STGE50NC60VD. 50 A V very fast IGBT. Features. Applications. Description
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1 50 A 600 V very fast IGBT Features High current capability High frequency operation Low C RES /C IES ratio (no crossconduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix V identifies a family optimized for high frequency. Figure 1. ISOTOP Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging GE50NC60VD ISOTOP Tube April 2009 Doc ID Rev 3 1/
2 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /14 Doc ID Rev 3
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = 0) 600 V (1) I C Collector current (continuous) at T C = 25 C 90 A (1) I C Collector current (continuous) at T C = 100 C 50 A I (2) CL Turnoff latching current 200 A (3) I CP Pulsed collector current 200 A V GE Gateemitter voltage ± 20 V I F Diode RMS forward current at T C =25 C 30 A Surge non repetitive forward current t I p = 10 ms FSM 120 A sinusoidal P TOT Total dissipation at T C = 25 C 260 W Tj Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula T I C ( T C ) jmax ( ) T = C R thj c V CE( sat) ( max) T jmax 2. V clamp = 80% of V CES, T j =150 C, R G =10 Ω, V GE =15 V 3. Pulse width limited by max. junction temperature allowed ( ( ), I C ( T C )) Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase IGBT 0.48 C/W R thjcase Thermal resistance junctioncase diode 1.6 C/W R thjamb Thermal resistance junctionamb 30 C/W Doc ID Rev 3 3/14
4 Electrical characteristics 2 Electrical characteristics (T J = 25 C unless otherwise specified) Table 4. Static Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V CE(sat) Collectoremitter saturation voltage V GE = 15 V, I C = 40 A V GE = 15 V, I C =40 A, T j =125 C V V V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V I CES Collector cutoff current (V GE = 0) V CE =600 V V CE = 600 V, T j = 125 C µa ma I GES Gateemitter leakage current (V CE = 0) V GE = ±20 V ±100 na g fs (1) Forward traconductance V CE = 15 V, I C = 20 A 20 S 1. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Table 5. Dynamic Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = pf pf pf Q g Q ge Q gc Total gate charge Gateemitter charge Gatecollector charge V CE = 390 V, I C = 40 A, V GE = 15 V, see Figure nc nc nc 4/14 Doc ID Rev 3
5 Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, see Figure A/µs t d(on) t r (di/dt) on Turnon delay time Current rise time Turnon current slope V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, T j = 125 C see Figure A/µs t r(voff) t d(voff) t f Off voltage rise time Turnoff delay time Current fall time V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, see Figure t r(voff) t d(voff) t f Off voltage rise time Turnoff delay time Current fall time V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, T j = 125 C see Figure Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit E (1) on (2) E off E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, see Figure µj µj µj (1) E on E (2) off E ts Turnon switching losses Turnoff switching losses Total switching losses V CC = 390 V, I C = 40 A R G = 3.3 Ω, V GE = 15 V, T j = 125 C see Figure µj µj µj 1. Eon is the turnon losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a copak diode, the copack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C) 2. Turnoff losses include also the tail of the collector current Doc ID Rev 3 5/14
6 Electrical characteristics Table 8. Collectoremitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward onvoltage I F = 20 A I F = 20 A, Tj = 125 C V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 40 V, di/dt = 100 A/µs see Figure nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 40 V, T j =125 C, di/dt = 100 A/µs see Figure nc A 6/14 Doc ID Rev 3
7 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics Figure 4. Traconductance Figure 5. Collectoremitter on voltage vs temperature Figure 6. Collectoremitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature Doc ID Rev 3 7/14
8 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9. Gate charge vs gateemitter voltage Figure 10. Capacitance variatio Figure 11. Total switching losses vs temperature Figure 12. Total switching losses vs gate charge resistance Figure 13. Total switching losses vs collector current 8/14 Doc ID Rev 3
9 Electrical characteristics Figure 14. Turnoff SOA Figure 15. Emittercollector diode characteristics IFM (A) AM03697v VFM(V) Doc ID Rev 3 9/14
10 Test circuits 3 Test circuits Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit AM01504v1 AM01505v1 Figure 18. Switching waveform Figure 19. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF di/dt AM01506v1 AM01507v1 10/14 Doc ID Rev 3
11 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specificatio, grade definitio and product status are available at: ECOPACK is an ST trademark. Doc ID Rev 3 11/14
12 Package mechanical data Table 9. ISOTOP mechanical data Dim. mm Min. Typ. Max. A A B C C D D E E E G G G F F φp P S Figure 20. ISOTOP drawing _Rev_G 12/14 Doc ID Rev 3
13 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 11Oct First release 24Jul Internal schematic diagram has been updated Figure 1 23Apr Updated: mechanical data Doc ID Rev 3 13/14
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, correctio, modificatio or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditio of sale. Purchasers are solely respoible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No licee, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a licee grant by ST for the use of such third party products or services, or any intellectual property contained therein or coidered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisio different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of America 14/14 Doc ID Rev 3
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