STB120N4LF6 STD120N4LF6
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1 STB120N4LF6 STD120N4LF6 Nchannel 40 V, 3.1 mω, 80 A DPAK, D²PAK STripFET VI DeepGATE Power MOSFET Features Order codes V DSS R DS(on) max I D STB120N4LF6 40 V 4.0 mω 80 A STD120N4LF6 40 V 4.0 mω 80 A Logic level drive 100% avalanche tested 1 DPAK 3 1 D²PAK 3 Application Switching applications Automotive Description This product is a 40 V Nchannel STripFET VI Power MOSFET based on the ST s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Packages Packaging STB120N4LF6 STD120N4LF6 120N4LF6 D²PAK DPAK Tape and reel February 2011 Doc ID Rev 2 1/
2 Contents STB120N4LF6, STD120N4LF6 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /18 Doc ID Rev 2
3 STB120N4LF6, STD120N4LF6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 40 V V GS Gatesource voltage ± 20 V (1) I D Drain current (continuous) at T C = 25 C 80 A I D Drain current (continuous) at T C = 100 C 80 A (2) I DM Drain current (pulsed) 320 A P TOT Total dissipation at T C = 25 C 110 W T stg Storage temperature T j Operating junction temperature 55 to 175 C 1. Limited by wire bonding 2. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter DPAK Value D²PAK Unit R thjcase Thermal resistance junctioncase max 1.36 C/W R thjpcb Thermal resistance junctionpcb max (1) C/W 1. When mounted on 1 inch 2 2 oz. Cu board. Table 4. Avalanche data Symbol Parameter Value Unit I AV Notrepetitive avalanche current 40 A (1) E AS Single pulse avalanche energy 394 mj 1. Starting Tj = 25 C, I D = 40 A, V DD = 25 V Doc ID Rev 2 3/18
4 Electrical characteristics STB120N4LF6, STD120N4LF6 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown Voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = 0 40 V V DS = 20 V V DS = 20 V,Tc = 125 C 1 10 µa µa V GS = ± 20 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 1 3 V R DS(on) Static drainsource on resistance V GS = 5 V, I D = 40 A mω V GS = 10 V, I D = 40 A mω Table 6. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gatesource charge Gatedrain charge V DS = 25 V, f=1 MHz, V GS = 0 V Q g Q gs Q gd V DD = 20 V, I D = 80 A V GS = 10 V (see Figure 14) nc nc nc R G Intrinsic gate resistance f=1 MHz open drain 1.35 Ω pf pf pf 4/18 Doc ID Rev 2
5 STB120N4LF6, STD120N4LF6 Electrical characteristics Table 7. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turnon delay time Rise time Turnoff delay time Fall time V DD = 20 V, I D = 40 A, R G = 4.7 Ω, V GS = 10 V Figure ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 40 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 80 A, di/dt = 100 A/µs, V DD = 32 V, T J = 150 C Figure A A ns nc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 2 5/18
6 Electrical characteristics STB120N4LF6, STD120N4LF6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) Operation in this area is Limited by max RDS(on) Tj=175 C Tc=25 C Single pulse AM08964v1 100µs 1ms 1 10ms VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=10V AM08965v1 5V ID (A) 300 VDS=2V AM08966v V 3V VDS(V) VGS(V) Figure 6. Normalized B VDSS vs temperature Figure 7. Static drainsource on resistance BVDSS (norm) 1.05 ID=1mA AM08967v1 RDS(on) (mω) 3.5 VGS=10V AM08968v TJ( C) ID(A) 6/18 Doc ID Rev 2
7 STB120N4LF6, STD120N4LF6 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations VGS (V) 12 VDD=20V ID=80A AM08969v1 C (pf) AM08970v1 Ciss Coss 4 Crss Qg(nC) VDS(V) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature VGS(th) (norm) 1.2 ID=250µA AM08971v1 RDS(on) (norm) 2.0 ID=40A VGS=10V AM08972v TJ( C) TJ( C) Figure 12. VSD (V) 1.0 Sourcedrain diode forward characteristics TJ=55 C AM08973v TJ=25 C TJ=175 C ISD(A) Doc ID Rev 2 7/18
8 Test circuits STB120N4LF6, STD120N4LF6 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. switching and diode recovery times Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/18 Doc ID Rev 2
9 STB120N4LF6, STD120N4LF6 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and products status are available at: ECOPACK is an ST trademark. Doc ID Rev 2 9/18
10 Package mechanical data STB120N4LF6, STD120N4LF6 Table 9. Dim. D²PAK (TO263) mechanical data mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /18 Doc ID Rev 2
11 STB120N4LF6, STD120N4LF6 Package mechanical data Figure 19. D²PAK (TO263) drawing _R Figure 20. D²PAK footprint (a) Footprint a. All dimension are in millimeters Doc ID Rev 2 11/18
12 Package mechanical data STB120N4LF6, STD120N4LF6 Table 10. Dim. DPAK (TO252) mechanical data mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L 1 L L L R 0.20 V /18 Doc ID Rev 2
13 STB120N4LF6, STD120N4LF6 Package mechanical data Figure 21. DPAK (TO252) drawing _G Figure 22. DPAK footprint (b) AM08850v1 b. All dimension are in millimeters Doc ID Rev 2 13/18
14 Packaging mechanical data STB120N4LF6, STD120N4LF6 5 Packaging mechanical data Table 11. D²PAK (TO263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /18 Doc ID Rev 2
15 STB120N4LF6, STD120N4LF6 Packaging mechanical data Table 12. DPAK (TO252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W Doc ID Rev 2 15/18
16 Packaging mechanical data STB120N4LF6, STD120N4LF6 Figure 23. Tape for D²PAK(TO263) and DPAK (TO252) 10 pitches cumulative tolerance on tape +/ 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 24. Reel for D²PAK(TO263) and DPAK (TO252) REEL DIMENSIONS 40mm min. T Access hole At sl ot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 Doc ID Rev 2
17 STB120N4LF6, STD120N4LF6 Revision history 6 Revision history Table 13. Document revision history Date Revision Changes 14Dec First release 23Feb Document status promoted from preliminary data to datasheet. Doc ID Rev 2 17/18
18 STB120N4LF6, STD120N4LF6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 18/18 Doc ID Rev 2
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