Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
|
|
- Loreen Ward
- 5 years ago
- Views:
Transcription
1 N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest R DS(on) on the market Excellent figure of merit (FoM) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1. Device summary Order code Marking Package Packaging STB100N6F7 100N6F7 D²PAK Tape and Reel December 2015 DocID Rev 3 1/15 This is information on a product in full production.
2 Contents STB100N6F7 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information Packing information Revision history /15 DocID Rev 3
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 60 V V GS Gate-source voltage ± 20 V I D Drain current (continuous) at T C = 25 C 100 A I D Drain current (continuous) at T C = 100 C 75 A (1) I DM Drain current (pulsed) 400 A P TOT Total dissipation at T C = 25 C 125 W E (2) AS Single pulse avalanche energy 200 mj T j Operating junction temperature T stg Storage temperature - 55 to 175 C 1. Pulse width is limited by safe operating area 2. Starting Tj =25 C, I D = 20 A, V DD = 30 V Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 1.2 C/W R (1) thj-pcb thermal resistance junction-pcb 35 C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu DocID Rev 3 3/15 15
4 Electrical characteristics STB100N6F7 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage Drain current V GS = 0 V, I D = 1 ma 60 V V GS = 0 V, V DS = 60 V 1 µa V GS = 0 V, V DS = 60 V, T J = 125 C 100 µa I GSS Gate-source leakage current V DS = 0 V, V GS = 20 V 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 2 4 V R DS(on) Static drain-source on-resistance V GS =10 V, I D = 50 A mω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V GS = 0 V, V DS = 25V, pf C rss f = 1 MHz Reverse transfer capacitance pf Q g Total gate charge nc Q gs Gate-source charge V DD = 30 V, I D = 100 A, V GS = 10 V nc Q gd Gate-drain charge nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Rise time V DD = 30 V, I D = 50 A, ns t d(off) Turn-off-delay time R G =4.7Ω, V GS =10V ns t f Fall time ns 4/15 DocID Rev 3
5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit (1) V SD Forward on voltage V GS = 0 V, I SD = 100A V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 100 A, di/dt = 100 A/µs, V DD = 48 V - 47 nc I RRM Reverse recovery current A 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID Rev 3 5/15 15
6 Electrical characteristics STB100N6F7 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 6. Gate charge vs gate-source voltage Figure 5. Transfer characteristics Figure 7. Static drain-source on-resistance 6/15 DocID Rev 3
7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized V (BR)DSS vs temperature DocID Rev 3 7/15 15
8 Test circuits STB100N6F7 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/15 DocID Rev 3
9 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 19. D²PAK (TO-263) package outline DocID Rev 3 9/15 15
10 Package information STB100N6F7 Table 8. D²PAK (TO-263) package mechanical data Dim. mm Min. Typ. Max. A A b b c c D D D E E E e 2.54 e H J L L L R 0.4 V /15 DocID Rev 3
11 Package information Figure 20. D²PAK footprint (a) a. All dimension are in millimeters DocID Rev 3 11/15 15
12 Packing information STB100N6F7 5 Packing information Figure 21. Tape 12/15 DocID Rev 3
13 Packing information Figure 22. Reel Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 3 13/15 15
14 Revision history STB100N6F7 6 Revision history Table 10. Document revision history Date Revision Changes 26-Nov First release. 14-Jan Dec Text amendments throughout document On cover page: Changed title description Changed features and descriptions Updated Table 2: Absolute maximum ratings Updated Table 4: On/off states Updated Table 5: Dynamic Updated Table 6: Switching times Updated Table 7: Source drain diode Added Section 2.1: Electrical characteristics (curves) Updated Section 4: Package mechanical data Updated Table 3: Thermal data. Minor text changes. 14/15 DocID Rev 3
15 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID Rev 3 15/15 15
N-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationN-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationN-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube
N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
More informationPrerelease product(s)
Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
More informationN-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0016 Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D STL160NS3LLH7 30 V 0.0021
More informationN-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.
N-channel 30 V, 0.0027 Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Features Datasheet - production data Order code V DS R DS(on) max I D 30 V 0.0034 Ω 120 A Very
More informationAutomotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.
Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL160N4F7 160N4F7 PowerFLAT TM 5x6 Tape and reel
N-channel 40 V, 2.1 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max I D STL160N4F7 40 V 2.5 mω 120 A Among the lowest
More informationFeatures. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data Order code V DS R DS(on) max I D TAB DPAK 1 3 STD12N50M2 500 V 0.38 Ω 10 A Extremely low
More informationAmong the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
N-channel 100 V, 5 mω typ., 107 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS R DS(on) max. I D P TOT STL110N10F7 100 V 6 mω 107 A 136 W Among the lowest R DS(on) on the
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order codes Marking Package Packaging. STD13N65M2 13N65M2 DPAK Tape and reel
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
More informationP-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D
Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
More informationSTP16N65M2, STU16N65M2
STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
More informationSTD12NF06LT4. N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package. Datasheet. Features. Applications.
