STB160N75F3 STP160N75F3 - STW160N75F3
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1 General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO TO D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3 75V 4.5mΩ 120A (1) TO TO Current limited by package Ultra low on-resistance 100% Avalanche tested 1 D²PAK 3 Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique Single Feature Size strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STB160N75F3 160N75F3 D²PAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube February 2007 Rev 1 1/13 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 13
2 Contents Contents 1 Electrical ratings Electrical characteristics Test circuit Package mechanical data Packaging mechanical data Revision history /13
3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 75 V V GS Gate-source voltage ± 20 V I D (1) Drain current (continuous) at T C = 25 C 120 A I D (1) Drain current (continuous) at T C = 100 C 96 A I DM (2) P TOT (3) Drain current (pulsed) 480 A Total dissipation at T C = 25 C 315 W Derating factor 2.1 W/ C dv/dt Peak diode recovery voltage slope V/ns E AS Single pulse avalanche energy mj T j T stg Operating junction temperature Storage temperature -55 to 175 C 1. Current limited by package 2. Pulse width limited by safe operating area 3. Rated according to Rthj-case Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.48 C/W Rthj-amb Thermal resistance junction-ambient max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C 3/13
4 Electrical characteristics 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max Unit V (BR)DSS Drain-source breakdown voltage I D = 250µA, V GS = 0 75 V I DSS Zero gate voltage drain current (V GS = 0) V DS = Max rating, V DS = Max rating,@125 C µa µa I GSS Gate body leakage current (V DS = 0) V GS = ±20V ±200 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250µA 2 4 V R DS(on) Static drain-source on resistance V GS = 10V, I D = 60A D²PAK mω mω Table 4. Dynamic Symbol Parameter Test conditions Min Typ Max Unit g fs (1) Forward transconductance V DS =15V, I D = 4.5A I D = 10A S C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS =25V, f=1 MHz, V GS = pf pf pf Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD =44V, I D = 60A V GS =10V (see Figure 2) 110 nc nc nc 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/13
5 Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD =35 V, I D = 60A, R G =4.7Ω, V GS =10V, (see Figure 4) ns ns ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I (1) SDM Source-drain current Source-drain current (pulsed) A A V SD (2) Forward on voltage I SD =120A, V GS =0 1.5 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =120A, di/dt = 100A/µs, V DD =30 V, Tj=150 C (see Figure 3) ns nc A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/13
6 Test circuit 3 Test circuit Figure 1. Switching times test circuit for resistive load Figure 2. Gate charge test circuit Figure 3. Test circuit for inductive load switching and diode recovery times Figure 4. Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Figure 6. Switching time waveform 6/13
7 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 7/13
8 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A b b c D E e e F H J L L L L øp Q /13
9 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A b b b c D E e L L L øp ør S /13
10 Package mechanical data D 2 PAK MECHANICAL DATA TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B C C D D E E G L L L M R V2 0º 4º /13
11 Packaging mechanical data 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W * on sales type BASE QTY BULK QTY /13
12 Revision history 6 Revision history Table 7. Revision history Date Revision Changes 07-Feb First release 12/13
13 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 13/13
STB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
STB30NF10 STP30NF10 - STP30NF10FP
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V
STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
STB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
STD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics
STP36NF06L STB36NF06L
STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional
STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
Obsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
STP90NF03L STB90NF03L-1
STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
Obsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
STF40NF03L STP40NF03L
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features Type V DSS R DS(on) max I D STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device
STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description
N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
Obsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
Obsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description V DSS
STD2NC45-1 STQ1NC45R-AP
STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NC45-1 450V
Obsolete Product(s) - Obsolete Product(s)
N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D p W STY30NK90Z 900V
N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube
N-channel 950 V - 1.15 Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET Features Type V DSS R DS(on) Max I D Pw STW9NK95Z 950 V < 1.38 Ω 7 A 160 W Extremely high dv/dt capability 100% avalanche
Obsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging
N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET Features Type V DSS R DS(on) max STL100NH3LL 30 V
Obsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
Obsolete Product(s) - Obsolete Product(s)
STD2NK70Z STD2NK70Z-1 N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type V DSS R DS(on) I D Pw STD2NK70Z 700V 7Ω 1.6A 45W STD2NK70Z-1 700V 7Ω 1.6A 45W
STP12NK60Z STF12NK60Z
STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V
STW11NK100Z STW11NK100Z
STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH PowerMOSFET General features V Type DSS R (@Tjmax) DS(on) I D Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W Extremely high dv/dt
Obsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type V DSS R DS(on) R DS(on) *Q g P TOT STK850 30V
STP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.
