STD96N3LLH6. N-channel 30 V, Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET. Features. Application. Description
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1 Nchannel 30 V, Ω, 80 A, DPAK STripFET VI DeepGATE Power MOSFET Features Type V DSS R DS(on) max I D STD96N3LLH6 30 V Ω 80 A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) High avalanche ruggedness Low gate drive power losses Application Switching applications Automotive 1 DPAK 3 Description This product is an Nchannel Power MOSFET that utilizes the 6 th generation of design rules of ST s proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Figure 1. Internal schematic diagram G(1) D (TAB or 2) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD96N3LLH6 96N3LLH6 DPAK Tape and reel January 2011 Doc ID Rev 1 1/
2 Contents STD96N3LLH6 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /15 Doc ID Rev 1
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 30 V V GS Gatesource voltage ± 20 V (1) I D Drain current (continuous) at T C = 25 C 80 A I D Drain current (continuous) at T C = 100 C 61 A (2) I DM Drain current (pulsed) 320 A P TOT Total dissipation at T C = 25 C 70 W Derating factor 0.47 W/ C (3) E AS Single pulse avalanche energy 150 mj T stg Storage temperature 55 to 175 C T j Max. operating junction temperature 175 C 1. Limited by wire bonding. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 C, I AV = 55 A, L = 0.1 mh Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase max 2.14 C/W R thjamb Thermal resistance junctionambient max 100 C/W (1) R thjpcb Thermal resistance junctionpcb max 35 C/W T l Maximum lead temperature for soldering purpose 275 C 1. When mounted on FR4 board of 1 inch 2, 2 oz Cu. Doc ID Rev 1 3/15
4 Electrical characteristics STD96N3LLH6 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown Voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250 µa, V GS = 0 30 V V DS = 30 V V DS = 30 V, Tc = 125 C 1 10 µa µa V GS = ± 20 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V R DS(on) Static drainsource on resistance V GS = 10 V, I D = 40 A Ω V GS = 5.5 V, I D = 40 A Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V, f=1 MHz, V GS = pf pf pf Q g Q gs Q gd Total gate charge Gatesource charge Gatedrain charge V DD = 15 V, I D = 80 A V GS = 4.5 V Figure nc nc nc Q gs1 Q gs2 Pre V th gatetosource charge Post V th gatetosource charge V DD = 15 V, I D = 80 A Figure nc nc R G Gate input resistance f = 1 MHz gate bias Bias = 0 test signal level = 20 mv open drain 1 Ω 4/15 Doc ID Rev 1
5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r Turnon delay time Rise time V DD = 15 V, I D = 40 A, R G = 4.7 Ω, V GS = 5 V Figure ns ns t d(off) t f Turnoff delay time Fall time V DD = 15 V, I D = 40 A, R G = 4.7 Ω, V GS = 5 V Figure ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 40 A, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 80 A, di/dt = 100 A/µs, V DD = 24 V Figure A A ns nc A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 1 5/15
6 Electrical characteristics STD96N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) Operation in this area is Limited by max RDS(on) Tj=175 C Tc=25 C 100µs 1ms 10ms Sinlge pulse VDS(V) AM03376v1 K δ= Single pulse Zth=k Rthjc δ=tp/τ tp(s) tp τ 280dpc Figure 4. Output characteristics Figure 5. Transfer characteristics ID (A) VGS=10V 7V 6V AM03379v1 ID (A) VDS=2V AM03380v V V VDS(V) 3V VGS(V) Figure 6. Normalized BV DSS vs temperature Figure 7. Static drain source on resistance BVDSS AM03381v1 RDS(on) (mω) 7 VGS=10V AM03382v TJ( C) ID(A) 6/15 Doc ID Rev 1
7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations VGS (V) 12 VDD=15V ID=80A AM03378v1 C (pf) AM03377v1 10 Ciss Coss Crss Qg(nC) VDS(V) Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature VGS(th) (norm) AM03383v1 RDS(on) (norm) 1.8 VGS=10V ID=40A AM03384v TJ( C) TJ( C) Doc ID Rev 1 7/15
8 Test circuits STD96N3LLH6 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMAX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load switching and diode recovery times Figure 15. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. Figure 16. Unclamped inductive waveform AM01470v1 Pw Figure 17. Switching time waveform AM01471v1 V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/15 Doc ID Rev 1
9 Test circuits Figure 18. Gate charge waveform Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID Rev 1 9/15
10 Package mechanical data STD96N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 8. Dim. DPAK (TO252) mechanical data mm Min. Typ. Max. A A A b b c c D D E E e 2.28 e H L 1 L L L R 0.20 V /15 Doc ID Rev 1
11 Package mechanical data Figure 19. DPAK (TO252) drawing _G Doc ID Rev 1 11/15
12 Packaging mechanical data STD96N3LLH6 5 Packaging mechanical data Table 9. DPAK (TO252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W Figure 20. DPAK footprint (a) AM08850v1 a. All dimension are in millimeters 12/15 Doc ID Rev 1
13 Packaging mechanical data Figure 21. Tape for DPAK (TO252) 10 pitches cumulative tolerance on tape +/ 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 Figure 22. Reel for DPAK (TO252) REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID Rev 1 13/15
14 Revision history STD96N3LLH6 6 Revision history Table 10. Document revision history Date Revision Changes 27Jan First release. 14/15 Doc ID Rev 1
15 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America Doc ID Rev 1 15/15
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