 10-2 Single pulse tp(s) Figure 5. Transfer characteristics ID (A) 10 VGS=7, 8, 9, 10V AM15865v1 ID (A) 10 VDS=17 V AM15866v1 8 6V V V VDS(V) Figure 6. Gate charge vs gate-source voltage VGS(V) Figure 7. Static drain-source on-resistance VGS (V) VDS ID=5.5A VDD=480V AM15869v1 VDS (V) RDS(on) (Ω) VGS=10A AM17947v Qg(nC) ID(A) 6/16 DocID Rev 2
7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy C (pf) AM15870v1 Eoss (µj) AM15874v Ciss 2 10 Coss 1 1 Crss VDS(V) Figure 10. Normalized gate threshold voltage vs temperature VDS(V) Figure 11. Normalized on-resistance vs temperature VGS(th) (norm) 1.1 ID=250µA AM15871v1 RDS(on) (norm) 2 ID=2.4 A VGS=10 V AM17948v TJ( C) Figure 12. Source-drain diode forward characteristics VSD (V) TJ=-50 C TJ=150 C TJ=25 C AM17949v ISD(A) TJ( C) Figure 13. Normalized V DS vs temperature VDS (norm) 1.11 ID=1mA AM15867v TJ( C) DocID Rev 2 7/16 16
8 Test circuits 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton toff tdon tr tdoff tf 0 90% 10% VDS 10% 90% VGS 90% 0 10% AM01473v1 8/16 DocID Rev 2
9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DocID Rev 2 9/16 16
10 Package mechanical data Figure 20. PowerFLAT 5x6 HV drawing _Rev_B 10/16 DocID Rev 2
11 Package mechanical data Table 9. PowerFLAT 5x6 HV mechanical data Dim. mm Min. Typ. Max. A A A b D E D E e 1.27 L K DocID Rev 2 11/16 16
12 Package mechanical data Figure 21. PowerFLAT 5x6 HV recommended footprint (dimensions are in mm) _Rev_B_footprint 12/16 DocID Rev 2
13 REF.R0.50 Packaging mechanical data 5 Packaging mechanical data Figure 22. PowerFLAT 5x6 tape (a) T (0.30 ±0.05) Do Ø1.55±0.05 Y P 2 2.0±0.1 (I) P 0 4.0±0.1 (II) E1 1.75±0.1 C L Bo (5.30±0.1) D1 Ø1.5 MIN. REF 0.20 F(5.50±0.1)(III) W(12.00±0.3) Y Ko (1.20±0.1) P1(8.00±0.1) Ao(6.30±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs _Tape_rev_C Pin 1 identification Figure 23. PowerFLAT 5x6 package orientation in carrier tape. a. All dimensions are in millimeters. DocID Rev 2 13/16 16
14 Packaging mechanical data Figure 24. PowerFLAT 5x6 reel R0.60 PART NO W3 11.9/15.4 W (max) R ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES A 330 (+0/-4.0) ESD LOGO 06 PS ØA W (+2/-0) 128 R1.10 Ø All dimensions are in millimeters CORE DETAIL _Reel_rev_C 14/16 DocID Rev 2
15 Revision history 6 Revision history Table 10. Document revision history Date Revision Changes 09-Dec First release. 17-Mar Datasheet status promoted from preliminary data to production data Updated: Figure 3 Minor text changes DocID Rev 2 15/16 16
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Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
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STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
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STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
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N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
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P-channel 30 V, 0.024 Ω typ., 12 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DSS R DS(on) max I D P TOT DPAK 2 1 3 STD26P3LLH6 30 V 0.030
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STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H 2 PAK-2 and TO-220 Datasheet - production data TAB TAB DPAK
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N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STW57N65M5-4 710 V 0.063 Ω 42 A Higher V DS
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N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features
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N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D STW69N65M5-4 710 V 0.045 Ω 58 A Higher V DS
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Nchannel 55 V, 7.0 mω, 80 A DPAK STripFET III Power MOSFET Features Order code V DSS R DS(on) max. I D Pw 55 V < 8.5 mω 80 A 110 W Low threshold drive 100% avalanche tested Application Switching applications
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N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on)max. I D 650 V 0.5 Ω 8 A DPAK (TO-252) Extremely low gate charge
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STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
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STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)
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STSN3LH5 Nchannel 30 V, 0.019 Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V 0.021 Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low
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Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
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N-channel 100 V, 1.9 mω typ., 180 A STripFET VII DeepGATE Power MOSFET in H 2 PAK-2 and H 2 PAK-6 packages Features Datasheet - production data Order codes V DS R DS(on) max. I D TAB TAB STH310N10F7-2
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STL7N6M N-channel 6 V,.9 Ω typ., 5 A MDmesh M Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V DS @ Tjmax R DS(on) max 7 6 5 STL7N6M 65 V.5 Ω 5 A Extremely low
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Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