N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type V DSS R DS(on) I D STP70NS04ZC Clamped < 10mΩ 80A Low capacitance and gate charge 100% avalanche tested 175 C maximum
I D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
Obsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
Obsolete Product(s) - Obsolete Product(s)
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh II Power MOSFET TO-220 - DPAK - D 2 PAK - I 2 PAK - TO-220FP Features Type 100% avalanche tested Low input capacitance
N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
STB11NK50Z - STP11NK50ZFP STP11NK50Z
Features STB11NK50Z - STP11NK50ZFP STP11NK50Z N-channel 500 V, 0.48 Ω, 10 A TO-220, TO-220FP, D 2 PAK Zener-protected SuperMESH TM Power MOSFET Type V DSS R DS(on) max I D Pw STB11NK50Z 500 V < 0.52 Ω
STB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N
STB25NM50N/-1 - STF25NM50N STP25NM50N - STW25NM50N N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I 2 /D 2 PAK - TO-247 Second generation MDmesh Power MOSFET General features Type 100% avalanche tested Low
STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z
STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D 2 PAK Features Type V DSS R DS(on) max I D P W STB20NK50Z
STS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
Obsolete Product(s) - Obsolete Product(s)
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1
STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD16NF06 60V
STD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V
STW43NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode) Features. Application. Description
Nchannel 600 V, 0.075 Ω, 35 A TO247 FDmesh Power MOSFET (with fast diode) Features Type V DSS @ T JMAX R DS(on) max STW43NM60ND 650 V < 0.088 Ω 35 A The worldwide best R DS(on) *area amongst the fast recovery
STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STB80NF10 STP80NF10 100 V 100 V
Obsolete Product(s) - Obsolete Product(s)
Features STx30NM60ND N-channel 600 V, 0.11 Ω, 25 A FDmesh II Power MOSFET (with fast diode) TO-220, TO-220FP, D 2 PAK, I 2 PAK, TO-247 Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND The
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ² PAK/D²PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V
STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET
Table 1: General Features N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Figure 1:Package TYPE V DSS R DS(on) I D -1 60 V 60 V TYPICAL R DS (on) = 0.032 Ω < 0.040 Ω < 0.040 Ω EXCEPTIONAL
STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4
STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
N-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging
Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
STF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET
STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Figure 1:Package STP12PF06 STF12PF06 60 V 60 V TYPICAL R DS (on)
Dual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging
Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
Features. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D 2 /I 2 PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
STGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
STN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description
Nchannel 60 V, 0.07 Ω, 4 A SOT223 STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STN4NF06L 60 V < 0.1 Ω 4 A 2 Exceptional dv/dt capability Avalanche rugged technology 100% avalanche
STP5NK100Z, STF5NK100Z STW5NK100Z
STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type V DSS (@T JMAX ) R DS(on) max STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z
N-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4
STR2N2VH5, STT5N2VH5 Nchannel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in SOT23 and SOT236L packages Features Datasheet preliminary data Order codes V DS R DS(on) max I D P TOT 4 3 STR2N2VH5 0.03
-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
STGD5NB120SZ. 5 A V - low drop internally clamped IGBT. Features. Applications. Description
5 A - 1200 V - low drop internally clamped IGBT Features Low on-voltage drop (V CE(sat) ) High current capability Off losses include tail current High voltage clamping Applications 1 DPAK 3 IPAK 3 2 1
STL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.
Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
STB120N10F4, STP120N10F4
STB120N10F4, STP120N10F4 N-channel 100 V, 8 mω typ., 120 A, STripFET DeepGATE Power MOSFETs in D 2 PAK and TO-220 packages Features Datasheet production data TAB TAB Order codes V DS R DS(on) max. I D
STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP36NF06 STP36NF06FP 60 V 60 V TYPICAL R DS (on) = 0.032 Ω
Obsolete Product(s) - Obsolete Product(s)
STD70N02L STD70N02L-1 N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type V DSS R DS(on) I D STD70N02L 25V
N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S
STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet production data Features TAB Type V DSS R DS(on)
STGB14NC60K STGD14NC60K
STGB14NC60K STGD14NC60K N-channel 14A - 600V -DPAK - D 2 PAK Short circuit rated PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C Low on-voltage drop (Vcesat) Low C res / C ies ratio (
STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
STB55NF06, STP55NF06, STP55NF06FP
N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet production data Features Order code V DSS R DS(on) max. I D STB55NF06 STP55NF06 60 V < 0.018 Ω 50
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
Obsolete Product(s) - Obsolete Product(s)
STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D 2 PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type V CES V CE(sat) Typ @25 C Lower on voltage drop (V cesat ) Lower C RES
STGB30NC60K STGP30NC60K 30 A V - short circuit rugged IGBT Features Applications Description
STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
Contents STL13NM60N Contents 1 Electrical ratings Electrical characteristics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
Part Number Marking Package Packing. STC03DE220HV C03DE220HV TO247-4L HV Tube. November 2006 Rev 1 1/8
Hybrid emitter switched bipolar transistor ESBT 2200V - 3A - 0.33 W Preliminary Data General features Table 1. General features V CS(ON) I C R CS(ON) 1V 3A 0.33Ω Low equivalent on resistance Very fast-switch,
Obsolete Product(s) - Obsolete Product(s)
STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STP60NE06-16 60 V < 0.016
STI260N6F6 STP260N6F6
STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
STF20NK50Z, STP20NK50Z
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V
STP60NH2LL. N-channel 24V Ω - 40A TO-220 STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 24V - 0.010Ω - 40A TO-220 STripFET Power MOSFET General features Type R DS(ON) * Qg industry s benchmark Conduction losses reduced Switching losses reduced Low threshold device Description The
N-channel 40 V, 0.03 Ω typ., 30 A, STripFET II Power MOSFET in a DPAK package. Order code Marking Package Packaging
STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
STC04IE170HV. Emitter switched bipolar transistor ESBT 1700V - 4A W. General features. Internal schematic diagrams. Description.
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features V CS(ON) I C R CS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration Low equivalent
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
Obsolete Product(s) - Obsolete Product(s)
High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General
Obsolete Product(s) - Obsolete Product(s)
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
STGW30NC60KD. 30 A V - short circuit rugged IGBT. Features. Applications. Description
30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND