Features STB4N62K3 STD4N62K3. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging

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1 STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Features Datasheet - production data Order codes V DS R DS(on) max. I D P W TAB TAB STB4N62K3 STD4N62K3 620 V 2 Ω 3.8 A 70 W D²PAK DPAK Figure 1. Internal schematic diagram D(2,TAB) 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications Switching applications G(1) S(3) AM01476v1 Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order code Marking Packages Packaging STB4N62K3 STD4N62K3 4N62K3 D²PAK DPAK Tape and reel September 2013 DocID18337 Rev 3 1/22 This is information on a product in full production.

2 Contents STB4N62K3, STD4N62K3 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /22 DocID18337 Rev 3

3 STB4N62K3, STD4N62K3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 620 V V GS Gate- source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 3.8 A I D Drain current (continuous) at T C = 100 C 2 A I (1) DM Drain current (pulsed) 15.2 A P TOT Total dissipation at T C = 25 C 70 W I AR Avalanche current, repetitive or notrepetitive (pulse width limited by T j max) 3.8 A E AS V ESD(G-S) dv/dt (2) V ISO Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 50V) Gate source ESD(HBM-C = 100 pf, R = 1.5 kω) 1. Pulse width limited by safe operating area. 2. I SD 3.8 A, di/dt = 400 A/µs, V DD = 80% V (BR)DSS, VDS peak V(BR)DSS. 115 mj 2500 V Peak diode recovery voltage slope 12 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C V Table 3. Thermal data Symbol Parameter D²PAK Value DPAK Unit R thj-case Thermal resistance junction-case max 1.79 C/W R (1) thj-pcb Thermal resistance junction-pcb max C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DocID18337 Rev 3 3/22 22

4 Electrical characteristics STB4N62K3, STD4N62K3 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current V GS = 0, I D = 1 ma 620 V V GS = 0, V DS = 620V 1 µa V GS = 0 V DS = 620V, T C =125 C 50 µa Gate-body leakage I GSS V current DS = 0, V GS = ± 20 V ± 10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 50 µa V Static drain-source on- R DS(on V resistance GS = 10 V, I D = 1.9 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance 550 pf C oss Output capacitance V DS = 50 V, f = 1 MHz, 42 pf C rss V GS = 0 Reverse transfer capacitance 7 pf (1) Equivalent output C oss eq. capacitance V DS = 0 to 496 V, V GS = 0 27 pf R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 496 V, I D = 3.8 A, 22 nc Q gs Gate-source charge V GS = 10 V 4 nc Q gd Gate-drain charge (see Figure 18) 13 nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/22 DocID18337 Rev 3

5 STB4N62K3, STD4N62K3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns V DD = 300 V, I D = 1.9 A, t r Rise time ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off-delay time (see Figure 17) ns t f Fall time ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current A I (1) SDM Source-drain current (pulsed) A V (2) SD Forward on voltage I SD = 3.8 A, V GS = V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 3.8 A, di/dt = 100 A/µs V DD = 60 V (see Figure 22) µc I RRM Reverse recovery current - 13 A t rr Reverse recovery time I SD = 3.8 A, di/dt = 100 A/µs ns Q rr Reverse recovery charge V DD = 60 V, T j = 150 C µc I RRM Reverse recovery current (see Figure 22) - 14 A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D = V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID18337 Rev 3 5/22 22

6 Electrical characteristics STB4N62K3, STD4N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK ID (A) AM07172v Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse 10µs 100µs 1ms 10ms VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK ID (A) AM07173v µs Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse 100µs 1ms 10ms VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics ID (A) VGS=10V 7V AM07175v1 ID (A) 6 5 VDS=15V AM07176v V 5V VDS(V) VGS(V) /22 DocID18337 Rev 3

7 STB4N62K3, STD4N62K3 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance VGS (V) VDS VDD=496V ID=3.8A VGS AM07177v RDS(on) (Ω) VGS=10V AM07178v Qg(nC) Figure 10. Capacitance variations ID(A) Figure 11. Output capacitance stored energy C (pf) AM07179v1 Eoss (µj) AM07180v Ciss Coss Crss VDS(V) Figure 12. Normalized gate threshold voltage vs temperature VDS(V) Figure 13. Normalized on-resistance vs temperature VGS(th) (norm) 1.10 AM07181v1 RDS(on) (norm) 2.5 AM07182v TJ( C) TJ( C) DocID18337 Rev 3 7/22 22

8 Electrical characteristics STB4N62K3, STD4N62K3 Figure 14. Maximum avalanche energy vs starting Tj EAS AM07184v1 (mj) 120 ID=3.8 A 110 VDD=50 V TJ( C) Figure 15. Normalized B VDSS vs temperature AM07183v1 BVDSS (norm) TJ( C) Figure 16. Source-drain diode forward characteristics VSD (V) TJ=150 C TJ=-50 C TJ=25 C AM08888v ISD(A) 8/22 DocID18337 Rev 3

9 STB4N62K3, STD4N62K3 Test circuits 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped Inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 DocID18337 Rev 3 9/22 22

10 Package mechanical data STB4N62K3, STD4N62K3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 10/22 DocID18337 Rev 3

11 STB4N62K3, STD4N62K3 Package mechanical data Table 9. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID18337 Rev 3 11/22 22

12 Package mechanical data STB4N62K3, STD4N62K3 Figure 23. D²PAK (TO-263) drawing _T Figure 24. D²PAK footprint (a) Footprint a. All dimension are in millimeters 12/22 DocID18337 Rev 3

13 STB4N62K3, STD4N62K3 Package mechanical data Table 10. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L (L1) 2.80 L L R 0.20 V2 0 8 DocID18337 Rev 3 13/22 22

14 Package mechanical data STB4N62K3, STD4N62K3 Figure 25. DPAK (TO-252) type A drawing _K_type_A 14/22 DocID18337 Rev 3

15 STB4N62K3, STD4N62K3 Package mechanical data Table 11. DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e e H L L L L DocID18337 Rev 3 15/22 22

16 Package mechanical data STB4N62K3, STD4N62K3 Figure 26. DPAK (TO-252) type E drawing _K_type_E 16/22 DocID18337 Rev 3

17 STB4N62K3, STD4N62K3 Package mechanical data Figure 27. DPAK footprint (b) Footprint_REV_K b. All dimensions are in millimeters DocID18337 Rev 3 17/22 22

18 Packaging mechanical data STB4N62K3, STD4N62K3 5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty /22 DocID18337 Rev 3

19 STB4N62K3, STD4N62K3 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data (continued) Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. P R 40 T W Figure 28. Tape for D²PAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 DocID18337 Rev 3 19/22 22

20 Packaging mechanical data STB4N62K3, STD4N62K3 Figure 29. Reel for D²PAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At slot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID18337 Rev 3

21 STB4N62K3, STD4N62K3 Revision history 6 Revision history Table 14. Document revision history Date Revision Changes 16-Dec First release. 26-Apr Sep Added min and max values for R G in Table 5: Dynamic and Section 5: Packaging mechanical data. Updated Section 4: Package mechanical data. Minor text changes. Updated: Section 4: Package mechanical data Minor text changes DocID18337 Rev 3 21/22 22

22 STB4N62K3, STD4N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 22/22 DocID18337 Rev 3

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