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Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET (with fast diode) in D 2 PAK, TO-220FP, TO-220 and TO-247 Datasheet production data TAB Features
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Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
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Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package Features TAB Order code V DS @ T Jmax R DS(on) max. I D STP15N60M2-EP 650 V 0.378 Ω 11 A TO-220 D(2, TAB) 1 2
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STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order codes Marking Package Packaging. STD13N65M2 13N65M2 DPAK Tape and reel
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
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N-channel 100 V, 5 mω typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS R DS(on) max. I D P TOT STL110N10F7 100 V 6 mω 107 A 136 W Among the lowest R DS(on) on the
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Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
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Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
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Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages TAB 3 2 1 DPAK Features Order code V DS at T J max. R DS(on) max. I D Packages TAB STD16N50M2
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Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
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N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
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N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
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N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
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STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Features Datasheet - production data Order codes V DS R DS(on) max. I D P W TAB TAB STB4N62K3
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Datasheet N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS @ T Jmax R DS(on) max. I D STD5N60M2 STP5N60M2
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STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh II Power MOSFET I 2 PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V DSS (@T jmax )R DS(on) max I D STD11NM60ND
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STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D 2 PAK, TO-220FP, TO-220 and TO-247 Features TAB Datasheet production data Order codes STB18NM60N
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More information100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Datasheet N-channel 620 V, 1.7 Ω typ., 3.8 A MDmesh K3 Power MOSFET in DPAK package Features TAB Order codes V DS R DS(on) max. I D P TOT 2 3 1 DPAK D(2, TAB) STD4N62K3 620 V 2 Ω 3.8 A 70 W 100% avalanche
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Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)
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STB120N4LF6 STD120N4LF6 Nchannel 40 V, 3.1 mω, 80 A DPAK, D²PAK STripFET VI DeepGATE Power MOSFET Features Order codes V DSS R DS(on) max I D STB120N4LF6 40 V 4.0 mω 80 A STD120N4LF6 40 V 4.0 mω 80 A Logic
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STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data TAB Features TAB
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N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, IPAK Features Datasheet production data Order codes V DSS R DS(on) max. I D Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω 5.4
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N-channel 6 V,.23 Ω typ., 13 A MDmesh M2 EP Power MOSFET in an I²PAK package TAB Features Order code V DS R DS(on) max. I D STI2N6M2-EP 6 V.278 Ω 13 A I²PAK D(2, TAB) 1 2 3 Extremely low gate charge Excellent
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STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in D 2 PAK, DPAK, TO-220FP and TO-220 Datasheet - production data TAB TAB Features
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package Features TO-247 1 3 2 Order code V DS @ T Jmax R DS(on) max. I D STW25N60M2-EP 650 V 0.188 Ω 18 A Extremely low
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Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
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STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
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Features STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Order codes V DSS R DS(on)
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Nchannel 600 V, 0.075 Ω, 35 A TO247 FDmesh Power MOSFET (with fast diode) Features Type V DSS @ T JMAX R DS(on) max STW43NM60ND 650 V < 0.088 Ω 35 A The worldwide best R DS(on) *area amongst the fast recovery
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STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D 2 PAK, I 2 PAK, TO-220 and TO-247 packages TAB TAB Features Order codes V DS @ T
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