Datasheet N-channel 60 V, 70 mω typ., 12 A, StripFET II Power MOSFET in a DPAK package Features TAB Order code V DS R DS(on) max. I D DPAK D(2, TAB) 2 1 3 STD12NF06LT4 60 V 90 mω 12 A Exceptional dv/dt
More informationSTB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet
STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mω typ., 80 A STripFET F7 Power MOSFETs in D 2 PAK, DPAK, TO-220FP, I 2 PAK and TO-220 packages TAB TAB Features
More informationSTO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications.
Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)
More informationAutomotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features
Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STL6N3LLH6 STG1 PowerFLAT 2x2 Tape and reel
Nchannel 30 V, 0.02 Ω typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 2 3 STL6N3LLH6 30 V 0.025Ω (V GS= 0 V) 0.04Ω
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STH270N4F N4F3 H 2 PAK-2 Tape and reel
Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
More informationN-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages. Features. Description. AM15572v1. Table 1.
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh M2 Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D TAB 1 3 2 D
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order code Marking Package Packaging. STD7N65M2 7N65M2 DPAK Tape and reel
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data TAB Order code V DS R DS(on) max STD7N65M2 650 V 1.15 Ω 5 A I D DPAK 1 3 Extremely low gate
More informationN-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.175 Ω typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package Features TO-247 1 3 2 Order code V DS @ T Jmax R DS(on) max. I D STW25N60M2-EP 650 V 0.188 Ω 18 A Extremely low
More informationSTB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
More informationN-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages. Features STU2N105K5. Description.
STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data TAB Features DPAK 1 3 Order codes V DS R DS(on)
More informationSTB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
More informationSTD12N65M2. N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package. Features. Applications. Description DPAK (TO-252)
N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on)max. I D 650 V 0.5 Ω 8 A DPAK (TO-252) Extremely low gate charge
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Packages Packaging. STF6N95K5 6N95K5 TO-220FP Tube
N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
More informationOrder code V DS R DS(on) max. I D
N-channel 6 V,.23 Ω typ., 13 A MDmesh M2 EP Power MOSFET in an I²PAK package TAB Features Order code V DS R DS(on) max. I D STI2N6M2-EP 6 V.278 Ω 13 A I²PAK D(2, TAB) 1 2 3 Extremely low gate charge Excellent
More informationN-channel 30 V, Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3. Features.
N-channel 30 V, 0.0027 Ω typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V DS R DS(on) max I D STL23NS3LLH7 30 V 0.0037
More informationOrder code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
More informationFeatures. Features. Description. Table 1: Device summary Order code Marking Package Packaging STL33N60M2 33N60M2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.115 Ω typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V DS @ T Jmax R DS(on)max I D 5 STL33N60M2 650 V 0.135 Ω 22 A 4
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationI D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationSTB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5
STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh K5 Power MOSFETs in D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data TAB Features TAB 1
More informationFeatures. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package Features TAB Order code V DS @ T Jmax R DS(on) max. I D STP15N60M2-EP 650 V 0.378 Ω 11 A TO-220 D(2, TAB) 1 2
More informationAutomotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.
Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
More informationFeatures. Description S 7 6 D 5 D 4 S GIPG ALS
STL7N6M N-channel 6 V,.9 Ω typ., 5 A MDmesh M Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V DS @ Tjmax R DS(on) max 7 6 5 STL7N6M 65 V.5 Ω 5 A Extremely low
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Package Packaging. STF10N80K5 10N80K5 TO-220FP Tube
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT STF10N80K5 800 V 0.600 Ω 9 A 30 W TO-220FP Figure
More informationSTL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.
Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
More informationOrder code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses
More informationSTT7P2UH7. P-channel 20 V, Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package. Applications. Description.
P-channel 20 V, 0.0195 Ω typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications
More informationSTH275N8F7-2AG, STH275N8F7-6AG
STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mω typ., 180 A, STripFET F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Features Order code VDS RDS(on) max. ID
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationN-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.
N-channel 30 V, 0.02 Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 4 5 6 2 SOT23-6L 3 STT6N3LLH6 30 V
More informationOrder code V DS R DS(on) max I D
Datasheet N-channel 6 V,.23 Ω typ., 13 A, MDmesh M2 EP Power MOSFET in a TO-22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on) max I D STF2N6M2-EP 6 V.278 Ω 13 A Extremely low gate charge
More informationAutomotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL210N4F7AG 40 V 1.6 mω 120
More informationSTB22NM60N, STF22NM60N, STP22NM60N
Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
More informationSTD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages TAB Features TAB IPAK 3 1 2 TAB 2 3 1 DPAK TO-220FP
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel
N-channel 60 V, 2.4 mω typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mω 140 A 125 W Among
More informationFeatures. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.
