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2 N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type V CES V CE(sat) C I C STGW30NC60WD 600V < 2.5V 30A High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix W identifies a family optimized for very high frequency application. Internal schematic diagram Applicatio High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies Order codes Sales Type Marking Package Packaging STGW30NC60WD GW30NC60WD TO-247 Tube March 2006 Rev 3 1/

3 Contents: STGW30NC60WD Contents: 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Revision history /14

4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V GS = 0) 600 V I C Collector Current (continuous) at 25 C 60 A I C Collector Current (continuous) at 100 C 30 A I CM (1) Collector Current (pulsed) 200 A V GE Gate-Emitter Voltage ± 20 V P TOT Total Dissipation at T C = 25 C 200 W T stg T j T L Storage Temperature Operating Junction Temperature Maximum Lead Temperature for Soldering Purpose (1.6mm from case, for 10 sec.) 55 to 150 C 300 C 1. Pulse width limited by max junction temperature Table 2. Thermal resistance Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 C/W 3/14

5 Electrical characteristics STGW30NC60WD 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 3. Static Symbol Parameter Test Condictio Min. Typ. Max. Unit V BR(CES) Collectro-Emitter Breakdown Voltage I C = 1mA, V GE = V V CE(SAT) Collector-Emitter Saturation Voltage V GE =15V, I C = 20A, Tj= 25 C V GE =15V, I C = 20A,Tj= 125 C V V V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V I CES Collector-Emitter Leakage Current (V CE = 0) V CE = Max Rating,Tc=25 C V CE = Max Rating, Tc=125 C 10 1 µa ma I GES Gate-Emitter Leakage Current (V CE = 0) V GE = ±20V, V CE = 0 ± 100 na g fs Forward Traconductance V CE = 15V, I C = 20A 15 S Table 4. Dynamic Symbol Parameter Test Condictio Min. Typ. Max. Unit C ies C oes C res Input Capacitance Output Capacitance Reverse Trafer Capacitance V CE = 25V, f = 1MHz, V GE = pf pf pf Q g Total Gate Charge V CE = 390V, I C = 20A, nc Q ge Gate-Emitter Charge V GE = 15V, 17.5 nc Q gc Gate-Collector Charge (see Figure 16) 47 nc I CL Turn-Off SOA Minimum Current V clamp = 480V, Tj = 150 C R G = 10Ω, V GE = 15V 200 A 4/14

6 Electrical characteristics Table 5. Switching on/off (inductive load) Symbol Parameter Test Condictio Min. Typ. Max. Unit t d(on) t r Turn-on Delay Time Current Rise Time V CC = 390V, I C = 20A R G = 10Ω, V GE = 15V, (di/dt) on Turn-on Current Slope T J = 25 C (see Figure 16) 1640 A/µs t d(on) t r Turn-on Delay Time Current Rise Time V CC = 390V, I C = 20A R G = 10Ω, V GE = 15V, (di/dt) on Turn-on Current Slope T J = 125 C (see Figure 16) 1600 A/µs t r (V off ) t d ( off ) t f Off Voltage Rise Time Turn-off Delay Time Current Fall Time V cc = 390V, I C = 20A, R GE = 10Ω, V GE =15V,T J =25 C (see Figure 18) t r (V off ) t d ( off ) t f Off Voltage Rise Time Turn-off Delay Time Current Fall Time V cc = 390V, I C = 20A, R GE =10Ω, V GE =15V, T J =125 C (see Figure 18) Table 6. Switching energy (inductive load) Symbol Parameter Test Condictio Min. Typ. Max. Unit E on (1) Turn-on Switching Losses V CC = 390V, I C = 20A 116 µj E (2) off E ts Turn-off Switching Losses Total Switching Losses R G =10Ω, V GE = 15V, Tj= 25 C (see Figure 18) µj µj E on (1) Turn-on Switching Losses V CC = 390V, I C = 20A 239 µj E (2) off E ts Turn-off Switching Losses Total Switching Losses R G =10Ω, V GE = 15V, Tj= 125 C (see Figure 18) µj µj 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C) 2. Turn-off losses include also the tail of the collector current 5/14

7 Electrical characteristics STGW30NC60WD Table 7. Collector-emitter diode Symbol Parameter Test Conditio Min. Typ. Max. Unit V f Forward On-Voltage If = 10A If = 10A, Tj = 125 C V V t rr Q rr I rrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode If = 20A, V R = 50V, di/dt=100a/µs, T j =25 C (see Figure 19) nc A t rr Q rr I rrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode If = 20A, V R = 50V, di/dt=100a/µs, T j =125 C (see Figure 19) nc A 6/14

8 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characterisics Figure 2. Trafer characteristics Figure 3. Traconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variatio 7/14

9 Electrical characteristics STGW30NC60WD Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 8/14

10 Electrical characteristics Figure 13. Thermal impedance Figure 14. Turn-off SOA Figure 15. Emitter-collector diode characteristics 9/14

11 Test circuit STGW30NC60WD 3 Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14

12 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specificatio are available at: 11/14

13 Package mechanical data STGW30NC60WD TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A b b b c D E e L L L øp ør S /14

14 Revision history 5 Revision history Table 8. Revision history Date Revision Changes 21-Nov Initial release. 29-Nov Modified Figure 4 and Figure 5 06-Mar New template 13/14

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