N-channel 60 V, 0.019 Ω typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N6F7 60 V 0.023 Ω 8 A 1 2 3 4 Among the
More informationSTS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
More informationContents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
More informationAutomotive-grade N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL225N6F7AG 60 V 1.4 mω 120
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW40N65M2 40N65M2 TO-247 Tube
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D STW40N65M2 650 V 0.099 Ω 32 A TO-247 1 3 2 Extremely
More informationSTB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet
STB6NK90ZT4, STP6NK90Z STP6NK90ZFP, STW7NK90Z Datasheet N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH Power MOSFET in D 2 PAK, TO-220, TO-220FP and TO-247 packages TAB TAB Features 3 1 2 D PAK TO-220 1
More informationFeatures. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube
N- Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STWA70N60DM2 600 V 66 A 446 W 3 2 1 TO-247 long leads Figure 1: Internal schematic
More informationOrder code V DS R DS(on ) max. I D
Datasheet N-channel 9 V,.21 Ω typ., 2 A MDmesh K5 Power MOSFET in a TO 22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on ) max. I D STF2N9K5 9 V.25 Ω 2 A Industry s lowest R DS(on) x area
More informationSTB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 7 mω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 8 mω 70 A 100 W Among the
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STL220N6F7 220N6F7 PowerFLAT TM 5x6 Tape and reel
N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL220N6F7 60 V 1.4 mω 120 A Among the lowest
More informationN-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging
Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
More informationN-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.
N-channel 100 V, 0.062 Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package Features Datasheet - production data Order code V DS R DS(on) max I D 1 2 3 STL3N10F7 100 V 0.07 Ω 4 A 1
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel
N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
More informationN-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.
STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
More informationSTH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
N-channel 40 V, 0.0018 mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V 0.0022 Ω 120 A 150 W 2
More informationSTB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet
STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D 2 PAK, I 2 PAK, TO-220 and TO-247 packages TAB TAB Features Order codes V DS @ T
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationAutomotive-grade N-channel 60 V, Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package. Features. Description.
Automotivegrade Nchannel 60 V, 0.012 Ω typ., 60 A STripFET II Power MOSFET in a D²PAK package Datasheet production data Features TAB Order code V DS R DS(on) max. I D P TOT 60 V 0.014 Ω 60 A 110 W 1 3
More informationDual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging
Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
More information100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Datasheet N-channel 620 V, 1.7 Ω typ., 3.8 A MDmesh K3 Power MOSFET in DPAK package Features TAB Order codes V DS R DS(on) max. I D P TOT 2 3 1 DPAK D(2, TAB) STD4N62K3 620 V 2 Ω 3.8 A 70 W 100% avalanche
More informationN-channel 20 V, Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package. Order code Marking Package Packaging
N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V DSS R DS(on) max I D 20 V < 0.003 Ω 28 A Improved die-to-footprint ratio Very low profile package Very
More informationSTD7NM60N, STF7NM60N, STU7NM60N
Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD7NM60N STF7NM60N 600 V 0.9 Ω 5 A DPAK TO-220FP
More informationSTH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5
STH12N120K5-2, STP12N120K5, N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V DS R DS(on) max.
More informationDual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package. Features. Description
Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code VDS RDS(on) max. ID STL50DN6F7 60 V 11 mω 57 A Among
More informationSTL75N8LF6. N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET. Features. Applications. Description
N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET Features Order code V DSS R DS(on) max STL75N8LF6 80 V < 7.4 mω 18 A (1) 1. The value is rated according R thj-pcb I D R DS(on)
More informationSTD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet - production data Order code V DS
More informationSTD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages TAB Features TAB 2 3 1 DPAK Order code V DS R DS(on) max. I D Package STD3NK90ZT4 DPAK STP3NK90Z
More informationSTD7N60M2, STP7N60M2, STU7N60M2
Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
More informationSTF12N120K5, STFW12N120K5
STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
More information1 Electrical ratings Electrical characteristics Electrical characteristics (curves)... 6
N-channel 600 V, 0.094 Ω typ., 28 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP35N60DM2 600 V 0.110 Ω 28 A 210 W Figure
More informationSTI260N6F6 STP260N6F6
STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
More informationSTD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
More informationSTD4N52K3, STP4N52K3, STU4N52K3
Datasheet N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS R DS(on) max. I D Package STD4N52K3 2.5
More informationSTB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages TAB TAB Features 1 3
More informationN-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4
STR2N2VH5, STT5N2VH5 Nchannel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in SOT23 and SOT236L packages Features Datasheet preliminary data Order codes V DS R DS(on) max I D P TOT 4 3 STR2N2VH5 0.03
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
More informationSTD5N60M2, STP5N60M2, STU5N60M2
Datasheet N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS @ T Jmax R DS(on) max. I D STD5N60M2 STP5N60M2
More informationN-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationAutomotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL120N4F6AG 40 V 3.6 mω 55 A
More informationSTD65N55LF3 Features Order code DS(on) DSS max. DPAK Application Description Figure 1. Internal schematic diagram
Nchannel 55 V, 7.0 mω, 80 A DPAK STripFET III Power MOSFET Features Order code V DSS R DS(on) max. I D Pw 55 V < 8.5 mω 80 A 110 W Low threshold drive 100% avalanche tested Application Switching applications
More information